JPS5940779A - インタ−ライン転送ｃｃｄの駆動装置 - Google Patents

インタ−ライン転送ｃｃｄの駆動装置

Info

Publication number
JPS5940779A
JPS5940779A JP57150122A JP15012282A JPS5940779A JP S5940779 A JPS5940779 A JP S5940779A JP 57150122 A JP57150122 A JP 57150122A JP 15012282 A JP15012282 A JP 15012282A JP S5940779 A JPS5940779 A JP S5940779A
Authority
JP
Japan
Prior art keywords
transfer
gate
vertical transfer
voltage
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57150122A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0374554B2 (enrdf_load_stackoverflow
Inventor
Atsushi Kawahara
河原　厚
Norihiko Takatsu
紀彦 高津
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Nippon Kogaku KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp, Nippon Kogaku KK filed Critical Nikon Corp
Priority to JP57150122A priority Critical patent/JPS5940779A/ja
Publication of JPS5940779A publication Critical patent/JPS5940779A/ja
Priority to US06/884,865 priority patent/US4696021A/en
Publication of JPH0374554B2 publication Critical patent/JPH0374554B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP57150122A 1982-06-03 1982-08-31 インタ−ライン転送ｃｃｄの駆動装置 Granted JPS5940779A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP57150122A JPS5940779A (ja) 1982-08-31 1982-08-31 インタ−ライン転送ｃｃｄの駆動装置
US06/884,865 US4696021A (en) 1982-06-03 1986-07-16 Solid-state area imaging device having interline transfer CCD means

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57150122A JPS5940779A (ja) 1982-08-31 1982-08-31 インタ−ライン転送ｃｃｄの駆動装置

Publications (2)

Publication Number Publication Date
JPS5940779A true JPS5940779A (ja) 1984-03-06
JPH0374554B2 JPH0374554B2 (enrdf_load_stackoverflow) 1991-11-27

Family

ID=15489958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57150122A Granted JPS5940779A (ja) 1982-06-03 1982-08-31 インタ−ライン転送ｃｃｄの駆動装置

Country Status (1)

Country Link
JP (1) JPS5940779A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60249480A (ja) * 1984-05-25 1985-12-10 Olympus Optical Co Ltd 固体撮像装置
JPS6225584A (ja) * 1985-07-26 1987-02-03 Asahi Optical Co Ltd インタライン転送方式ｃｃｄイメ−ジセンサ
JPS63136780A (ja) * 1986-11-28 1988-06-08 Fuji Electric Co Ltd Ｃｃｄ固体撮像素子
JPH0247978A (ja) * 1988-08-09 1990-02-16 Minolta Camera Co Ltd 電子シャッター制御装置
JPH02109476A (ja) * 1988-10-18 1990-04-23 Minolta Camera Co Ltd 電子シャッターの駆動方法
JPH03280792A (ja) * 1990-03-29 1991-12-11 Sanyo Electric Co Ltd 固体撮像素子の駆動方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60249480A (ja) * 1984-05-25 1985-12-10 Olympus Optical Co Ltd 固体撮像装置
JPS6225584A (ja) * 1985-07-26 1987-02-03 Asahi Optical Co Ltd インタライン転送方式ｃｃｄイメ−ジセンサ
JPS63136780A (ja) * 1986-11-28 1988-06-08 Fuji Electric Co Ltd Ｃｃｄ固体撮像素子
JPH0247978A (ja) * 1988-08-09 1990-02-16 Minolta Camera Co Ltd 電子シャッター制御装置
JPH02109476A (ja) * 1988-10-18 1990-04-23 Minolta Camera Co Ltd 電子シャッターの駆動方法
JPH03280792A (ja) * 1990-03-29 1991-12-11 Sanyo Electric Co Ltd 固体撮像素子の駆動方法

Also Published As

Publication number Publication date
JPH0374554B2 (enrdf_load_stackoverflow) 1991-11-27

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