JPH0374554B2 - - Google Patents
Info
- Publication number
- JPH0374554B2 JPH0374554B2 JP57150122A JP15012282A JPH0374554B2 JP H0374554 B2 JPH0374554 B2 JP H0374554B2 JP 57150122 A JP57150122 A JP 57150122A JP 15012282 A JP15012282 A JP 15012282A JP H0374554 B2 JPH0374554 B2 JP H0374554B2
- Authority
- JP
- Japan
- Prior art keywords
- transfer
- gate
- ccd
- overflow
- vertical transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001444 catalytic combustion detection Methods 0.000 claims description 59
- 238000005036 potential barrier Methods 0.000 claims description 34
- 238000010586 diagram Methods 0.000 description 10
- 238000005375 photometry Methods 0.000 description 6
- 238000004364 calculation method Methods 0.000 description 5
- 238000007599 discharging Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/04—Shift registers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57150122A JPS5940779A (ja) | 1982-08-31 | 1982-08-31 | インタ−ライン転送ｃｃｄの駆動装置 |
| US06/884,865 US4696021A (en) | 1982-06-03 | 1986-07-16 | Solid-state area imaging device having interline transfer CCD means |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57150122A JPS5940779A (ja) | 1982-08-31 | 1982-08-31 | インタ−ライン転送ｃｃｄの駆動装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5940779A JPS5940779A (ja) | 1984-03-06 |
| JPH0374554B2 true JPH0374554B2 (enrdf_load_stackoverflow) | 1991-11-27 |
Family
ID=15489958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57150122A Granted JPS5940779A (ja) | 1982-06-03 | 1982-08-31 | インタ−ライン転送ｃｃｄの駆動装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5940779A (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07114470B2 (ja) * | 1984-05-25 | 1995-12-06 | オリンパス光学工業株式会社 | 固体撮像装置 |
| JPS6225584A (ja) * | 1985-07-26 | 1987-02-03 | Asahi Optical Co Ltd | インタライン転送方式ｃｃｄイメ−ジセンサ |
| JPS63136780A (ja) * | 1986-11-28 | 1988-06-08 | Fuji Electric Co Ltd | Ｃｃｄ固体撮像素子 |
| JP2754604B2 (ja) * | 1988-10-18 | 1998-05-20 | ミノルタ株式会社 | 電子シャッターの駆動方法 |
| JP2955676B2 (ja) * | 1988-08-09 | 1999-10-04 | ミノルタ株式会社 | 電子シャッター制御装置 |
| JP2620643B2 (ja) * | 1990-03-29 | 1997-06-18 | 三洋電機株式会社 | 固体撮像素子の駆動方法 |
-
1982
- 1982-08-31 JP JP57150122A patent/JPS5940779A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5940779A (ja) | 1984-03-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4696021A (en) | Solid-state area imaging device having interline transfer CCD means | |
| JP3988215B2 (ja) | 撮像装置 | |
| JP3440722B2 (ja) | 固体撮像装置およびその駆動方法並びにカメラ | |
| JP3213529B2 (ja) | 撮像装置 | |
| JPH07114472B2 (ja) | 固体撮像素子の駆動方法 | |
| JPS63110877A (ja) | 電子スチルカメラ | |
| US20070146522A1 (en) | Driving method for solid-state image pickup device and image pickup apparatus | |
| US5719625A (en) | Device for controlling imaging device | |
| US5057926A (en) | Driving method for discharging overflow charges in a solid state imaging device | |
| JP4314693B2 (ja) | 固体撮像素子の駆動方法、固体撮像装置および撮像システム | |
| JP2002320143A (ja) | 撮像装置 | |
| JPH0374554B2 (enrdf_load_stackoverflow) | ||
| US7755691B2 (en) | Driving method for solid-state image pickup device and image pickup apparatus | |
| US4985776A (en) | Method of driving solid-state imaging element | |
| US5140426A (en) | Image pickup device with mechanical shutter for preventing smear | |
| JPS6243275A (ja) | 固体撮像素子駆動装置 | |
| JPH04268764A (ja) | 固体撮像装置 | |
| JPH1013748A (ja) | 固体撮像装置およびその駆動方法、並びに固体撮像装置を用いたカメラ | |
| JPH0446504B2 (enrdf_load_stackoverflow) | ||
| JPH04237271A (ja) | 撮像装置 | |
| JPS58212167A (ja) | インタ−ライントランスフア−電荷結合素子 | |
| JPH09107505A (ja) | 撮像装置 | |
| JPH10136251A (ja) | 撮像装置 | |
| JPH0378034B2 (enrdf_load_stackoverflow) | ||
| JP2693346B2 (ja) | 固体撮像装置とその駆動方法 |