JPS594048A - Fabrication of semiconductor device - Google Patents

Fabrication of semiconductor device

Info

Publication number
JPS594048A
JPS594048A JP57112972A JP11297282A JPS594048A JP S594048 A JPS594048 A JP S594048A JP 57112972 A JP57112972 A JP 57112972A JP 11297282 A JP11297282 A JP 11297282A JP S594048 A JPS594048 A JP S594048A
Authority
JP
Japan
Prior art keywords
film
recess
substrate
layer
element isolation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57112972A
Other languages
Japanese (ja)
Inventor
Masamizu Konaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57112972A priority Critical patent/JPS594048A/en
Publication of JPS594048A publication Critical patent/JPS594048A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

Abstract

PURPOSE:To obtain excellent element isolation characteristic and element characteristic by forming the stripe or grid type element isolation insulating film at the bottom part of recess formed in the predetermined element forming region of semiconductor substrate. CONSTITUTION:An SiO2 film 22 is formed on the surface of an Si substrate 21 and a recess part 24 is also formed with a resist pattern 23 used as the mask. Next, an SiO2 film 25 for element isolation is formed on the surface. Then, stripe or grid type SiO2 film pattern is formed at the bottom of recess part using a resist pattern 26 as the mask. After removing the pattern 26, silicon Si 27 adding impurity in the conductivity type opposing to that of the substrate is formed deeper than the recess 24 on the entire part of substrate. Then, a fluid substance film 28 is applied to the entire part in order to make flat the surface. The layer 27 is buried in flat in the recess 24 by uniformly etching the film 28 and film 27. After removing the exposed film 22, the layer 27 is single-crystallized. At this time, the n-channel MOSFETQn is formed on the layer 27 while the p-channel MOSFETQp on the substrate region adjacent thereto.
JP57112972A 1982-06-30 1982-06-30 Fabrication of semiconductor device Pending JPS594048A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57112972A JPS594048A (en) 1982-06-30 1982-06-30 Fabrication of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57112972A JPS594048A (en) 1982-06-30 1982-06-30 Fabrication of semiconductor device

Publications (1)

Publication Number Publication Date
JPS594048A true JPS594048A (en) 1984-01-10

Family

ID=14600164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57112972A Pending JPS594048A (en) 1982-06-30 1982-06-30 Fabrication of semiconductor device

Country Status (1)

Country Link
JP (1) JPS594048A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS639963A (en) * 1986-06-30 1988-01-16 Nec Corp Complementary mos type semiconductor device
JP2017511610A (en) * 2014-04-13 2017-04-20 日本テキサス・インスツルメンツ株式会社 Isolated semiconductor layers in bulk wafers by localized silicon epitaxial seed formation

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS639963A (en) * 1986-06-30 1988-01-16 Nec Corp Complementary mos type semiconductor device
JP2017511610A (en) * 2014-04-13 2017-04-20 日本テキサス・インスツルメンツ株式会社 Isolated semiconductor layers in bulk wafers by localized silicon epitaxial seed formation
US10516019B2 (en) 2014-04-13 2019-12-24 Texas Instruments Incorporated Isolated semiconductor layer in bulk wafer by localized silicon epitaxial seed formation
JP2019220696A (en) * 2014-04-13 2019-12-26 日本テキサス・インスツルメンツ合同会社 Isolated semiconductor layer in bulk wafer by localized silicon epitaxial seed formation
JP2020061577A (en) * 2014-04-13 2020-04-16 日本テキサス・インスツルメンツ合同会社 Isolated semiconductor layer in bulk wafer by localized silicon epitaxial seed formation

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