JPS639963A - Complementary mos type semiconductor device - Google Patents

Complementary mos type semiconductor device

Info

Publication number
JPS639963A
JPS639963A JP61154363A JP15436386A JPS639963A JP S639963 A JPS639963 A JP S639963A JP 61154363 A JP61154363 A JP 61154363A JP 15436386 A JP15436386 A JP 15436386A JP S639963 A JPS639963 A JP S639963A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
well region
insulator layer
type semiconductor
phenomena
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61154363A
Other languages
Japanese (ja)
Inventor
Yukihiko Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP61154363A priority Critical patent/JPS639963A/en
Publication of JPS639963A publication Critical patent/JPS639963A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Abstract

PURPOSE:To improve the degree of integration in addition to being free from latch up phenomena by introducing an insulator layer to one part of a boundary between a semiconductor substrate and a well region on the same substrate and isolating the insulator layer. CONSTITUTION:A P channel transistor is formed by P<+>OMEGA type source-drain regions 3, 4 shaped to an N-type semiconductor substrate 1 and a gate polysilicon electrode 9, an N channel transistor is formed by N<+> type source- drain regions 5, 6 shaped in a P<-> type well region 2 and a gate polysilicon electrode 9, and the semiconductor substrate and the well region are insulated and isolated by an insulator layer 13 with the exception of a nuclear section 14 for changing polysilicon into a single crystal. Accordingly, a field oxide film by an LOCOS and each channel stopper are unnecessitated, thus allowing fining and the improvement of the degree of integration, then completely preventing latch up phenomena.
JP61154363A 1986-06-30 1986-06-30 Complementary mos type semiconductor device Pending JPS639963A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61154363A JPS639963A (en) 1986-06-30 1986-06-30 Complementary mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61154363A JPS639963A (en) 1986-06-30 1986-06-30 Complementary mos type semiconductor device

Publications (1)

Publication Number Publication Date
JPS639963A true JPS639963A (en) 1988-01-16

Family

ID=15582519

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61154363A Pending JPS639963A (en) 1986-06-30 1986-06-30 Complementary mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS639963A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5835966A (en) * 1981-08-28 1983-03-02 Fujitsu Ltd Complementary metal insulator semiconductor transistor and manufacture thereof
JPS594048A (en) * 1982-06-30 1984-01-10 Toshiba Corp Fabrication of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5835966A (en) * 1981-08-28 1983-03-02 Fujitsu Ltd Complementary metal insulator semiconductor transistor and manufacture thereof
JPS594048A (en) * 1982-06-30 1984-01-10 Toshiba Corp Fabrication of semiconductor device

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