JPS594033A - 圧接型半導体装置 - Google Patents

圧接型半導体装置

Info

Publication number
JPS594033A
JPS594033A JP57112975A JP11297582A JPS594033A JP S594033 A JPS594033 A JP S594033A JP 57112975 A JP57112975 A JP 57112975A JP 11297582 A JP11297582 A JP 11297582A JP S594033 A JPS594033 A JP S594033A
Authority
JP
Japan
Prior art keywords
cathode
substrate
groups
region
periphery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57112975A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0142498B2 (index.php
Inventor
Minoru Azuma
東　実
Katsuhiko Takigami
滝上　克彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57112975A priority Critical patent/JPS594033A/ja
Priority to CS834851A priority patent/CS244676B2/cs
Priority to EP19830303809 priority patent/EP0098175A3/en
Publication of JPS594033A publication Critical patent/JPS594033A/ja
Publication of JPH0142498B2 publication Critical patent/JPH0142498B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W76/138—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/135—Non-interconnected multi-emitter structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors
    • H10W20/484—
    • H10W72/00—
    • H10W72/30—
    • H10W72/073—
    • H10W72/07337—
    • H10W90/756—

Landscapes

  • Thyristors (AREA)
  • Die Bonding (AREA)
JP57112975A 1982-06-30 1982-06-30 圧接型半導体装置 Granted JPS594033A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP57112975A JPS594033A (ja) 1982-06-30 1982-06-30 圧接型半導体装置
CS834851A CS244676B2 (en) 1982-06-30 1983-06-29 Semiconductor element with press contact
EP19830303809 EP0098175A3 (en) 1982-06-30 1983-06-30 Pressure contact type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57112975A JPS594033A (ja) 1982-06-30 1982-06-30 圧接型半導体装置

Publications (2)

Publication Number Publication Date
JPS594033A true JPS594033A (ja) 1984-01-10
JPH0142498B2 JPH0142498B2 (index.php) 1989-09-13

Family

ID=14600244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57112975A Granted JPS594033A (ja) 1982-06-30 1982-06-30 圧接型半導体装置

Country Status (3)

Country Link
EP (1) EP0098175A3 (index.php)
JP (1) JPS594033A (index.php)
CS (1) CS244676B2 (index.php)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03119762A (ja) * 1989-10-02 1991-05-22 Toshiba Corp 電力用圧接型半導体装置
CN118737943A (zh) * 2024-06-28 2024-10-01 北京怀柔实验室 用于晶圆键合的键合夹具及采用其的键合设备和方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60194565A (ja) * 1984-03-15 1985-10-03 Mitsubishi Electric Corp 半導体装置
DE58903790D1 (de) * 1988-08-19 1993-04-22 Asea Brown Boveri Abschaltbares halbleiterbauelement.
JP2739970B2 (ja) * 1988-10-19 1998-04-15 株式会社東芝 圧接型半導体装置
EP0380799B1 (de) * 1989-02-02 1993-10-06 Asea Brown Boveri Ag Druckkontaktiertes Halbleiterbauelement
JP2502386B2 (ja) * 1989-04-11 1996-05-29 富士電機株式会社 半導体装置
DE69312865T2 (de) * 1992-11-09 1998-01-22 Delco Electronics Corp Vertikale PNP Halbleiteranordnung
US7675903B2 (en) 2004-02-06 2010-03-09 Alcatel Lucent Dynamic contact list management system and method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57201077A (en) * 1981-06-05 1982-12-09 Hitachi Ltd Semiconductor switching device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4035831A (en) * 1975-04-17 1977-07-12 Agency Of Industrial Science & Technology Radial emitter pressure contact type semiconductor devices
DE2757821C3 (de) * 1976-12-28 1982-08-19 Tokyo Shibaura Electric Co., Ltd., Kawasaki, Kanagawa Verfahren zur Herstellung einer Mesa-Halbleiteranordnung mit Druckkontakt
FR2378354A1 (fr) * 1977-01-19 1978-08-18 Alsthom Atlantique Procede de fabrication de semiconducteurs de puissance a contacts presses
DE2902224A1 (de) * 1979-01-20 1980-07-24 Bbc Brown Boveri & Cie Kontaktsystem fuer leistungs-halbleiterbauelemente

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57201077A (en) * 1981-06-05 1982-12-09 Hitachi Ltd Semiconductor switching device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03119762A (ja) * 1989-10-02 1991-05-22 Toshiba Corp 電力用圧接型半導体装置
CN118737943A (zh) * 2024-06-28 2024-10-01 北京怀柔实验室 用于晶圆键合的键合夹具及采用其的键合设备和方法
CN118737943B (zh) * 2024-06-28 2025-05-27 北京怀柔实验室 用于晶圆键合的键合夹具及采用其的键合设备和方法

Also Published As

Publication number Publication date
JPH0142498B2 (index.php) 1989-09-13
CS244676B2 (en) 1986-08-14
EP0098175A3 (en) 1985-10-23
EP0098175A2 (en) 1984-01-11
CS485183A2 (en) 1985-08-15

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