JPS594028A - 半導体製造装置 - Google Patents

半導体製造装置

Info

Publication number
JPS594028A
JPS594028A JP11313282A JP11313282A JPS594028A JP S594028 A JPS594028 A JP S594028A JP 11313282 A JP11313282 A JP 11313282A JP 11313282 A JP11313282 A JP 11313282A JP S594028 A JPS594028 A JP S594028A
Authority
JP
Japan
Prior art keywords
semiconductor manufacturing
gas
gas outlet
upper electrode
manufacturing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11313282A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0437578B2 (enrdf_load_stackoverflow
Inventor
Kenji Koyama
小山　堅二
Kanetake Takasaki
高崎　金剛
Masao Sugita
杉田　正夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11313282A priority Critical patent/JPS594028A/ja
Publication of JPS594028A publication Critical patent/JPS594028A/ja
Publication of JPH0437578B2 publication Critical patent/JPH0437578B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP11313282A 1982-06-30 1982-06-30 半導体製造装置 Granted JPS594028A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11313282A JPS594028A (ja) 1982-06-30 1982-06-30 半導体製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11313282A JPS594028A (ja) 1982-06-30 1982-06-30 半導体製造装置

Publications (2)

Publication Number Publication Date
JPS594028A true JPS594028A (ja) 1984-01-10
JPH0437578B2 JPH0437578B2 (enrdf_load_stackoverflow) 1992-06-19

Family

ID=14604351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11313282A Granted JPS594028A (ja) 1982-06-30 1982-06-30 半導体製造装置

Country Status (1)

Country Link
JP (1) JPS594028A (enrdf_load_stackoverflow)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046029A (ja) * 1983-08-24 1985-03-12 Hitachi Ltd 半導体製造装置
JPS6164128A (ja) * 1984-09-05 1986-04-02 Toshiba Corp 試料処理装置
US4590042A (en) * 1984-12-24 1986-05-20 Tegal Corporation Plasma reactor having slotted manifold
JPS61174721A (ja) * 1985-01-30 1986-08-06 Toshiba Corp 平行平板形ドライエツチング装置
JPS62109317A (ja) * 1985-11-08 1987-05-20 Anelva Corp プラズマエツチング装置
US5006220A (en) * 1987-10-26 1991-04-09 Tokyo Ohka Kogyo Co., Ltd. Electrode for use in the treatment of an object in a plasma
US5010842A (en) * 1988-10-25 1991-04-30 Mitsubishi Denki Kabushiki Kaisha Apparatus for forming thin film
US5091217A (en) * 1989-05-22 1992-02-25 Advanced Semiconductor Materials, Inc. Method for processing wafers in a multi station common chamber reactor
JPH07278851A (ja) * 1994-09-19 1995-10-24 Tokai Carbon Co Ltd プラズマエッチング用電極板とその製造方法
USRE36623E (en) * 1986-12-19 2000-03-21 Applied Materials, Inc. Process for PECVD of silicon oxide using TEOS decomposition
US6167834B1 (en) 1986-12-19 2001-01-02 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
KR100489156B1 (ko) * 1994-01-13 2005-05-17 세이코 엡슨 가부시키가이샤 반도체 장치의 제조 장치

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5468169A (en) * 1977-11-11 1979-06-01 Hitachi Ltd Plasma processor of capacitor type

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5468169A (en) * 1977-11-11 1979-06-01 Hitachi Ltd Plasma processor of capacitor type

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046029A (ja) * 1983-08-24 1985-03-12 Hitachi Ltd 半導体製造装置
JPS6164128A (ja) * 1984-09-05 1986-04-02 Toshiba Corp 試料処理装置
US4590042A (en) * 1984-12-24 1986-05-20 Tegal Corporation Plasma reactor having slotted manifold
JPS61174721A (ja) * 1985-01-30 1986-08-06 Toshiba Corp 平行平板形ドライエツチング装置
JPS62109317A (ja) * 1985-11-08 1987-05-20 Anelva Corp プラズマエツチング装置
USRE36623E (en) * 1986-12-19 2000-03-21 Applied Materials, Inc. Process for PECVD of silicon oxide using TEOS decomposition
US6167834B1 (en) 1986-12-19 2001-01-02 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US5006220A (en) * 1987-10-26 1991-04-09 Tokyo Ohka Kogyo Co., Ltd. Electrode for use in the treatment of an object in a plasma
US5022979A (en) * 1987-10-26 1991-06-11 Tokyo Ohka Kogyo Co., Ltd. Electrode for use in the treatment of an object in a plasma
US5010842A (en) * 1988-10-25 1991-04-30 Mitsubishi Denki Kabushiki Kaisha Apparatus for forming thin film
US5091217A (en) * 1989-05-22 1992-02-25 Advanced Semiconductor Materials, Inc. Method for processing wafers in a multi station common chamber reactor
KR100489156B1 (ko) * 1994-01-13 2005-05-17 세이코 엡슨 가부시키가이샤 반도체 장치의 제조 장치
JPH07278851A (ja) * 1994-09-19 1995-10-24 Tokai Carbon Co Ltd プラズマエッチング用電極板とその製造方法

Also Published As

Publication number Publication date
JPH0437578B2 (enrdf_load_stackoverflow) 1992-06-19

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