JPS593962A - 半導体装置の拡散抵抗の製造方法 - Google Patents

半導体装置の拡散抵抗の製造方法

Info

Publication number
JPS593962A
JPS593962A JP57111503A JP11150382A JPS593962A JP S593962 A JPS593962 A JP S593962A JP 57111503 A JP57111503 A JP 57111503A JP 11150382 A JP11150382 A JP 11150382A JP S593962 A JPS593962 A JP S593962A
Authority
JP
Japan
Prior art keywords
film
diffused
oxidation
manufacturing
diffused resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57111503A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0325944B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Goto
広志 後藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57111503A priority Critical patent/JPS593962A/ja
Publication of JPS593962A publication Critical patent/JPS593962A/ja
Publication of JPH0325944B2 publication Critical patent/JPH0325944B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP57111503A 1982-06-30 1982-06-30 半導体装置の拡散抵抗の製造方法 Granted JPS593962A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57111503A JPS593962A (ja) 1982-06-30 1982-06-30 半導体装置の拡散抵抗の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57111503A JPS593962A (ja) 1982-06-30 1982-06-30 半導体装置の拡散抵抗の製造方法

Publications (2)

Publication Number Publication Date
JPS593962A true JPS593962A (ja) 1984-01-10
JPH0325944B2 JPH0325944B2 (enrdf_load_stackoverflow) 1991-04-09

Family

ID=14562943

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57111503A Granted JPS593962A (ja) 1982-06-30 1982-06-30 半導体装置の拡散抵抗の製造方法

Country Status (1)

Country Link
JP (1) JPS593962A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS621259A (ja) * 1985-06-26 1987-01-07 Sharp Corp 半導体抵抗素子の形成方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157240A (en) * 1979-05-25 1980-12-06 Nec Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157240A (en) * 1979-05-25 1980-12-06 Nec Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS621259A (ja) * 1985-06-26 1987-01-07 Sharp Corp 半導体抵抗素子の形成方法

Also Published As

Publication number Publication date
JPH0325944B2 (enrdf_load_stackoverflow) 1991-04-09

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