JPS593923A - 電子ビ−ム露光方法 - Google Patents

電子ビ−ム露光方法

Info

Publication number
JPS593923A
JPS593923A JP57111534A JP11153482A JPS593923A JP S593923 A JPS593923 A JP S593923A JP 57111534 A JP57111534 A JP 57111534A JP 11153482 A JP11153482 A JP 11153482A JP S593923 A JPS593923 A JP S593923A
Authority
JP
Japan
Prior art keywords
patterns
electron beam
pattern
rectangular
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57111534A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0341974B2 (enExample
Inventor
Kenichi Kawashima
川島　憲一
Toshihiko Osada
俊彦 長田
Kenichi Nakagawa
健一 中川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57111534A priority Critical patent/JPS593923A/ja
Priority to DE8383303812T priority patent/DE3379487D1/de
Priority to EP19830303812 priority patent/EP0098177B1/en
Publication of JPS593923A publication Critical patent/JPS593923A/ja
Publication of JPH0341974B2 publication Critical patent/JPH0341974B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31764—Dividing into sub-patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
JP57111534A 1982-06-30 1982-06-30 電子ビ−ム露光方法 Granted JPS593923A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP57111534A JPS593923A (ja) 1982-06-30 1982-06-30 電子ビ−ム露光方法
DE8383303812T DE3379487D1 (en) 1982-06-30 1983-06-30 Scanning electron-beam exposure system
EP19830303812 EP0098177B1 (en) 1982-06-30 1983-06-30 Scanning electron-beam exposure system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57111534A JPS593923A (ja) 1982-06-30 1982-06-30 電子ビ−ム露光方法

Publications (2)

Publication Number Publication Date
JPS593923A true JPS593923A (ja) 1984-01-10
JPH0341974B2 JPH0341974B2 (enExample) 1991-06-25

Family

ID=14563780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57111534A Granted JPS593923A (ja) 1982-06-30 1982-06-30 電子ビ−ム露光方法

Country Status (3)

Country Link
EP (1) EP0098177B1 (enExample)
JP (1) JPS593923A (enExample)
DE (1) DE3379487D1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01286310A (ja) * 1988-05-12 1989-11-17 Nec Corp 荷電ビーム露光方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4818885A (en) * 1987-06-30 1989-04-04 International Business Machines Corporation Electron beam writing method and system using large range deflection in combination with a continuously moving table
US4816692A (en) * 1987-07-08 1989-03-28 International Business Machines Corporation Pattern splicing system and method for scanning of electron beam system
DE69030243T2 (de) * 1989-12-21 1997-07-24 Fujitsu Ltd Verfahren und Gerät zur Steuerung von Ladungsträgerstrahlen in einem Belichtungssystem mittels Ladungsträgerstrahlen
US5393987A (en) * 1993-05-28 1995-02-28 Etec Systems, Inc. Dose modulation and pixel deflection for raster scan lithography
US5624774A (en) * 1994-06-16 1997-04-29 Nikon Corporation Method for transferring patterns with charged particle beam

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5679432A (en) * 1979-12-04 1981-06-30 Jeol Ltd Electron beam exposure process

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4099062A (en) * 1976-12-27 1978-07-04 International Business Machines Corporation Electron beam lithography process
JPS5493364A (en) * 1977-12-30 1979-07-24 Fujitsu Ltd Exposure system for electron beam
EP0053225B1 (en) * 1980-11-28 1985-03-13 International Business Machines Corporation Electron beam system and method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5679432A (en) * 1979-12-04 1981-06-30 Jeol Ltd Electron beam exposure process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01286310A (ja) * 1988-05-12 1989-11-17 Nec Corp 荷電ビーム露光方法

Also Published As

Publication number Publication date
JPH0341974B2 (enExample) 1991-06-25
EP0098177A2 (en) 1984-01-11
DE3379487D1 (en) 1989-04-27
EP0098177A3 (en) 1986-06-04
EP0098177B1 (en) 1989-03-22

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