EP0098177A3 - Scanning electron-beam exposure system - Google Patents

Scanning electron-beam exposure system Download PDF

Info

Publication number
EP0098177A3
EP0098177A3 EP83303812A EP83303812A EP0098177A3 EP 0098177 A3 EP0098177 A3 EP 0098177A3 EP 83303812 A EP83303812 A EP 83303812A EP 83303812 A EP83303812 A EP 83303812A EP 0098177 A3 EP0098177 A3 EP 0098177A3
Authority
EP
European Patent Office
Prior art keywords
scanning electron
beam exposure
exposure system
electron
scanning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP83303812A
Other versions
EP0098177B1 (en
EP0098177A2 (en
Inventor
Kenichi Kawashima
Toshihiko Osada
Kenji Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of EP0098177A2 publication Critical patent/EP0098177A2/en
Publication of EP0098177A3 publication Critical patent/EP0098177A3/en
Application granted granted Critical
Publication of EP0098177B1 publication Critical patent/EP0098177B1/en
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31764—Dividing into sub-patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam
EP19830303812 1982-06-30 1983-06-30 Scanning electron-beam exposure system Expired EP0098177B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP111534/82 1982-06-30
JP11153482A JPS593923A (en) 1982-06-30 1982-06-30 Electron beam exposing method

Publications (3)

Publication Number Publication Date
EP0098177A2 EP0098177A2 (en) 1984-01-11
EP0098177A3 true EP0098177A3 (en) 1986-06-04
EP0098177B1 EP0098177B1 (en) 1989-03-22

Family

ID=14563780

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19830303812 Expired EP0098177B1 (en) 1982-06-30 1983-06-30 Scanning electron-beam exposure system

Country Status (3)

Country Link
EP (1) EP0098177B1 (en)
JP (1) JPS593923A (en)
DE (1) DE3379487D1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4818885A (en) * 1987-06-30 1989-04-04 International Business Machines Corporation Electron beam writing method and system using large range deflection in combination with a continuously moving table
US4816692A (en) * 1987-07-08 1989-03-28 International Business Machines Corporation Pattern splicing system and method for scanning of electron beam system
JPH01286310A (en) * 1988-05-12 1989-11-17 Nec Corp Charged beam exposure method
DE69030243T2 (en) * 1989-12-21 1997-07-24 Fujitsu Ltd Method and device for controlling charge carrier beams in an exposure system using charge carrier beams
US5393987A (en) * 1993-05-28 1995-02-28 Etec Systems, Inc. Dose modulation and pixel deflection for raster scan lithography
US5624774A (en) * 1994-06-16 1997-04-29 Nikon Corporation Method for transferring patterns with charged particle beam

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2375665A1 (en) * 1976-12-27 1978-07-21 Ibm ELECTRONIC BEAM LITHOGRAPHY PROCESS
EP0002957A2 (en) * 1977-12-30 1979-07-11 Fujitsu Limited Electron beam exposure apparatus
EP0053225A1 (en) * 1980-11-28 1982-06-09 International Business Machines Corporation Electron beam system and method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5831728B2 (en) * 1979-12-04 1983-07-08 日本電子株式会社 Electron beam exposure method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2375665A1 (en) * 1976-12-27 1978-07-21 Ibm ELECTRONIC BEAM LITHOGRAPHY PROCESS
EP0002957A2 (en) * 1977-12-30 1979-07-11 Fujitsu Limited Electron beam exposure apparatus
EP0053225A1 (en) * 1980-11-28 1982-06-09 International Business Machines Corporation Electron beam system and method

Also Published As

Publication number Publication date
EP0098177B1 (en) 1989-03-22
JPS593923A (en) 1984-01-10
JPH0341974B2 (en) 1991-06-25
DE3379487D1 (en) 1989-04-27
EP0098177A2 (en) 1984-01-11

Similar Documents

Publication Publication Date Title
GB2163318B (en) Half-tone facsimile system
GB2113950B (en) Image composition system
GB2175169B (en) Image processing system
GB2119539B (en) Optical-mechanical scanning system
JPS5789850A (en) Fly point x-ray scanning system
DE3369570D1 (en) Scanning type laser system
DE3377177D1 (en) Electron beam exposure system
GB8320045D0 (en) Range imaging
GB8308260D0 (en) Electron beam apparatus
EP0248588A3 (en) Electron beam exposure system
DE3279011D1 (en) Electron-beam lithographic apparatus
DE3377549D1 (en) Electron beam exposure apparatus
DE3379915D1 (en) X-ray lithographic system
DE3172441D1 (en) Electron beam exposure system
GB2132050B (en) Facsimile system
EP0084459A3 (en) Facsimile system
GB8319949D0 (en) Electron beam lithography
DE3173312D1 (en) Electron beam exposure system
DE3380719D1 (en) Electron beam exposure apparatus
GB8325829D0 (en) Electron beam scanning device
DE3380504D1 (en) Electron beam apparatus
DE3278056D1 (en) Scanning electron beam exposure system
DE3279856D1 (en) Scanning electron beam exposure system
DE3379487D1 (en) Scanning electron-beam exposure system
GB2118361B (en) Scanning electron beam apparatus

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Designated state(s): DE FR GB

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): DE FR GB

17P Request for examination filed

Effective date: 19860624

17Q First examination report despatched

Effective date: 19870810

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE FR GB

REF Corresponds to:

Ref document number: 3379487

Country of ref document: DE

Date of ref document: 19890427

ET Fr: translation filed
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 19960611

Year of fee payment: 14

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 19960621

Year of fee payment: 14

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 19960627

Year of fee payment: 14

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 19970630

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 19970630

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 19980227

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 19980303

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST