JPS5932188A - ビ−ム走査形半導体レ−ザ - Google Patents

ビ−ム走査形半導体レ−ザ

Info

Publication number
JPS5932188A
JPS5932188A JP14180782A JP14180782A JPS5932188A JP S5932188 A JPS5932188 A JP S5932188A JP 14180782 A JP14180782 A JP 14180782A JP 14180782 A JP14180782 A JP 14180782A JP S5932188 A JPS5932188 A JP S5932188A
Authority
JP
Japan
Prior art keywords
junction
electrodes
stepped part
layer
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14180782A
Other languages
English (en)
Japanese (ja)
Other versions
JPH041515B2 (ref
Inventor
Akira Fujimoto
晶 藤本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Tateisi Electronics Co
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tateisi Electronics Co, Omron Tateisi Electronics Co filed Critical Tateisi Electronics Co
Priority to JP14180782A priority Critical patent/JPS5932188A/ja
Priority to US06/505,481 priority patent/US4581743A/en
Priority to GB08321788A priority patent/GB2127218B/en
Priority to DE19833329467 priority patent/DE3329467A1/de
Priority to US06/523,673 priority patent/US4571729A/en
Priority to DE19833348097 priority patent/DE3348097C2/de
Publication of JPS5932188A publication Critical patent/JPS5932188A/ja
Publication of JPH041515B2 publication Critical patent/JPH041515B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP14180782A 1982-06-18 1982-08-16 ビ−ム走査形半導体レ−ザ Granted JPS5932188A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP14180782A JPS5932188A (ja) 1982-08-16 1982-08-16 ビ−ム走査形半導体レ−ザ
US06/505,481 US4581743A (en) 1982-06-18 1983-06-17 Semiconductor laser having an inverted layer in a stepped offset portion
GB08321788A GB2127218B (en) 1982-08-16 1983-08-12 Semiconductor laser
DE19833329467 DE3329467A1 (de) 1982-08-16 1983-08-16 Halbleiterlaser
US06/523,673 US4571729A (en) 1982-06-18 1983-08-16 Semiconductor laser having an inverted layer in a plurality of stepped offset portions
DE19833348097 DE3348097C2 (ref) 1982-08-16 1983-08-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14180782A JPS5932188A (ja) 1982-08-16 1982-08-16 ビ−ム走査形半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS5932188A true JPS5932188A (ja) 1984-02-21
JPH041515B2 JPH041515B2 (ref) 1992-01-13

Family

ID=15300580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14180782A Granted JPS5932188A (ja) 1982-06-18 1982-08-16 ビ−ム走査形半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS5932188A (ref)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54123886A (en) * 1978-03-17 1979-09-26 Nec Corp Semiconductor laser unit for high speed modulation
JPS55115388A (en) * 1979-02-26 1980-09-05 Mitsubishi Electric Corp Manufacture of semiconductor laser device
JPS55132091A (en) * 1979-04-02 1980-10-14 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser array

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54123886A (en) * 1978-03-17 1979-09-26 Nec Corp Semiconductor laser unit for high speed modulation
JPS55115388A (en) * 1979-02-26 1980-09-05 Mitsubishi Electric Corp Manufacture of semiconductor laser device
JPS55132091A (en) * 1979-04-02 1980-10-14 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser array

Also Published As

Publication number Publication date
JPH041515B2 (ref) 1992-01-13

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