JPH041517B2 - - Google Patents
Info
- Publication number
- JPH041517B2 JPH041517B2 JP57233924A JP23392482A JPH041517B2 JP H041517 B2 JPH041517 B2 JP H041517B2 JP 57233924 A JP57233924 A JP 57233924A JP 23392482 A JP23392482 A JP 23392482A JP H041517 B2 JPH041517 B2 JP H041517B2
- Authority
- JP
- Japan
- Prior art keywords
- junctions
- laser
- junction
- light
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2238—Buried stripe structure with a terraced structure
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23392482A JPS59117187A (ja) | 1982-12-23 | 1982-12-23 | 光分岐用半導体レ−ザ |
| GB08321788A GB2127218B (en) | 1982-08-16 | 1983-08-12 | Semiconductor laser |
| DE19833329467 DE3329467A1 (de) | 1982-08-16 | 1983-08-16 | Halbleiterlaser |
| DE19833348097 DE3348097C2 (ref) | 1982-08-16 | 1983-08-16 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23392482A JPS59117187A (ja) | 1982-12-23 | 1982-12-23 | 光分岐用半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59117187A JPS59117187A (ja) | 1984-07-06 |
| JPH041517B2 true JPH041517B2 (ref) | 1992-01-13 |
Family
ID=16962730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23392482A Granted JPS59117187A (ja) | 1982-08-16 | 1982-12-23 | 光分岐用半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59117187A (ref) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55115388A (en) * | 1979-02-26 | 1980-09-05 | Mitsubishi Electric Corp | Manufacture of semiconductor laser device |
| JPS55132091A (en) * | 1979-04-02 | 1980-10-14 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser array |
-
1982
- 1982-12-23 JP JP23392482A patent/JPS59117187A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59117187A (ja) | 1984-07-06 |
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