GB2127218B - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
GB2127218B
GB2127218B GB08321788A GB8321788A GB2127218B GB 2127218 B GB2127218 B GB 2127218B GB 08321788 A GB08321788 A GB 08321788A GB 8321788 A GB8321788 A GB 8321788A GB 2127218 B GB2127218 B GB 2127218B
Authority
GB
United Kingdom
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08321788A
Other versions
GB8321788D0 (en
GB2127218A (en
Inventor
Akira Fujimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP14180782A external-priority patent/JPS5932188A/en
Priority claimed from JP23392482A external-priority patent/JPS59117187A/en
Application filed by Omron Tateisi Electronics Co filed Critical Omron Tateisi Electronics Co
Publication of GB8321788D0 publication Critical patent/GB8321788D0/en
Publication of GB2127218A publication Critical patent/GB2127218A/en
Application granted granted Critical
Publication of GB2127218B publication Critical patent/GB2127218B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
GB08321788A 1982-08-16 1983-08-12 Semiconductor laser Expired GB2127218B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP14180782A JPS5932188A (en) 1982-08-16 1982-08-16 Beam scan type semiconductor laser
JP23392482A JPS59117187A (en) 1982-12-23 1982-12-23 Semiconductor laser for branching beam

Publications (3)

Publication Number Publication Date
GB8321788D0 GB8321788D0 (en) 1983-09-14
GB2127218A GB2127218A (en) 1984-04-04
GB2127218B true GB2127218B (en) 1986-05-21

Family

ID=26473975

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08321788A Expired GB2127218B (en) 1982-08-16 1983-08-12 Semiconductor laser

Country Status (2)

Country Link
DE (2) DE3348097C2 (en)
GB (1) GB2127218B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3821775A1 (en) * 1988-06-28 1990-01-11 Siemens Ag Semiconductor layer structure for a laser diode having a buried heterostructure
DE4107850B4 (en) * 1990-03-10 2006-06-29 Daimlerchrysler Ag Arrangement for improving visibility, especially in vehicles

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1273284A (en) * 1970-10-13 1972-05-03 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
GB1494518A (en) * 1975-02-04 1977-12-07 Standard Telephones Cables Ltd Heterostructure lasers
JPS55165691A (en) 1979-06-13 1980-12-24 Nec Corp Compound semiconductor laser element
US4280108A (en) * 1979-07-12 1981-07-21 Xerox Corporation Transverse junction array laser
JPS575384A (en) * 1980-06-13 1982-01-12 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS5723292A (en) * 1980-07-16 1982-02-06 Sony Corp Semiconductor laser device and manufacture thereof

Also Published As

Publication number Publication date
DE3348097C2 (en) 1989-03-30
DE3348097A1 (en) 1986-10-02
DE3329467C2 (en) 1987-11-26
GB8321788D0 (en) 1983-09-14
GB2127218A (en) 1984-04-04
DE3329467A1 (en) 1984-02-16

Similar Documents

Publication Publication Date Title
GB2115218B (en) Semiconductor laser
GB2131610B (en) Semiconductor laser
GB2115217B (en) Semiconductor lasers
GB2131607B (en) Semiconductor laser device
GB8333927D0 (en) Semi-conductor laser
GB2106706B (en) Semiconductor laser
GB2105101B (en) Semiconductor laser
GB2111743B (en) Semiconductor laser
DE3376936D1 (en) Semiconductor laser
GB2115608B (en) Semi-conductor lasers
DE3377183D1 (en) Semiconductor laser
GB8314965D0 (en) Semiconductor laser
GB2100501B (en) Semiconductor laser
GB2129212B (en) Semiconductor laser devices
GB2089108B (en) Semiconductor laser
GB2128402B (en) Semiconductor laser devices
GB8430811D0 (en) Semiconductor laser
GB2130007B (en) Semiconductor laser
DE3377182D1 (en) Semiconductor laser
GB2080014B (en) Semiconductor lasers
EP0085423A3 (en) Semiconductor laser device
GB2125612B (en) Flowing-gas laser
EP0145203A3 (en) Semiconductor laser
DE3377606D1 (en) Semiconductor laser
EP0133036A3 (en) Semiconductor laser

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19970812