JPS593017A - アモルフアスシリコンカ−バイド膜の製造方法 - Google Patents

アモルフアスシリコンカ−バイド膜の製造方法

Info

Publication number
JPS593017A
JPS593017A JP11266882A JP11266882A JPS593017A JP S593017 A JPS593017 A JP S593017A JP 11266882 A JP11266882 A JP 11266882A JP 11266882 A JP11266882 A JP 11266882A JP S593017 A JPS593017 A JP S593017A
Authority
JP
Japan
Prior art keywords
film
silicon carbide
amorphous silicon
hydrogen
carbide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11266882A
Other languages
English (en)
Japanese (ja)
Other versions
JPS639012B2 (enrdf_load_html_response
Inventor
Takuro Yamashita
山下　卓郎
Hiroshi Taniguchi
浩 谷口
Masaru Yoshida
勝 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP11266882A priority Critical patent/JPS593017A/ja
Publication of JPS593017A publication Critical patent/JPS593017A/ja
Publication of JPS639012B2 publication Critical patent/JPS639012B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
JP11266882A 1982-06-29 1982-06-29 アモルフアスシリコンカ−バイド膜の製造方法 Granted JPS593017A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11266882A JPS593017A (ja) 1982-06-29 1982-06-29 アモルフアスシリコンカ−バイド膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11266882A JPS593017A (ja) 1982-06-29 1982-06-29 アモルフアスシリコンカ−バイド膜の製造方法

Publications (2)

Publication Number Publication Date
JPS593017A true JPS593017A (ja) 1984-01-09
JPS639012B2 JPS639012B2 (enrdf_load_html_response) 1988-02-25

Family

ID=14592488

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11266882A Granted JPS593017A (ja) 1982-06-29 1982-06-29 アモルフアスシリコンカ−バイド膜の製造方法

Country Status (1)

Country Link
JP (1) JPS593017A (enrdf_load_html_response)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61243166A (ja) * 1985-04-18 1986-10-29 Matsushita Electric Ind Co Ltd 硬質膜およびその製造方法
JPS627848A (ja) * 1985-07-04 1987-01-14 Matsushita Electric Ind Co Ltd 耐摩耗膜およびその製造方法
EP0762406A1 (de) * 1995-09-01 1997-03-12 Balzers Aktiengesellschaft Informationsträger, Verfahren zur Schichtherstellung und Anlagen hierfür
US5611955A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corp. High resistivity silicon carbide substrates for high power microwave devices
JP2013503441A (ja) * 2009-08-27 2013-01-31 タイコ・エレクトロニクス・コーポレイション 温度ヒューズ

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61243166A (ja) * 1985-04-18 1986-10-29 Matsushita Electric Ind Co Ltd 硬質膜およびその製造方法
JPS627848A (ja) * 1985-07-04 1987-01-14 Matsushita Electric Ind Co Ltd 耐摩耗膜およびその製造方法
US5611955A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corp. High resistivity silicon carbide substrates for high power microwave devices
EP0762406A1 (de) * 1995-09-01 1997-03-12 Balzers Aktiengesellschaft Informationsträger, Verfahren zur Schichtherstellung und Anlagen hierfür
WO1997009715A1 (de) * 1995-09-01 1997-03-13 Balzers Aktiengesellschaft Informationsträger, verfahren zur schichtherstellung und anlagen hierfür
US5965228A (en) * 1995-09-01 1999-10-12 Balzers Aktiengesellschaft Information carrier, method for producing same
JP2013503441A (ja) * 2009-08-27 2013-01-31 タイコ・エレクトロニクス・コーポレイション 温度ヒューズ

Also Published As

Publication number Publication date
JPS639012B2 (enrdf_load_html_response) 1988-02-25

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