JPS5925396B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS5925396B2 JPS5925396B2 JP49004982A JP498274A JPS5925396B2 JP S5925396 B2 JPS5925396 B2 JP S5925396B2 JP 49004982 A JP49004982 A JP 49004982A JP 498274 A JP498274 A JP 498274A JP S5925396 B2 JPS5925396 B2 JP S5925396B2
- Authority
- JP
- Japan
- Prior art keywords
- gap
- substrate
- protective film
- diffusion
- depth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Led Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP49004982A JPS5925396B2 (ja) | 1974-01-07 | 1974-01-07 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP49004982A JPS5925396B2 (ja) | 1974-01-07 | 1974-01-07 | 半導体装置の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59027048A Division JPS59161019A (ja) | 1984-02-17 | 1984-02-17 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS50102260A JPS50102260A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1975-08-13 |
JPS5925396B2 true JPS5925396B2 (ja) | 1984-06-16 |
Family
ID=11598793
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP49004982A Expired JPS5925396B2 (ja) | 1974-01-07 | 1974-01-07 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5925396B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5721824A (en) * | 1980-07-14 | 1982-02-04 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1974
- 1974-01-07 JP JP49004982A patent/JPS5925396B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS50102260A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1975-08-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4880493A (en) | Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication | |
JP2994525B2 (ja) | 面発光レーザ装置とその製造方法 | |
JPH07263355A (ja) | 半導体装置の製造方法,半導体結晶表面のクリーニング方法,及び半導体装置 | |
JPS6249729B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JPH11126758A (ja) | 半導体素子製造方法 | |
US5092957A (en) | Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching | |
US5401357A (en) | Dry etching method | |
US3900865A (en) | Group III-V compound photoemitters having a high quantum efficiency and long wavelength response | |
JPS5925396B2 (ja) | 半導体装置の製造方法 | |
JPH0376129A (ja) | 窒化ホウ素を用いた電子装置の作製方法 | |
JP2500443B2 (ja) | 化合物半導体のドライエッチング方法 | |
JP2803353B2 (ja) | 半導体結晶成長方法 | |
JPS6355207B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JPS634345B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JPH05206520A (ja) | p型II−VI族化合物半導体の製造方法 | |
JP2671089B2 (ja) | 量子構造作製方法 | |
JPH0361335B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JP2596027B2 (ja) | 化合物半導体結晶成長方法及び結晶成長装置 | |
JP2897107B2 (ja) | 結晶成長方法 | |
JP2933328B2 (ja) | 量子細線ディバイス作製方法および量子細線ディバイス | |
JPH0234922A (ja) | 半導体装置の製造方法 | |
JPH01215019A (ja) | オーミック電極の形成方法 | |
Osgood Jr | An Overview of Laser Chemical Processing | |
JPH06204133A (ja) | 半導体結晶基板及び半導体装置の製法 | |
JPS5814739B2 (ja) | ハンドウタイソウチノセイゾウホウホウ |