JPS5925387B2 - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5925387B2
JPS5925387B2 JP55078158A JP7815880A JPS5925387B2 JP S5925387 B2 JPS5925387 B2 JP S5925387B2 JP 55078158 A JP55078158 A JP 55078158A JP 7815880 A JP7815880 A JP 7815880A JP S5925387 B2 JPS5925387 B2 JP S5925387B2
Authority
JP
Japan
Prior art keywords
bonding pad
oxide film
insulating layer
layer
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55078158A
Other languages
English (en)
Japanese (ja)
Other versions
JPS574144A (en
Inventor
明 黒丸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP55078158A priority Critical patent/JPS5925387B2/ja
Priority to GB8116777A priority patent/GB2078442B/en
Priority to DE19813122740 priority patent/DE3122740A1/de
Publication of JPS574144A publication Critical patent/JPS574144A/ja
Publication of JPS5925387B2 publication Critical patent/JPS5925387B2/ja
Priority to US06/649,955 priority patent/US4539582A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
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    • H01L2224/0554—External layer
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    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4845—Details of ball bonds
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    • H01L2224/48453—Shape of the interface with the bonding area
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
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    • H01L2924/1203—Rectifying Diode
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    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
JP55078158A 1980-06-10 1980-06-10 半導体装置 Expired JPS5925387B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP55078158A JPS5925387B2 (ja) 1980-06-10 1980-06-10 半導体装置
GB8116777A GB2078442B (en) 1980-06-10 1981-06-02 A semiconductor device bonding pad
DE19813122740 DE3122740A1 (de) 1980-06-10 1981-06-09 Halbleiterbauelement
US06/649,955 US4539582A (en) 1980-06-10 1984-09-11 Anti-short bonding pad structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55078158A JPS5925387B2 (ja) 1980-06-10 1980-06-10 半導体装置

Publications (2)

Publication Number Publication Date
JPS574144A JPS574144A (en) 1982-01-09
JPS5925387B2 true JPS5925387B2 (ja) 1984-06-16

Family

ID=13654105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55078158A Expired JPS5925387B2 (ja) 1980-06-10 1980-06-10 半導体装置

Country Status (4)

Country Link
US (1) US4539582A (enExample)
JP (1) JPS5925387B2 (enExample)
DE (1) DE3122740A1 (enExample)
GB (1) GB2078442B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0724276B2 (ja) * 1988-02-05 1995-03-15 三菱電機株式会社 ワイヤボンデイングパッドの組立体
US6555757B2 (en) * 2000-04-10 2003-04-29 Ngk Spark Plug Co., Ltd. Pin solder jointed to a resin substrate, made having a predetermined hardness and dimensions

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1099930A (en) * 1966-05-31 1968-01-17 Fairchild Camera Instr Co Improvements in or relating to semiconductor devices
US3717567A (en) * 1967-05-29 1973-02-20 A Bodine Use of sonic resonat energy in electrical machining
NL159822B (nl) * 1969-01-02 1979-03-15 Philips Nv Halfgeleiderinrichting.
US3721838A (en) * 1970-12-21 1973-03-20 Ibm Repairable semiconductor circuit element and method of manufacture
JPS5028763A (enExample) * 1973-07-13 1975-03-24
DE2348323A1 (de) * 1973-09-26 1975-04-03 Licentia Gmbh Integrierte festkoerperschaltung mit einer vielzahl von bauelementen in einem gemeinsamen halbleiterkoerper
US4188438A (en) * 1975-06-02 1980-02-12 National Semiconductor Corporation Antioxidant coating of copper parts for thermal compression gang bonding of semiconductive devices
JPS5851425B2 (ja) * 1975-08-22 1983-11-16 株式会社日立製作所 ハンドウタイソウチ
JPS583380B2 (ja) * 1977-03-04 1983-01-21 株式会社日立製作所 半導体装置とその製造方法
JPS53123074A (en) * 1977-04-01 1978-10-27 Nec Corp Semiconductor device
JPS5918870B2 (ja) * 1977-05-15 1984-05-01 財団法人半導体研究振興会 半導体集積回路
DE2727319A1 (de) * 1977-06-16 1979-01-04 Nippon Electric Co Halbleiteranordnung mit einer hoeckerfoermigen anschlusselektrode
JPS5459080A (en) * 1977-10-19 1979-05-12 Nec Corp Semiconductor device
NL184549C (nl) * 1978-01-27 1989-08-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting.
JPS54139374A (en) * 1978-04-21 1979-10-29 Toshiba Corp Semiconductor device
US4228447A (en) * 1979-02-12 1980-10-14 Tektronix, Inc. Submicron channel length MOS inverter with depletion-mode load transistor
JPS5745259A (en) * 1980-09-01 1982-03-15 Hitachi Ltd Resin sealing type semiconductor device

Also Published As

Publication number Publication date
DE3122740C2 (enExample) 1988-10-20
GB2078442B (en) 1985-05-30
US4539582A (en) 1985-09-03
JPS574144A (en) 1982-01-09
GB2078442A (en) 1982-01-06
DE3122740A1 (de) 1982-03-18

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