JPS59232116A - Resin-sealed semiconductor device - Google Patents
Resin-sealed semiconductor deviceInfo
- Publication number
- JPS59232116A JPS59232116A JP58107088A JP10708883A JPS59232116A JP S59232116 A JPS59232116 A JP S59232116A JP 58107088 A JP58107088 A JP 58107088A JP 10708883 A JP10708883 A JP 10708883A JP S59232116 A JPS59232116 A JP S59232116A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- epoxy resin
- semiconductor device
- semiconductor element
- sealed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は樹脂封止形半導体装置、とシわけ、エポキシ樹
脂系組成物によって外囲成形された樹脂封止形半導体装
置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a resin-sealed semiconductor device, and more particularly, to a resin-sealed semiconductor device whose outer shell is molded using an epoxy resin composition.
従来例の構成とその問題点
ダイオード、トランジスタ、ＩＣ１ＬＳＩなどの半導体
装置の外囲構体は、エポキシ樹脂系組成２７・ ・・
物による封止成形構造が広く実用されているが、一般的
な電気特性９機械的密着性、耐湿性などの性能のほかに
、樹脂封止成形体の場合、同樹脂中の不純物の存在も問
題になる。とくに、封止用樹脂内に塩素イオン、すトリ
ウムイオン等が存在すると、金属マイグレーションを誘
発し、たとえば半導体素子に用いられているアルミニウ
ム電極やアルミニウム細線（ポンディングワイヤ）を腐
食し、特性劣化、さらには断線を生じる原因にもなる。Conventional configurations and their problems The surrounding structures of semiconductor devices such as diodes, transistors, and IC1LSIs have epoxy resin compositions27... Sealing molded structures with materials are widely used, but general electrical characteristics 9. In addition to performance such as mechanical adhesion and moisture resistance, in the case of resin-sealed molded products, the presence of impurities in the resin is also a problem. In particular, the presence of chlorine ions, thorium ions, etc. in the sealing resin induces metal migration, which corrodes aluminum electrodes and thin aluminum wires (bonding wires) used in semiconductor devices, resulting in characteristic deterioration and Furthermore, it may cause wire breakage.
壕だ、直接的には、それが樹脂を径路とするリーク電流
の増加にもつながる。Directly, this leads to an increase in leakage current that uses the resin as a path.
さらに、エポキシ樹脂系組成物に要求される性能として
、封止用途の面で、保存寿命、硬化条件の適切なことも
重要である。Furthermore, as performance requirements for epoxy resin compositions, appropriate shelf life and appropriate curing conditions are also important in terms of sealing applications.
発明の目的
本発明は、半導体素子の封止用途に適する樹脂組成物を
提供し、これによって、熱衝撃耐性、高温電気特性など
の緒特性で高性能を有する樹脂封止形半導体装置を実現
することを目的とする。Purpose of the Invention The present invention provides a resin composition suitable for encapsulation of semiconductor elements, thereby realizing a resin-encapsulated semiconductor device having high performance in terms of thermal shock resistance, high-temperature electrical properties, and other properties. The purpose is to
発明の構成
３ ・
本発明は、要約するに、ノボラック型エポキシ樹脂、ノ
ボラック型フェノール樹脂、芳香族アミンアダクトおよ
び有機ホヌフィン化合物を配合組成物として含む合成樹
脂により半導体素子をおおった樹脂封止形半導体装置で
あり、これにより、特性安定、高品質の樹脂封止形半導
体装置が得られるとともに、樹脂対土工程でも、配合組
成物の保存、硬化条件の安定、適切化がはかられる。Structure of the Invention 3 - To summarize, the present invention provides a resin-encapsulated semiconductor in which a semiconductor element is covered with a synthetic resin containing a novolac-type epoxy resin, a novolac-type phenol resin, an aromatic amine adduct, and an organic honufin compound as a blended composition. With this device, a resin-encapsulated semiconductor device with stable characteristics and high quality can be obtained, and also in the resin-to-soil process, the storage of the blended composition and the curing conditions can be stabilized and optimized.
実施例の説明 以下に、本発明を実施例により、詳しくのべる。Description of examples The present invention will be described in detail below using examples.
樹脂封止形半導体装置は、図面の概要断面図のように、
半導体素子（チップ）１を、例えば、銅主体のリードフ
レーム２のタブ部に載置して、同半導体素子１の電極部
を金属細線３によってり一ドフレーム２の外部室％１−
ド部に電極接続したのち、これらを外囲樹脂４で封止し
たものである。As shown in the schematic cross-sectional view of the drawing, the resin-sealed semiconductor device is
A semiconductor element (chip) 1 is placed, for example, on a tab part of a lead frame 2 mainly made of copper, and the electrode part of the semiconductor element 1 is connected by a thin metal wire 3 to an external chamber of the lead frame 2.
After electrodes are connected to the lead portions, these are sealed with a surrounding resin 4.
本発明の実施で使用されるエポキシ樹脂主剤は、エポキ
シ当量２１０〜２７０のノボラック型エポキシ樹脂９例
えば、タレゾールノボラック型エポキシ樹脂、ハロゲン
化フェノールノボラック型工ポキン樹脂などが好適であ
る。寸だ、かかるノボラック型エポキシ樹脂に対して、
ビスフェノールＷｘ ボキシ樹脂１グリシジルエーテル
型エポキシ樹脂、グリシジルエヌテル型エポキシ樹脂、
グリシジルアミン型エボギシ樹脂、脂環型エボギシ樹脂
、複素環型エポキシ樹脂などの各種エポキシ樹脂を、３
５重量％以下の配合比率で混合して用いることもできる
。The epoxy resin base used in the practice of the present invention is preferably a novolac type epoxy resin 9 having an epoxy equivalent of 210 to 270, such as Talesol novolak type epoxy resin, halogenated phenol novolac type engineered polypolymer resin, and the like. Compared to such novolac type epoxy resin,
Bisphenol Wx Boxy resin 1 glycidyl ether type epoxy resin, glycidyl ether type epoxy resin,
Various epoxy resins such as glycidylamine type epoxy resin, alicyclic type epoxy resin, and heterocyclic epoxy resin,
They can also be mixed and used at a blending ratio of 5% by weight or less.
硬化剤としては、ノボラック型フェノール樹脂と芳香族
アミンアダクトとの併用、例えば、両者の等量配合物を
前記樹脂主剤に同量組成で用いるのが適する。ノボラッ
ク型フェノール樹脂のみを硬化剤に単独使用すると、金
属のマイグレーションを誘発するが、芳香族アミンアダ
クトとの併用により、それが確実に抑えられる。As the curing agent, it is suitable to use a novolak type phenol resin and an aromatic amine adduct in combination, for example, to use a mixture of both in equal amounts in the resin base material in the same amount. If novolac type phenol resin is used alone as a curing agent, metal migration will be induced, but this can be reliably suppressed by using it in combination with an aromatic amine adduct.
なお、硬化剤として、ノボラック型フェノール樹脂およ
び芳香族アミンアダクトに加えて、酸無水物系硬化剤を
併用することもできるが、その場合には、添付量に応じ
て、樹脂特性が低下することを承知して、許容量を設定
しなければならない。In addition, as a curing agent, an acid anhydride curing agent can be used in addition to the novolac type phenol resin and aromatic amine adduct, but in that case, the resin properties may deteriorate depending on the amount added. We must be aware of this and set the allowable amount.
５ ・°−〕゛
有機ホスフィン化合物は、前述のエポキシ樹脂主剤およ
び硬化剤の配合物に添加すると、この樹脂の硬化促進剤
として作用する。有機ホスフィン化合物としては、例え
ば、フェニルホヌフィン。5 ・°−] When the organic phosphine compound is added to the above-mentioned mixture of the epoxy resin base and curing agent, it acts as a curing accelerator for this resin. Examples of organic phosphine compounds include phenylhonuphine.
オクチルホスフィン々どの第１ホヌフイン化合物を初め
として、メチルジフェニルホスフィン、ブチルフェニル
ホスフィン、ジフェニルホスフィンなどの第２ホスフイ
ン化合物、トリフェニルホスフィン、トリブチルホスフ
ィン、トリシクロへキシニルホスフィンなどの第３ホス
フィン化合物、さらに、第４ホスフィン化合物がある。Starting with primary honuphine compounds such as octylphosphine, secondary phosphine compounds such as methyldiphenylphosphine, butylphenylphosphine, and diphenylphosphine, and tertiary phosphine compounds such as triphenylphosphine, tributylphosphine, and tricyclohexynylphosphine; There are quaternary phosphine compounds.
特性的には、第１ホヌフイン化合物から第４ホスフィン
化合物へと、順次高級に彦るほど良好な結果が得られる
。有機ホスフィン化合物の添加適量は、エポキシ樹脂主
剤および硬化剤の配合物、すなわち、樹脂成分に対して
、０．０５〜０．５重量％の範囲である。Characteristically, the higher the phosphine compound is, the better the results are obtained. The appropriate amount of the organic phosphine compound to be added is in the range of 0.05 to 0.5% by weight based on the blend of the epoxy resin base agent and curing agent, that is, the resin component.
さらに、成形用樹脂には、通常、無機質充填材を混入さ
せるが、本発明実施例も、石英ガラス粉末、結晶性シリ
カ粉末、ガラス繊維、アルミナな６７−・
どが添加使用できる。無機質充填材の添加適量は樹脂成
分に対して、３５〜７０重量％である。々お、本実施例
による芳香族アミンアダクト配合の樹脂成分は、前述の
各種無機充填利とのなじみがよく、通常、同充填剤と併
用されるカップリング剤は使用しなくてもよく、したが
って、このカップリング剤に含まれるハロゲン化物系不
純物の混入も抑えられる。とくに、前記充填剤は、予め
、前記芳香族アミンアダクト硬化剤と十分混合して前記
主剤と混合すると、配合物の均一性がよい。Furthermore, an inorganic filler is usually mixed into the molding resin, but in the embodiments of the present invention, quartz glass powder, crystalline silica powder, glass fiber, alumina, etc. can also be added. The appropriate amount of inorganic filler to be added is 35 to 70% by weight based on the resin component. Furthermore, the resin component containing the aromatic amine adduct according to this example is compatible with the various inorganic fillers described above, and there is no need to use a coupling agent that is normally used in combination with the same filler. Also, contamination by halide impurities contained in this coupling agent can be suppressed. Particularly, if the filler is sufficiently mixed with the aromatic amine adduct curing agent and then mixed with the main ingredient, the uniformity of the blend is good.
前記エポキシ樹脂系組成物は、成型材料として調製する
場合には、例えば、所定の組成比に選んだ原料組成混合
物を、ミキサーなどによって、光合に混合したのち、熱
ロールによる溶融混合処理またはニーダ−などによる混
合処理を加えることにより、成型に適したものが得られ
る。そして、この成型材料は、半導体装置の封止法とし
てはよく知られている各成型法、例えば、低圧トランス
ファ成型法、インジェクション成型法、圧縮成型法、注
型法など、はとんど全ての封止成型技術に７ 、
適用可能である。特殊な封止法として、溶剤型あるいは
非溶剤型の組成物を用いて半導体表面を被覆する封止法
、半導体表面の局部被覆、いわゆる、ジャンクションコ
ーティング法にも適用できる。When preparing the epoxy resin composition as a molding material, for example, a raw material composition mixture selected to have a predetermined composition ratio is mixed in a mixer or the like, and then melt-mixed using heated rolls or kneaded. By adding a mixing process such as, a product suitable for molding can be obtained. This molding material can be used in almost all well-known molding methods for encapsulating semiconductor devices, such as low-pressure transfer molding, injection molding, compression molding, and casting. It is applicable to encapsulation molding technology. As a special sealing method, a sealing method in which a semiconductor surface is coated using a solvent-based or non-solvent-type composition, and a so-called junction coating method, in which a semiconductor surface is locally coated, can also be applied.
このエポキシ樹脂系組成物中の不純物は、とくに、塩素
イオン、すトリウムイオン外どけ、それぞれ、３ ｐｐ
ｍ以下、加水分解性塩素は、０．０５重量％以下の各含
有量如抑えることが望ましい。The impurities in this epoxy resin composition are, in particular, chlorine ions, strium ions, and 3 ppp each.
It is desirable to suppress the content of hydrolyzable chlorine to 0.05% by weight or less.
さて、このエポキシ樹脂系組成物の硬化処理には、加熱
湿変が１４０°Ｃ〜２６０℃のとき、３０分〜０．２５
分（１５秒）で、１００％近くの硬化が進行する。そし
て、この硬化処理のみで、すなわち、その後のキュア工
程なしで、ガラヌ転移湿度１４０〜１８０°Ｃの樹脂硬
化物が得られる。Now, for the curing treatment of this epoxy resin composition, when the heating and humidity temperature is 140°C to 260°C, 30 minutes to 0.25°C.
In minutes (15 seconds), nearly 100% curing progresses. A cured resin product having a galanic transition humidity of 140 to 180° C. can be obtained only by this curing treatment, that is, without a subsequent curing step.
前記エポキシ樹脂硬化物で封止された半導体装置は、熱
衝撃性にすぐれており、例えば、−６５°Ｃ〜＋１５０
℃の温度ザイクル試験で２００回以ｎ
１二の耐久性を有する。また、透湿性の試験法として知
られるプレッシャークツカーテストで、２気圧、１２１
℃の条件下、５００時間以上の耐久性がある。さらに、
８５℃、８５％ＲＨの高温、高湿条件下でのバイアス印
加試験においても、その耐久性は１０００時間以上であ
り、同条件下での金属のマイグレーションも、２０ｏＯ
時間の経過後でも、全く生じなかった。The semiconductor device sealed with the cured epoxy resin has excellent thermal shock resistance, for example, from -65°C to +150°C.
It has a durability of n12 over 200 times in the temperature cycle test at ℃. In addition, the pressure test, which is known as a test method for moisture permeability, was performed at 2 atmospheres and 121
Durable for over 500 hours at ℃. moreover,
Even in a bias application test under high temperature and high humidity conditions of 85°C and 85% RH, its durability was over 1000 hours, and the metal migration under the same conditions was 20oO
Even after the passage of time, it did not occur at all.
寸だ、配合組成物の保存性に関しても、例えば、従来の
イミダゾール類のみ、ノボラック型フェノールのみ、芳
香族アミンアダク１−硬化剤のみの配合物にくらべ、２
〜３倍に延長され、しかも、硬化条件下では確実に硬化
が進行する。Regarding the storage stability of the blended composition, for example, compared to conventional blends containing only imidazoles, only novolac type phenol, and only aromatic amine adduct 1-curing agent,
It is extended by ~3 times, and the curing progresses reliably under the curing conditions.
発明の効果
本発明によれば、樹脂封止型半導体装置の熱衝撃性、透
湿性、温度サイクルならびに高温、高湿条件下のバイア
ス印加試験など、はとんどの試験に対して、高い耐久性
能を有し、半導体装置の高信頼性が保持される。また、
本発明の実施は、製造過程における配合組成物の安定性
もすぐれており、利用率の向」二など、製造コスト面で
の損率が軽減され、経済性にもすぐれている。Effects of the Invention According to the present invention, high durability performance can be achieved for most tests such as thermal shock resistance, moisture permeability, temperature cycling, and bias application tests under high temperature and high humidity conditions for resin-sealed semiconductor devices. Therefore, high reliability of the semiconductor device is maintained. Also,
The implementation of the present invention has excellent stability of the blended composition during the manufacturing process, reduces loss in manufacturing costs, such as improved utilization rate, and is also excellent in economic efficiency.
図は本発明実施例装置の概要断面図である。
１・・・・・・半導体素子（チップ）、２・・・・・・
リードフレーム、３・・・・・・金属細線、４・・・・
・・外囲樹脂。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名１４
１The figure is a schematic sectional view of an apparatus according to an embodiment of the present invention. 1... Semiconductor element (chip), 2...
Lead frame, 3... Fine metal wire, 4...
・Outer resin. Name of agent: Patent attorney Toshio Nakao and 1 other person14
1
Claims (2)
ェノール樹脂、芳香族アミレアダクトおよび有機ホスフ
ィン化合物を配合組成物として含む合成樹脂により半導
体素子をおおった樹脂封止形半導体装置。(1) A resin-sealed semiconductor device in which a semiconductor element is covered with a synthetic resin containing a novolac-type epoxy resin, a novolac-type phenolic resin, an aromatic amyleaduct, and an organic phosphine compound as a blended composition.
１０〜２７０の組成物でなる特許請求の範囲第１項に記
載の樹脂封止形半導体装置。(2) Novolac type epoxy resin has an epoxy equivalent of 2
10. The resin-sealed semiconductor device according to claim 1, comprising a composition of 10 to 270.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58107088A JPS59232116A (en) | 1983-06-15 | 1983-06-15 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58107088A JPS59232116A (en) | 1983-06-15 | 1983-06-15 | Resin-sealed semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59232116A true JPS59232116A (en) | 1984-12-26 |
| JPH0413372B2 JPH0413372B2 (en) | 1992-03-09 |
Family
ID=14450160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58107088A Granted JPS59232116A (en) | 1983-06-15 | 1983-06-15 | Resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59232116A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS501199A (en) * | 1973-05-07 | 1975-01-08 | ||
| JPS5515509A (en) * | 1978-07-19 | 1980-02-02 | Nippon Telegr & Teleph Corp <Ntt> | Cursor controller for document editing process |
| JPS55155019A (en) * | 1979-05-23 | 1980-12-03 | Mitsui Petrochem Ind Ltd | Epoxy resin conposition |
| JPS55155020A (en) * | 1979-05-24 | 1980-12-03 | Mitsui Petrochem Ind Ltd | Epoxy resin composition |
| JPS572329A (en) * | 1980-06-05 | 1982-01-07 | Toshiba Corp | Epoxy resin type composition and semiconductor device of resin sealing type |
-
1983
- 1983-06-15 JP JP58107088A patent/JPS59232116A/en active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS501199A (en) * | 1973-05-07 | 1975-01-08 | ||
| JPS5515509A (en) * | 1978-07-19 | 1980-02-02 | Nippon Telegr & Teleph Corp <Ntt> | Cursor controller for document editing process |
| JPS55155019A (en) * | 1979-05-23 | 1980-12-03 | Mitsui Petrochem Ind Ltd | Epoxy resin conposition |
| JPS55155020A (en) * | 1979-05-24 | 1980-12-03 | Mitsui Petrochem Ind Ltd | Epoxy resin composition |
| JPS572329A (en) * | 1980-06-05 | 1982-01-07 | Toshiba Corp | Epoxy resin type composition and semiconductor device of resin sealing type |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0413372B2 (en) | 1992-03-09 |
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