JPH0656970A - Epoxy resin composition and semiconductor device sealed therewith - Google Patents

Epoxy resin composition and semiconductor device sealed therewith

Info

Publication number
JPH0656970A
JPH0656970A JP23275592A JP23275592A JPH0656970A JP H0656970 A JPH0656970 A JP H0656970A JP 23275592 A JP23275592 A JP 23275592A JP 23275592 A JP23275592 A JP 23275592A JP H0656970 A JPH0656970 A JP H0656970A
Authority
JP
Japan
Prior art keywords
resin composition
epoxy resin
carbon black
inorganic filler
black colorant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23275592A
Other languages
Japanese (ja)
Inventor
Shinji Tsuchiya
愼二 土屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Chemical Corp
Original Assignee
Toshiba Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Chemical Corp filed Critical Toshiba Chemical Corp
Priority to JP23275592A priority Critical patent/JPH0656970A/en
Publication of JPH0656970A publication Critical patent/JPH0656970A/en
Pending legal-status Critical Current

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  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To provide an epoxy resin composition excellent in humidity resistance, corrosion resistance and mark legibility and a semiconductor device sealed therewith. CONSTITUTION:The resin composition essentially consists of an epoxy resin, a novolac resin, a carbon black colorant and an inorganic filler. The carbon black colorant has a particle diameter of 10-90nm, a pH of 10 or below and a halide ion constant of 100ppm or below and is used in an amount of 0.01-1wt.% based on the resin composition. The inorganic filler is used in an amount of 25-90wt.% based on the resin composition. The device is prepared by sealing a semiconductor chip with a cured product of this composition.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、耐湿性、耐腐蝕性、マ
ーク視認性に優れたエポキシ樹脂組成物および半導体封
止装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition excellent in moisture resistance, corrosion resistance and mark visibility and a semiconductor encapsulation device.

【0002】[0002]

【従来の技術】従来、ダイオード、トランジスタ、I
C,LSI,超LSI等の半導体素子を外部雰囲気や機
械的衝撃から保護するため樹脂封止することが行われて
きた。樹脂封止法はセラミック等を用いる気密封止法に
比べて、大量生産に適することから広く行われてきた。
この封止方法は、樹脂自体が湿気を透過したり、樹脂封
止体と半導体素子、素子と外部を電気的に接続する金ワ
イヤ、リードフレーム等の内在物との接触界面を通じて
湿気が素子に到達すると、絶縁性の低下、リーク電流の
増加等の素子機能の低下を引き起こす。さらに従来のエ
ポキシ樹脂成形材料では、その製造上の理由からCl
- 、Na + 等イオン性不純物を含んでいたため、吸湿
した水分とそれらのイオンが反応して、半導体素子の腐
蝕や断線を引き起こすなど、本来保護すべき材料が原因
で半導体素子の低下を招く欠点があった。樹脂が直接半
導体素子に接していること等から、封止樹脂の主成分で
あるエポキシ樹脂の合成法、イオン等の洗浄方法が検討
されているが、微量のイオンの残留は避け難く、樹脂の
吸湿も半導体装置の軽薄短小化の進行とともに、従来よ
りも容易に素子に水分が到達する状況を生み出してい
る。一方、イオン等の残留が多いと耐湿性、耐蝕性に劣
り、マーク視認性が悪くなる欠点があった。
2. Description of the Related Art Conventionally, diodes, transistors, I
Resin encapsulation has been performed to protect semiconductor elements such as C, LSI and VLSI from the external atmosphere and mechanical shock. The resin sealing method has been widely used because it is suitable for mass production as compared with the airtight sealing method using ceramics or the like.
This encapsulation method allows moisture to pass through the resin itself, or moisture can reach the element through the contact interface between the resin encapsulant and the semiconductor element, gold wires that electrically connect the element to the outside, and internal components such as lead frames. When it reaches, it causes deterioration of the element function such as deterioration of insulation and increase of leakage current. Furthermore, in the conventional epoxy resin molding material, due to manufacturing reasons, Cl
- , Since it contains ionic impurities such as Na + , the absorbed moisture reacts with those ions, causing corrosion or disconnection of the semiconductor element, causing deterioration of the semiconductor element due to the material to be originally protected. There was a flaw. Since the resin is in direct contact with the semiconductor element, a method for synthesizing the epoxy resin, which is the main component of the encapsulating resin, and a method for cleaning ions, etc., are being studied, but it is difficult to avoid leaving a small amount of ions. Moisture absorption has also created a situation in which moisture reaches the element more easily than before, as semiconductor devices become lighter, thinner and smaller. On the other hand, if a large amount of ions or the like remains, the moisture resistance and the corrosion resistance are poor, and the mark visibility is poor.

【0003】[0003]

【発明が解決しようとする課題】本発明は、上記の欠点
を解消するためになされたもので、耐湿性、耐蝕性、マ
ーク視認性に優れ、また吸湿の影響や絶縁性の低下がな
く、電極の腐蝕による断線や水分によるリーク電流の発
生もなく、長期信頼性を保証できるエポキシ樹脂組成物
および半導体封止装置を提供しようとするものである。
DISCLOSURE OF THE INVENTION The present invention has been made to solve the above-mentioned drawbacks, and is excellent in moisture resistance, corrosion resistance, and mark visibility, and there is no influence of moisture absorption or deterioration of insulation. It is an object of the present invention to provide an epoxy resin composition and a semiconductor encapsulation device which can guarantee long-term reliability without causing wire breakage due to electrode corrosion or leak current due to moisture.

【0004】[0004]

【課題を解決するための手段】本発明者は、上記の目的
を達成しようと鋭意研究を重ねた結果、特定のカーボン
ブラック着色剤を用いることによって、上記目的が達成
されることを見いだし、本発明を完成したものである。
As a result of intensive studies to achieve the above object, the present inventor has found that the above object can be achieved by using a specific carbon black colorant. The invention has been completed.

【0005】即ち、本発明は、(A)エポキシ樹脂、
(B)ノボラック型フェノール樹脂、(C)カーボンブ
ラック着色剤および(D)無機質充填剤を必須成分と
し、前記(C)のカーボンブラック着色剤が粒径10〜90
nm、 pH10以下、ハロゲンイオン含有量 100ppm 以下で
あり、樹脂組成物に対して 0.01 〜1 重量%の割合で含
有し、また前記(D)の無機質充填剤を樹脂組成物に対
して25〜90重量%の割合で含有してなることを特徴とす
るエポキシ樹脂組成物である。また、このエポキシ樹脂
組成物の硬化物によって、半導体チップが封止されてな
ることを特徴とする半導体封止装置である。
That is, the present invention relates to (A) epoxy resin,
(B) novolac type phenol resin, (C) carbon black colorant and (D) inorganic filler are essential components, and the carbon black colorant of (C) has a particle size of 10 to 90.
nm, pH 10 or less, halogen ion content 100 ppm or less, 0.01 to 1% by weight relative to the resin composition, and the inorganic filler of the above (D) is 25 to 90% relative to the resin composition. The epoxy resin composition is characterized in that it is contained in a weight percentage. A semiconductor encapsulation device is obtained by encapsulating a semiconductor chip with a cured product of this epoxy resin composition.

【0006】以下、本発明を詳細に説明する。The present invention will be described in detail below.

【0007】本発明に用いる(A)エポキシ樹脂は、そ
の分子中にエポキシ基を少なくとも2個有する化合物で
ある限り、分子構造、分子量等に制限されることなく、
一般に使用されているものを広く使用することができ
る。例えば、ビスフェノール型の芳香族系、シクロヘキ
サン誘導体等の脂環族系、さらに次の一般式で示される
エポキシノボラック系等の樹脂が挙げられる。
The (A) epoxy resin used in the present invention is not limited to its molecular structure, molecular weight, etc., as long as it is a compound having at least two epoxy groups in its molecule.
The commonly used ones can be widely used. Examples thereof include bisphenol type aromatic resins, alicyclic resins such as cyclohexane derivatives, and epoxy novolac resins represented by the following general formula.

【0008】[0008]

【化1】 (但し、式中R1 は水素原子、ハロゲン原子又はアルキ
ル基を、R2 は水素原子又はアルキル基を、n は 1以上
の整数を表す) これらのエポキシ樹脂は単独又は混合して使用すること
ができる。
[Chemical 1] (In the formula, R 1 represents a hydrogen atom, a halogen atom or an alkyl group, R 2 represents a hydrogen atom or an alkyl group, and n represents an integer of 1 or more.) These epoxy resins may be used alone or in combination. You can

【0009】本発明に用いる(B)ノボラック型フェノ
ール樹脂としては、フェノール、アルキルフェノール等
のフェノール類とホルムアルデヒドあるいはパラホルム
アルデヒドとを反応させて得られるノボラック型フェノ
ール樹脂およびこれらの変性樹脂、例えばエポキシ化も
しくはブチル化ノボラック型フェノール樹脂等が挙げら
れ、これらは単独又は混合して使用することができる。
ノボラック型フェノール樹脂の配合割合は、前記(A)
のエポキシ樹脂のエポキシ基(a )と(B)のノボラッ
ク型フェノール樹脂のフェノール性水酸基(b )とのモ
ル比[(a )/(b )]が 0.1〜10の範囲内であること
が望ましい。モル比が 0.1未満もしくは10を超えると耐
湿性、成形作業性および硬化物の電気特性が悪くなり、
いずれの場合も好ましくない。
The novolak type phenolic resin (B) used in the present invention is a novolak type phenolic resin obtained by reacting phenols such as phenol and alkylphenol with formaldehyde or paraformaldehyde, and modified resins thereof, such as epoxidized or Butylated novolac type phenolic resin and the like can be used, and these can be used alone or in combination.
The compounding ratio of the novolac type phenol resin is the same as the above (A).
It is desirable that the molar ratio [(a) / (b)] of the epoxy group (a) of the epoxy resin of (1) and the phenolic hydroxyl group (b) of the novolak type phenolic resin of (B) be within the range of 0.1 to 10. . If the molar ratio is less than 0.1 or exceeds 10, the moisture resistance, molding workability and electrical properties of the cured product will deteriorate.
Either case is not preferable.

【0010】本発明に用いる(C)カーボンブラック着
色剤としては、粒径が10〜90nmの範囲で、 pH10以下、
ハロゲンイオン量 100ppm 以下のものを使用する。粒径
が 10nm 未満では、カーボンブラックの製造工程上著し
く収率が悪いためコストアップとなり、また 90nm を超
えるとカーボンブラックの本来の黒色が失われマーク視
認性等に劣り好ましくない。また、 pH10を超えては樹
脂組成物の耐湿性、耐蝕性に劣り、さらにカーボンブラ
ックの樹脂中への分散性が悪くなるため強度の低下を招
き易い。ハロゲンイオンが 100 ppmを超えるとハロゲン
イオンによる半導体素子の腐蝕を招き、耐湿性、耐蝕性
に効果なく好ましくない。カーボンブラックの着色剤の
配合割合は、全体の樹脂組成物に対して 0.01 〜 1重量
%含有することが望ましい。この配合が、 0.01 重量%
未満では、着色効果に乏しく製品の外観が損なわれ、機
械的にも光を遮る効果に乏しく光照射によるLSIの特
性劣化を起こし好ましくない。また 1重量%を超えると
絶縁性が低下し耐湿性、耐蝕性が低下し好ましくない。
The carbon black colorant (C) used in the present invention has a particle size of 10 to 90 nm and a pH of 10 or less,
Use a halogen ion content of 100 ppm or less. If the particle size is less than 10 nm, the cost is increased because the yield is significantly poor in the production process of carbon black, and if it exceeds 90 nm, the original black color of the carbon black is lost and the mark visibility is poor, which is not preferable. If it exceeds pH 10, the resin composition is inferior in moisture resistance and corrosion resistance, and further, the dispersibility of carbon black in the resin is deteriorated, so that the strength is apt to be lowered. When the halogen ion content exceeds 100 ppm, the halogen ion causes corrosion of the semiconductor element, which is not preferable because it has no effect on the moisture resistance and the corrosion resistance. The carbon black colorant is preferably contained in an amount of 0.01 to 1% by weight based on the total resin composition. This formulation contains 0.01% by weight
If it is less than the above range, the coloring effect is poor, the appearance of the product is impaired, the light blocking effect is poor mechanically, and the characteristics of the LSI are deteriorated by light irradiation, which is not preferable. On the other hand, if it exceeds 1% by weight, the insulating property is lowered and the moisture resistance and the corrosion resistance are lowered, which is not preferable.

【0011】本発明に用いる(D)無機質充填剤として
は、一般に使用されているものが広く使用される。これ
らの無機質充填剤としては、例えばシリカ粉末、アルミ
ナ、三酸化アンチモン、タルク、炭酸カルシウム、チタ
ンホワイト、クレー、ベンガラ、ガラス繊維、炭素繊維
等が挙げられ、特にシリカ粉末およびアルミナが好まし
く用いられる。無機質充填剤の配合割合は、全体の樹脂
組成物に対して25〜90重量%含有するように配合するこ
とが好ましい。その割合が25重量%未満では樹脂組成物
の吸湿性が高く、半田浴浸漬後の耐湿性に劣り、また90
重量%を超えると極端に流動性が悪くなり、成形性に劣
り好ましくない。
As the inorganic filler (D) used in the present invention, generally used ones are widely used. Examples of these inorganic fillers include silica powder, alumina, antimony trioxide, talc, calcium carbonate, titanium white, clay, red iron oxide, glass fiber, carbon fiber and the like, and silica powder and alumina are particularly preferably used. The blending ratio of the inorganic filler is preferably 25 to 90% by weight based on the total resin composition. If the proportion is less than 25% by weight, the resin composition has a high hygroscopicity and the moisture resistance after dipping in a solder bath is poor.
When the content is more than 10% by weight, the fluidity becomes extremely poor and the moldability is deteriorated, which is not preferable.

【0012】本発明のエポキシ樹脂組成物は、エポキシ
樹脂、ノボラック型フェノール樹脂、カーボンブラック
着色剤および無機質充填剤を必須成分とするが、本発明
の目的に反しない限度において、また必要に応じて、例
えば天然ワックス類、合成ワックス類、直鎖脂肪酸の金
属塩、酸アミド、エステル類、パラフィン等の離型剤、
三酸化アンチモン等の難燃剤、シランカップリング剤、
種々の硬化促進剤、ゴム系やシリコーン系の低応力付与
剤等を適宜、添加配合することができる。
The epoxy resin composition of the present invention contains an epoxy resin, a novolac type phenolic resin, a carbon black colorant and an inorganic filler as essential components, but to the extent not deviating from the object of the present invention, and if necessary. , For example, natural waxes, synthetic waxes, metal salts of straight chain fatty acids, acid amides, esters, release agents such as paraffin,
Flame retardant such as antimony trioxide, silane coupling agent,
Various curing accelerators, rubber-based or silicone-based low stress imparting agents, and the like can be appropriately added and blended.

【0013】本発明のエポキシ樹脂組成物を成形材料と
して調製する場合の一般的方法は、前述した特定のエポ
キシ樹脂、ノボラック型フェノール樹脂、カーボンブラ
ック着色剤および無機質充填剤、その他の成分を配合
し、ミキサー等によって十分均一に混合した後、さらに
熱ロールによる溶融混合処理またはニーダ等による混合
処理を行い、次いで冷却固化させ適当な大きさに粉砕し
て成形材料とすることができる。こうして得られた成形
材料は、半導体装置をはじめとする電子部品あるいは電
気部品の封止、被覆、絶縁等に適用すれば優れた特性と
信頼性を付与させることができる。また本発明の半導体
封止装置は、上述の成形材料を用いて半導体チップを封
止することにより容易に製造することができる。封止を
行う半導体装置としては、例えば集積回路、大規模集積
回路、トランジスタ、サイリスタ、ダイオード等で特に
限定されるものではない。封止の最も一般的な方法とし
ては、低圧トランスファー成形法があるが、射出成形、
圧縮成形、注形等による封止も可能である。成形材料で
封止後加熱して硬化させ、最終的にはこの硬化物によっ
て封止された半導体封止装置が得られる。加熱による硬
化は、150 ℃以上に加熱して硬化させることが望まし
い。
The general method for preparing the epoxy resin composition of the present invention as a molding material is to compound the above-mentioned specific epoxy resin, novolac type phenol resin, carbon black colorant and inorganic filler, and other components. After sufficiently homogeneously mixing with a mixer or the like, melt-mixing treatment with a hot roll or mixing treatment with a kneader or the like is further performed, followed by cooling and solidifying and pulverizing to an appropriate size to obtain a molding material. When the molding material thus obtained is applied to sealing, coating, insulation, etc. of electronic parts or electric parts such as semiconductor devices, excellent properties and reliability can be imparted. Further, the semiconductor encapsulation device of the present invention can be easily manufactured by encapsulating a semiconductor chip using the molding material described above. The semiconductor device to be sealed is not particularly limited to, for example, an integrated circuit, a large scale integrated circuit, a transistor, a thyristor, a diode and the like. The most common method of sealing is low pressure transfer molding, but injection molding,
Sealing by compression molding or casting is also possible. After sealing with a molding material, it is heated and cured, and finally a semiconductor sealing device sealed with this cured product is obtained. For curing by heating, it is desirable to heat and cure at 150 ° C or higher.

【0014】[0014]

【作用】本発明のエポキシ樹脂組成物および半導体封止
装置は、特定のカーボンブラック着色剤を用いることに
よって、樹脂組成物の耐湿性、耐蝕性、マーク視認性が
向上し、湿気による絶縁性の低下やリーク電流による半
導体素子機能の低下がなくなる。
In the epoxy resin composition and the semiconductor encapsulation device of the present invention, by using a specific carbon black colorant, the moisture resistance, corrosion resistance, and mark visibility of the resin composition are improved, and the insulation property by moisture is improved. There is no deterioration in the semiconductor device function due to deterioration or leakage current.

【0015】[0015]

【実施例】次に本発明を実施例によって説明するが、本
発明はこれらの実施例によって限定されるものではな
い。以下の実施例および比較例「%」とは「重量%」を
意味する。
EXAMPLES Next, the present invention will be described with reference to examples, but the present invention is not limited to these examples. In the following Examples and Comparative Examples, "%" means "% by weight".

【0016】実施例1〜4 表1に示した組成を常温で混合し、さらに90〜95℃で混
練冷却した後、粉砕して成形材料を得た。
Examples 1 to 4 The compositions shown in Table 1 were mixed at room temperature, further kneaded and cooled at 90 to 95 ° C., and then pulverized to obtain a molding material.

【0017】比較例1〜3 表1に示した組成を実施例と同様に常温で混合し、さら
に90〜95℃で混練冷却した後、粉砕して成形材料を得
た。
Comparative Examples 1 to 3 The compositions shown in Table 1 were mixed at room temperature in the same manner as in Examples, further kneaded and cooled at 90 to 95 ° C., and then pulverized to obtain molding materials.

【0018】こうして製造した成形材料をタブレット化
し、これを用いて 170℃に加熱した金型内にトランスフ
ァー注入して3 分間成形し、集積回路を封止し硬化させ
て半導体封止装置を製造した。これらの半導体封止装置
について、諸試験を行ったのでその結果を表2に示した
が、本発明のエポキシ樹脂組成物および半導体封止装置
は、耐湿性等に優れており、本発明の顕著な効果を確認
することができた。
The thus-prepared molding material was made into tablets, and by using the tablets, transfer injection into a mold heated to 170 ° C. and molding for 3 minutes were performed, and the integrated circuit was sealed and cured to manufacture a semiconductor sealing device. . Various tests were conducted on these semiconductor encapsulation devices, and the results are shown in Table 2. The epoxy resin composition and the semiconductor encapsulation device of the present invention are excellent in moisture resistance and the like, and thus the present invention is remarkable. I was able to confirm the effect.

【0019】[0019]

【表1】 *:ハロゲンイオン量は、カーボンブラックと蒸溜水の
混合液を95℃で20時間攪拌し、抽出、濾過した液を原子
吸光光度測定により求めた。
[Table 1] *: The amount of halogen ions was determined by measuring the atomic absorption spectrophotometry of the liquid that was extracted and filtered by stirring a mixed liquid of carbon black and distilled water for 20 hours at 95 ° C.

【0020】[0020]

【表2】 *1 :成形材料を用いて、アルミニウム配線をした集積
回路チップを、通常の42アロイフレールに接着し、170
℃,3 分間トランスファー成形した後、175 ℃,8 時間
の後硬化を行った。こうして得た成形品を127 ℃, 2.5
気圧の飽和水蒸気中でPCTを行い、アルミニウム配線
の腐蝕による断線を不良として評価した。 *2 :成形材料を用いて、アルミニウム配線をした集積
回路チップを、通常の42アロイフレールに接着し、170
℃,3 分間トランスファー成形した後、175 ℃,8 時間
の後硬化を行った。こうして得た成形品を、127 ℃,
2.5気圧の飽和水蒸気中、18Vの印加電圧でバイアスP
CTを行い、アルミニウム配線の腐蝕による断線を不良
として評価した。 *3 :UV硬化マークインクを塗布後、UV硬化を行い
実体顕微鏡でマークの視認性を目視により評価した。表
中 ○印…良好、△印…やや不鮮明、×印…不鮮明。
[Table 2] * 1: Adhesion of an integrated circuit chip with aluminum wiring to a normal 42 alloy flare using a molding material, 170
After transfer molding at ℃ for 3 minutes, post-curing was performed at 175 ℃ for 8 hours. The molded product obtained in this way is heated at 127 ° C, 2.5
PCT was performed in saturated water vapor at atmospheric pressure, and the breakage due to corrosion of the aluminum wiring was evaluated as defective. * 2: Using a molding material, an aluminum wiring integrated circuit chip is bonded to a standard 42 alloy flare to form 170
After transfer molding at ℃ for 3 minutes, post-curing was performed at 175 ℃ for 8 hours. The molded product thus obtained is
Bias P at an applied voltage of 18 V in saturated steam of 2.5 atm
CT was performed, and disconnection due to corrosion of the aluminum wiring was evaluated as defective. * 3: After the UV curing mark ink was applied, UV curing was performed and the visibility of the mark was visually evaluated with a stereoscopic microscope. In the table, ◯: good, Δ: slightly unclear, ×: unclear.

【0021】[0021]

【発明の効果】以上の説明および表2から明らかなよう
に、本発明のエポキシ樹脂組成物および半導体封止装置
は、耐湿性、耐腐蝕性、マーク視認性に優れ、吸湿の影
響がなく、また電極の腐蝕による断線や水分によるリー
ク電流の発生等がなく、しかも長期間にわたって信頼性
を保証することができる。
As is clear from the above description and Table 2, the epoxy resin composition and the semiconductor encapsulating device of the present invention are excellent in moisture resistance, corrosion resistance and mark visibility, and are not affected by moisture absorption. Further, there is no disconnection due to corrosion of the electrodes and no leak current due to moisture, and the reliability can be guaranteed for a long period of time.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H01L 23/31 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI technical display location H01L 23/31

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 (A)エポキシ樹脂、(B)ノボラック
型フェノール樹脂、(C)カーボンブラック着色剤およ
び(D)無機質充填剤を必須成分とし、前記(C)のカ
ーボンブラック着色剤が粒径10〜90nm、 pH10以下、ハ
ロゲンイオン含有量 100ppm 以下であり、樹脂組成物に
対して 0.01 〜1重量%の割合で含有し、また前記
(D)の無機質充填剤を樹脂組成物に対して25〜90重量
%の割合で含有してなることを特徴とするエポキシ樹脂
組成物。
1. An (A) epoxy resin, (B) novolac type phenol resin, (C) carbon black colorant and (D) inorganic filler are essential components, and the (C) carbon black colorant has a particle size. The content is 10 to 90 nm, the pH is 10 or less, the halogen ion content is 100 ppm or less, the content is 0.01 to 1% by weight with respect to the resin composition, and the inorganic filler of the above (D) is 25 with respect to the resin composition. An epoxy resin composition, characterized in that it is contained in a proportion of from 90 to 90% by weight.
【請求項2】 (A)エポキシ樹脂、(B)ノボラック
型フェノール樹脂、(C)カーボンブラック着色剤およ
び(D)無機質充填剤を必須成分とし、前記(C)のカ
ーボンブラック着色剤が粒径10〜90nm、 pH10以下、ハ
ロゲンイオン含有量 100ppm 以下であり、樹脂組成物に
対して 0.01 〜1 重量%の割合で含有し、また前記
(D)の無機質充填剤を樹脂組成物に対して25〜90重量
%の割合で含有したエポキシ樹脂組成物の硬化物によっ
て、半導体チップが封止されてなることを特徴とする半
導体封止装置。
2. The (A) epoxy resin, (B) novolac type phenol resin, (C) carbon black colorant and (D) inorganic filler are essential components, and the (C) carbon black colorant has a particle size. The content is 10 to 90 nm, the pH is 10 or less, the halogen ion content is 100 ppm or less, the content is 0.01 to 1% by weight with respect to the resin composition, and the inorganic filler of the above (D) is 25 with respect to the resin composition. A semiconductor encapsulation device, which is obtained by encapsulating a semiconductor chip with a cured product of an epoxy resin composition that is contained in a proportion of ˜90 wt%.
JP23275592A 1992-08-07 1992-08-07 Epoxy resin composition and semiconductor device sealed therewith Pending JPH0656970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23275592A JPH0656970A (en) 1992-08-07 1992-08-07 Epoxy resin composition and semiconductor device sealed therewith

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23275592A JPH0656970A (en) 1992-08-07 1992-08-07 Epoxy resin composition and semiconductor device sealed therewith

Publications (1)

Publication Number Publication Date
JPH0656970A true JPH0656970A (en) 1994-03-01

Family

ID=16944252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23275592A Pending JPH0656970A (en) 1992-08-07 1992-08-07 Epoxy resin composition and semiconductor device sealed therewith

Country Status (1)

Country Link
JP (1) JPH0656970A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001019833A (en) * 1999-07-06 2001-01-23 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
EP1724315A2 (en) 2005-05-18 2006-11-22 Fuji Photo Film Co., Ltd. Ink composition, inkjet recording method and process for producing lithographic printing plate
JP2007084624A (en) * 2005-09-20 2007-04-05 Kyocera Chemical Corp Preliminarily kneaded composition, semiconductor sealing epoxy resin composition, and semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001019833A (en) * 1999-07-06 2001-01-23 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
EP1724315A2 (en) 2005-05-18 2006-11-22 Fuji Photo Film Co., Ltd. Ink composition, inkjet recording method and process for producing lithographic printing plate
JP2007084624A (en) * 2005-09-20 2007-04-05 Kyocera Chemical Corp Preliminarily kneaded composition, semiconductor sealing epoxy resin composition, and semiconductor device

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