JPH0413372B2 - - Google Patents
Info
- Publication number
- JPH0413372B2 JPH0413372B2 JP10708883A JP10708883A JPH0413372B2 JP H0413372 B2 JPH0413372 B2 JP H0413372B2 JP 10708883 A JP10708883 A JP 10708883A JP 10708883 A JP10708883 A JP 10708883A JP H0413372 B2 JPH0413372 B2 JP H0413372B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- epoxy resin
- organic phosphine
- composition
- curing agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003822 epoxy resin Substances 0.000 claims description 27
- 239000000203 mixture Substances 0.000 claims description 27
- 229920000647 polyepoxide Polymers 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000003795 chemical substances by application Substances 0.000 claims description 13
- 229920003986 novolac Polymers 0.000 claims description 10
- 150000004982 aromatic amines Chemical class 0.000 claims description 8
- -1 phosphine compound Chemical class 0.000 claims description 8
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Natural products P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 6
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 6
- 239000002075 main ingredient Substances 0.000 claims description 3
- 239000011342 resin composition Substances 0.000 claims description 3
- 239000010680 novolac-type phenolic resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 description 14
- 239000011347 resin Substances 0.000 description 14
- 150000003003 phosphines Chemical class 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 238000007789 sealing Methods 0.000 description 5
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229920001568 phenolic resin Polymers 0.000 description 4
- 239000005011 phenolic resin Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000009472 formulation Methods 0.000 description 3
- 239000011256 inorganic filler Substances 0.000 description 3
- 229910003475 inorganic filler Inorganic materials 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012778 molding material Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910001415 sodium ion Inorganic materials 0.000 description 2
- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- PVWYTIFUYYJMQO-UHFFFAOYSA-N butyl(phenyl)phosphane Chemical compound CCCCPC1=CC=CC=C1 PVWYTIFUYYJMQO-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- GPAYUJZHTULNBE-UHFFFAOYSA-N diphenylphosphine Chemical compound C=1C=CC=CC=1PC1=CC=CC=C1 GPAYUJZHTULNBE-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 239000004845 glycidylamine epoxy resin Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- UJNZOIKQAUQOCN-UHFFFAOYSA-N methyl(diphenyl)phosphane Chemical compound C=1C=CC=CC=1P(C)C1=CC=CC=C1 UJNZOIKQAUQOCN-UHFFFAOYSA-N 0.000 description 1
- SWMBQMGPRYJSCI-UHFFFAOYSA-N octylphosphane Chemical compound CCCCCCCCP SWMBQMGPRYJSCI-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- RPGWZZNNEUHDAQ-UHFFFAOYSA-N phenylphosphine Chemical compound PC1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は樹脂封止形半導体装置、とりわけ、エ
ポキシ樹脂系組成物によつて外囲成形された樹脂
封止形半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a resin-encapsulated semiconductor device, and particularly to a resin-encapsulated semiconductor device whose outer shell is molded with an epoxy resin composition.
従来例の構成とその問題点
ダイオード、トランジスタ、IC、LSIなどの半
導体装置の外囲構体は、エポキシ樹脂系組成物に
よる封止成形構造が広く実用それているが、一般
的な電気特性、機械的密着性、耐湿性などの性能
のほかに、樹脂封止成形体の場合、同樹脂中の不
純物の存在も問題になる。とくに、封止用樹脂内
に塩素イオン、ナトリウムイオン等が存在する
と、金属マイグレーシヨンを誘発し、たとえば半
導体素子に用いられているアルミニウム電極やア
ルミニウム細線（ボンデイングワイヤ）を腐食
し、特性劣化、さらには断線を生じる原因にもな
る。また、直接的には、それが樹脂を経路とする
リーク電流の増加にもつながる。Conventional Structures and Their Problems For the outer structures of semiconductor devices such as diodes, transistors, ICs, and LSIs, encapsulation molding structures using epoxy resin compositions are widely used in practical use. In addition to performance such as physical adhesion and moisture resistance, in the case of resin-sealed molded products, the presence of impurities in the resin is also a problem. In particular, the presence of chlorine ions, sodium ions, etc. in the sealing resin induces metal migration, which corrodes aluminum electrodes and fine aluminum wires (bonding wires) used in semiconductor devices, causing property deterioration and further can also cause wire breakage. Moreover, this directly leads to an increase in leakage current that uses the resin as a path.
さらに、エポキシ樹脂系組成物に要求される性
能として、封止用途の面で、保存寿命、硬化条件
の適切なことも重要である。 Furthermore, as performance requirements for epoxy resin compositions, appropriate shelf life and appropriate curing conditions are also important in terms of sealing applications.
発明の目的
本発明は、半導体素子の封止用途に適する樹脂
組成物を提供し、これによつて、熱衝撃耐性、高
温電気特性などの諸特性で高性能を有する樹脂封
止形半導体装置を実現することを目的とする。OBJECTS OF THE INVENTION The present invention provides a resin composition suitable for use in encapsulating semiconductor elements, thereby producing resin-encapsulated semiconductor devices having high performance in various properties such as thermal shock resistance and high-temperature electrical properties. The aim is to realize this.
発明の構成
本発明は、要約するに、ノボラツク型エポキシ
樹脂を主剤とし、ノボラツク型のフエノール樹脂
と芳香族アミンアダクトとの等量配合物を硬化剤
とし、前記主剤と前記硬化剤とを同重量割合で混
合した組成物中に、第４級有機ホスフイン化合物
を0.05〜0.5重量％の範囲で添加した樹脂組成物
により封止された樹脂封止形半導体装置であり、
これにより、特性安定、高品質の樹脂封止形半導
体装置が得られるとともに、樹脂封止工程でも、
配合組成物の保存、硬化条件の安定、適切化がは
かられる。Composition of the Invention To summarize, the present invention uses a novolac type epoxy resin as a main ingredient, a curing agent is a mixture of equal amounts of a novolac type phenolic resin and an aromatic amine adduct, and the main ingredient and the curing agent are used in equal weights. A resin-sealed semiconductor device encapsulated with a resin composition in which a quaternary organic phosphine compound is added in a range of 0.05 to 0.5% by weight into a composition mixed in a proportion,
As a result, a resin-sealed semiconductor device with stable characteristics and high quality can be obtained, and even in the resin encapsulation process,
The storage of the blended composition and the stabilization and optimization of curing conditions are achieved.
実施例の説明
以下に、本発明を実施例により、詳しくのべ
る。樹脂封止形半導体装置は、図面の概要断面図
のように、半導体素子（チツプ）１を、銅主体の
リードフレーム２のタブ部に載置して、同半導体
素子１の電極部を金属細線３によつてリードフレ
ーム２の外部電極リード部に電極接続したのち、
これらを外囲樹脂４で封止したものである。DESCRIPTION OF EXAMPLES The present invention will be described in detail below using examples. As shown in the schematic cross-sectional view of the drawing, a resin-sealed semiconductor device is constructed by placing a semiconductor element (chip) 1 on a tab part of a lead frame 2 mainly made of copper, and connecting the electrode part of the semiconductor element 1 with thin metal wires. After connecting the electrode to the external electrode lead part of the lead frame 2 by 3,
These are sealed with an outer resin 4.
本発明の実施例で使用されるエポキシ樹脂主剤
は、エポキシ当量210〜270のノボラツク型エポキ
シ樹脂、例えば、クレゾール１ボラツクのポリグ
リシジルエーテル型のエポキシ樹脂、ハロゲン化
フエノールノボラツクのポリグリシジルエーテル
型エポキシ樹脂などが好適である。また、かかる
ノボラツク型エポキシ樹脂に対して、ビスフエノ
ール型エポキシ樹脂、グリシジルエステル型エポ
キシ樹脂、グリシジルアミン型エポキシ樹脂、脂
環型エポキシ樹脂、複素環型エポキシ樹脂などの
各種エポキシ樹脂を、35重量％以下の配合比率で
混合して用いることもできる。 The epoxy resin base used in the examples of the present invention is a novolak type epoxy resin having an epoxy equivalent of 210 to 270, such as a polyglycidyl ether type epoxy resin of cresol 1 volac, or a polyglycidyl ether type epoxy resin of halogenated phenol novolak. Resin etc. are suitable. In addition, 35% by weight of various epoxy resins such as bisphenol epoxy resin, glycidyl ester epoxy resin, glycidylamine epoxy resin, alicyclic epoxy resin, and heterocyclic epoxy resin are added to the novolac type epoxy resin. They can also be mixed and used in the following blending ratios.
硬化剤としては、ノボラツク型フエノール樹脂
と芳香族アミンアダクトとを併用し、とりわけ、
両者の等量配合物を前記樹脂主剤に同量組成で用
いるのが適する。ノボラツク型フエノール樹脂の
みを硬化剤に単独使用すると、金属のマイグレー
シヨンを誘発するが、芳香族アミンアダクトをノ
ボラツク型フエノール樹脂と等量配合して併用す
ることにより、それが確実に抑えられる。また、
単に芳香族アミン系硬化剤の数％の配合では確実
性に乏しい。 As a curing agent, a novolak type phenolic resin and an aromatic amine adduct are used in combination, and in particular,
It is suitable to use equal amounts of both in the resin base resin. If a novolak type phenolic resin is used alone as a curing agent, metal migration will be induced, but this can be reliably suppressed by blending an aromatic amine adduct with a novolak type phenolic resin in an equal amount. Also,
Simply adding a few percent of the aromatic amine curing agent is not reliable.
なお、硬化剤として、ノボラツク型フエノール
樹脂および芳香族アミンアダクトに加えて、ジシ
アンジアミド、イミダゾール、酸無水物系などの
硬化剤を併用することもできるが、その場合には
添加量に応じて、樹脂特性が低下することを承知
して、許容量を設定しなければならない。 In addition to the novolak type phenolic resin and aromatic amine adduct, curing agents such as dicyandiamide, imidazole, and acid anhydride can also be used as curing agents, but in that case, depending on the amount added, the resin Acceptable amounts must be set with the understanding that the characteristics will deteriorate.
第４級有機ホスフイン化合物は、前述のエポキ
シ樹脂主剤および硬化剤の配合物に添加すると、
この樹脂の硬化促進剤として作用する。有機ホス
フイン化合物としては、例えば、フエニルホスフ
イン、オクチルホスフインなどの第１級有機ホス
フイン化合物を初めとして、メチルジフエニルホ
スフイン、ブチルフエニルホスフイン、ジフエニ
ルホスフインなどの第２級有機ホスフイン化合
物、トリフエニルホスフイン、トリブチルホスフ
イン、トリシクロヘキシニルホスフインなどの第
３級有機ホスフイン化合物などもあるが、これら
は、テトラフエニルホスフインで代表されるよう
な第４級有機ホスフイン化合物と比べると、不純
物の混在する割合が約１桁大である。第１級〜第
３級の各級有機ホスフイン化合物から第４級有機
ホスフイン化合物にかえると、良好な結果が得ら
れる。第４級有機ホスフイン化合物の添加適量
は、エポキシ樹脂主剤および硬化剤の配合物、す
なわち、樹脂成分に対して、0.05〜0.5重量％の
範囲である。 When the quaternary organic phosphine compound is added to the above-mentioned epoxy resin base and curing agent formulation,
It acts as a curing accelerator for this resin. Examples of organic phosphine compounds include primary organic phosphine compounds such as phenylphosphine and octylphosphine, and secondary organic phosphine compounds such as methyldiphenylphosphine, butylphenylphosphine and diphenylphosphine. There are also tertiary organic phosphine compounds such as phosphine compounds, triphenylphosphine, tributylphosphine, and tricyclohexynylphosphine, but these are quaternary organic phosphine compounds such as tetraphenylphosphine. Compared to this, the proportion of impurities mixed in is about one order of magnitude larger. Good results can be obtained by switching from primary to tertiary organic phosphine compounds to quaternary organic phosphine compounds. The appropriate amount of the quaternary organic phosphine compound to be added is in the range of 0.05 to 0.5% by weight based on the blend of the epoxy resin base and curing agent, that is, the resin component.
なお、実際の配合に際しては、テトラフエニル
ホスフインの結晶を粉砕機のボールミルで６時
間、粉砕処理したものを、樹脂成分に対して上述
の範囲内の割合で添加した。 In the actual blending, tetraphenylphosphine crystals were pulverized in a ball mill of a pulverizer for 6 hours and added to the resin component in a proportion within the above-mentioned range.
さらに、成形用エポキシ樹脂組成物には、通
常、無機質充填材を混入させるが、本発明実施例
も、石英ガラス粉末、結晶性シリカ粉末、ガラス
繊維、アルミナなどを適宜添加して使用できる。
無機質充填材の添加適量は樹脂成分に対して、35
〜70重量％である。なお、本実施例による配合の
エポキシ樹脂組成物は、前述の各種無機充填材と
のなじみがよく、従来技術で、しばしば、同充填
剤と併用される高価なカツプリング剤例えば、ク
ロロシランは使用しなくてもよく、したがつて、
このカツプリング剤に含まれるハロゲン化物系不
純物の混入を避けることができる。とくに、前記
充填剤は、通常、シリカ粉末が用いられるが前記
芳香族アミンアダクト硬化剤とのなじみがよいの
で、予め、同硬化剤と十分混合したのちに、それ
らを前記エポキシ樹脂主剤と混合して成形用エポ
キシ樹脂組成物を調整すると、同配合組成物の均
一性がいつそうよい。 Further, although an inorganic filler is usually mixed into the epoxy resin composition for molding, the embodiments of the present invention can also be used by appropriately adding quartz glass powder, crystalline silica powder, glass fiber, alumina, etc.
The appropriate amount of inorganic filler to be added is 35% to the resin component.
~70% by weight. The epoxy resin composition formulated according to this example has good compatibility with the various inorganic fillers described above, and does not use expensive coupling agents, such as chlorosilane, which are often used in combination with the fillers in the prior art. Therefore,
Contamination with halide impurities contained in this coupling agent can be avoided. In particular, as the filler, silica powder is usually used, and since it is compatible with the aromatic amine adduct curing agent, it is necessary to mix it sufficiently with the curing agent in advance and then mix it with the epoxy resin base material. If the epoxy resin composition for molding is prepared by using the same method, the uniformity of the blended composition will be better.
前記エポキシ樹脂組成物は、成型材料として調
整する場合には、例えば、所定の組成比に選んだ
原料組成混合物を、ミキサーなどによつて、十分
に混合したのち、熱ロールによる溶融混合処理ま
たはニーダーなどによる混合処理を加えることに
より、成型に適したものが得られる。そして、こ
のエポキシ樹脂組成物による成型材料は、半導体
装置の封止法としてはよく知られている各成型
法、例えば、低圧トランスフア成型法、インジエ
クシヨン成型法、圧縮成型法、注型法など、ほと
んど全ての封止成型技術に適用可能である。 When preparing the epoxy resin composition as a molding material, for example, a raw material composition mixture selected to have a predetermined composition ratio is thoroughly mixed using a mixer or the like, and then melt-mixed using heated rolls or kneaded. By adding a mixing process such as, a product suitable for molding can be obtained. The molding material made from this epoxy resin composition can be used by various molding methods that are well known for encapsulating semiconductor devices, such as low-pressure transfer molding, injection molding, compression molding, and casting. It is applicable to almost all sealing molding techniques.
また、特殊な封止法として、溶剤型あるいは非
溶剤型の組成物を用いて半導体表面を被覆する封
止法、半導体表面の局部被覆、いわゆる、ジヤン
クシヨンコーテイング法にも適用できる。 Further, as a special sealing method, it is also applicable to a sealing method in which a semiconductor surface is coated using a solvent-type or non-solvent-type composition, and a so-called juncture coating method, in which a semiconductor surface is locally coated.
このエポキシ樹脂組成物中の不純物は、第４級
有機ホスフイン化合物を用いることにより、塩素
イオン、ナトリウムイオンなどは、それぞれ、
3ppm以下、加水分解性塩素は、0.05重量％以下
の各含有量に抑えることが可能になつた。 Impurities in this epoxy resin composition are removed by using a quaternary organic phosphine compound, and chloride ions, sodium ions, etc. are removed, respectively.
It has become possible to suppress the content of hydrolyzable chlorine to 3 ppm or less and to 0.05% by weight or less.
さて、このエポキシ樹脂組成物の硬化処理に
は、加熱温度が140℃〜260℃のとき、30分〜0.25
分（15秒）で、100％近くの硬化が進行する。そ
して、この硬化処理のみで、すなわち、従来の第
１級、第２級あるいは第３級有機ホスフイン化合
物を用いた場合に必要であつたアフタキユア工程
を省略しても、ガラス転移温度が140〜180℃の、
高温安定性のよいエポキシ樹脂硬化物が得られ
る。 Now, for the curing treatment of this epoxy resin composition, when the heating temperature is 140°C to 260°C, the heating temperature is 30 minutes to 0.25°C.
In minutes (15 seconds), nearly 100% curing progresses. Even with this curing treatment alone, that is, even if the after-cure step that is necessary when using conventional primary, secondary, or tertiary organic phosphine compounds is omitted, the glass transition temperature can be increased from 140 to 180. ℃,
A cured epoxy resin product with good high temperature stability is obtained.
前記エポキシ樹脂硬化物で封止された半導体装
置は、熱衝撃性にすぐれており、例えば、−65℃
〜＋150℃の温度サイクル試験で200回以上の耐久
性を有する。また、透湿劣化加速試験法として知
られるプレツシヤークツカーテストで、２気圧、
121℃の条件下、500時間以上の安定性がある。さ
らに、85℃、85％RHの温度、高湿条件下でのバ
イアス印加試験においても、その耐久性は1000時
間以上であり、同条件下での金属のマイグレーシ
ヨンも、2000時間の経過後でも、全く生じなかつ
た。 The semiconductor device sealed with the cured epoxy resin has excellent thermal shock resistance, for example, at -65°C.
Durable over 200 times in temperature cycle tests up to +150℃. In addition, the pressure test, known as the moisture permeability deterioration accelerated test method, was conducted at 2 atm.
Stable for over 500 hours at 121℃. Furthermore, in a bias application test at a temperature of 85℃, 85% RH, and high humidity conditions, its durability was over 1000 hours, and metal migration under the same conditions was also confirmed even after 2000 hours. , did not occur at all.
また、配合組成物の保存性に関しても、例え
ば、従来の第１級〜第３級有機ホスフイン化合物
のいずれかを添加した酸無水物系、ジシアンジア
ミドあるいはイミダゾールのみ、ノボラツク型フ
エノールのみ、芳香族アミン硬化剤のみの配合物
にくらべ、本発明実施例の第４級有機ホスフイン
化合物を添加したものは保存性が２〜３倍に改善
される。 In addition, regarding the storage stability of the compounded composition, for example, acid anhydride type added with any of the conventional primary to tertiary organic phosphine compounds, only dicyandiamide or imidazole, only novolak type phenol, aromatic amine curing Compared to the formulation containing only the agent, the storage stability of the formulation containing the quaternary organic phosphine compound according to the examples of the present invention is improved by two to three times.
発明の効果
本発明によれば、樹脂封止型半導体装置の熱衝
撃性、透湿性、温度サイクルならびに高温、高湿
条件下のバイアス印加試験など、ほとんどの試験
に対して、高い耐久性能を有し、半導体装置の高
信頼性が保持される。また、本発明の実施例は、
製造過程における配合組成物の保存性もすぐれて
おり、利用率の向上など、製造コスト面での損率
が軽減され、経済性にもすぐれている。Effects of the Invention According to the present invention, high durability performance is achieved for most tests such as thermal shock resistance, moisture permeability, temperature cycle, and bias application tests under high temperature and high humidity conditions for resin-sealed semiconductor devices. However, high reliability of the semiconductor device is maintained. Further, the embodiments of the present invention include:
The compounded composition has excellent storage stability during the manufacturing process, and the loss rate in terms of manufacturing costs is reduced due to improved utilization rate, and it is also highly economical.
図は本発明実施例装置の概要断面図である。
１……半導体素子（チツプ）、２……リードフ
レーム、３……金属細線、４……外囲樹脂。
The figure is a schematic sectional view of an apparatus according to an embodiment of the present invention. 1... Semiconductor element (chip), 2... Lead frame, 3... Fine metal wire, 4... Surrounding resin.
Claims (1)
ラツク型フエノール樹脂と芳香族アミンアダクト
との等量配合物を硬化剤とし、前記主剤と前記硬
化剤とを同重量割合で混合した組成物中に、第４
級有機ホスフイン化合物を0.05〜0.5重量％の範
囲で添加した樹脂組成物により封止された樹脂封
止形半導体装置。1. A novolac type epoxy resin is used as a main ingredient, a mixture of equal amounts of a novolac type phenolic resin and an aromatic amine adduct is used as a curing agent, and a fourth
A resin-sealed semiconductor device encapsulated with a resin composition containing a class organic phosphine compound in an amount of 0.05 to 0.5% by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58107088A JPS59232116A (en) | 1983-06-15 | 1983-06-15 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58107088A JPS59232116A (en) | 1983-06-15 | 1983-06-15 | Resin-sealed semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59232116A JPS59232116A (en) | 1984-12-26 |
| JPH0413372B2 true JPH0413372B2 (en) | 1992-03-09 |
Family
ID=14450160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58107088A Granted JPS59232116A (en) | 1983-06-15 | 1983-06-15 | Resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59232116A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS501199A (en) * | 1973-05-07 | 1975-01-08 | ||
| JPS5515509A (en) * | 1978-07-19 | 1980-02-02 | Nippon Telegr & Teleph Corp <Ntt> | Cursor controller for document editing process |
| JPS55155019A (en) * | 1979-05-23 | 1980-12-03 | Mitsui Petrochem Ind Ltd | Epoxy resin conposition |
| JPS55155020A (en) * | 1979-05-24 | 1980-12-03 | Mitsui Petrochem Ind Ltd | Epoxy resin composition |
| JPS572329A (en) * | 1980-06-05 | 1982-01-07 | Toshiba Corp | Epoxy resin type composition and semiconductor device of resin sealing type |
-
1983
- 1983-06-15 JP JP58107088A patent/JPS59232116A/en active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS501199A (en) * | 1973-05-07 | 1975-01-08 | ||
| JPS5515509A (en) * | 1978-07-19 | 1980-02-02 | Nippon Telegr & Teleph Corp <Ntt> | Cursor controller for document editing process |
| JPS55155019A (en) * | 1979-05-23 | 1980-12-03 | Mitsui Petrochem Ind Ltd | Epoxy resin conposition |
| JPS55155020A (en) * | 1979-05-24 | 1980-12-03 | Mitsui Petrochem Ind Ltd | Epoxy resin composition |
| JPS572329A (en) * | 1980-06-05 | 1982-01-07 | Toshiba Corp | Epoxy resin type composition and semiconductor device of resin sealing type |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59232116A (en) | 1984-12-26 |
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