JPH0288621A - Epoxy resin composition for sealing semiconductor - Google Patents
Epoxy resin composition for sealing semiconductorInfo
- Publication number
- JPH0288621A JPH0288621A JP24311188A JP24311188A JPH0288621A JP H0288621 A JPH0288621 A JP H0288621A JP 24311188 A JP24311188 A JP 24311188A JP 24311188 A JP24311188 A JP 24311188A JP H0288621 A JPH0288621 A JP H0288621A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- component
- resin composition
- amount
- epoxy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 48
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 48
- 239000000203 mixture Substances 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 238000007789 sealing Methods 0.000 title description 4
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 13
- 239000011256 inorganic filler Substances 0.000 claims abstract description 12
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 12
- JENBVMYWZLPMNV-UHFFFAOYSA-N 2-[[5-(oxiran-2-ylmethyl)naphthalen-2-yl]methyl]oxirane Chemical compound C=1C=C2C(CC3OC3)=CC=CC2=CC=1CC1CO1 JENBVMYWZLPMNV-UHFFFAOYSA-N 0.000 claims abstract description 8
- 125000003700 epoxy group Chemical group 0.000 claims abstract description 8
- 238000005538 encapsulation Methods 0.000 claims description 13
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000002156 mixing Methods 0.000 abstract description 10
- 229920003986 novolac Polymers 0.000 abstract description 9
- 229920005989 resin Polymers 0.000 abstract description 8
- 239000011347 resin Substances 0.000 abstract description 8
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000002245 particle Substances 0.000 abstract description 3
- 239000003086 colorant Substances 0.000 abstract description 2
- 229910002026 crystalline silica Inorganic materials 0.000 abstract description 2
- 239000006082 mold release agent Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract 1
- 238000012360 testing method Methods 0.000 description 8
- 230000007423 decrease Effects 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 7
- 230000035939 shock Effects 0.000 description 7
- 239000000843 powder Substances 0.000 description 5
- 229920002379 silicone rubber Polymers 0.000 description 5
- 239000004945 silicone rubber Substances 0.000 description 5
- -1 chlorine ions Chemical class 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- 239000011342 resin composition Substances 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 2
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical class C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、半導体封止用エポキシ樹脂組成物に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to an epoxy resin composition for semiconductor encapsulation.
さらに詳しくは、特定の液状エポキシ樹脂を含有し、硬
化物の耐熱性、耐湿性および耐冷熱衝撃性を損なわずに
流動性を向上させた半導体封止用エポキシ樹脂組成物に
関する。More specifically, the present invention relates to an epoxy resin composition for semiconductor encapsulation that contains a specific liquid epoxy resin and has improved fluidity without impairing the heat resistance, moisture resistance, and cold shock resistance of the cured product.
［従来の技術］
ＩＣ，ＬＳＩなどの半導体装置においては、その半導体
素子をシリコーン樹脂、エポキシ樹脂などによって封止
する樹脂封止法が広く採用されている。[Prior Art] In semiconductor devices such as ICs and LSIs, resin encapsulation methods are widely used in which semiconductor elements are encapsulated with silicone resin, epoxy resin, or the like.
これらの封止樹脂のなかでも、とくに、ノボラック型エ
ポキシ樹脂とフェノールノボラック樹脂とを組合わせた
エポキシ樹脂組成物（たとえば特開昭６３−７７９３０
号公報に開示された組成物）は、封止後の耐湿性を効果
的かつ良好に保持できるとともに、比較的安価であるこ
ととも相俟って汎用されている。Among these sealing resins, epoxy resin compositions in which a novolac type epoxy resin and a phenol novolac resin are combined (for example, Japanese Patent Application Laid-Open No. 63-77930
The composition disclosed in the above publication is widely used because it can effectively and well maintain moisture resistance after sealing and is relatively inexpensive.
しかし、このエポキシ樹脂組成物により大容量の半導体
素子を封止したばあいには、硬化時の収縮によるストレ
スまたは内部素子とエポキシ樹脂との膨張係数の差によ
って生じるストレスなどにより、素子のボンディングワ
イヤが変形したり、断線、素子パッシベーションのクラ
ックなどが発生したりしやすいという問題がある。そこ
でこれらのストレスを低減せしめるために、エポキシマ
トリックスをシリコーンゴムなどにより可撓化したりま
たは膨張係数を小さくするために無機充填剤の添加量を
増大せしめるなどの方法が検討されている。However, when a large-capacity semiconductor element is sealed with this epoxy resin composition, stress caused by shrinkage during curing or stress caused by the difference in expansion coefficient between the internal element and the epoxy resin may cause the bonding wires of the element to There are problems in that wires are easily deformed, wire breaks, and cracks in element passivation occur. Therefore, in order to reduce these stresses, methods are being considered, such as making the epoxy matrix more flexible with silicone rubber or the like, or increasing the amount of inorganic filler added to reduce the expansion coefficient.
［発明が解決しようとする課題］
しかしながら、シリコーンゴムなどによる可撓化は樹脂
組成物の成形性の低下につながる可能性がある。また、
無機充填剤の添加量を増大し、膨張係数を低減せしめる
ためには、８０％（重量％、以下同様）以上の添加量が
必要であり、そのため樹脂組成物の溶融粘度が増大し、
流動性が著しく低下し、素子の封止に際し、高圧成形が
必要となるという問題点がある。[Problems to be Solved by the Invention] However, flexibility using silicone rubber or the like may lead to a decrease in moldability of the resin composition. Also,
In order to increase the amount of inorganic filler added and reduce the expansion coefficient, it is necessary to add an amount of 80% (wt%) or more (the same applies hereinafter), which increases the melt viscosity of the resin composition.
There are problems in that fluidity is significantly reduced and high-pressure molding is required to seal the device.
本発明は、かかる問題点を解決するためになされたもの
であり、シリコーンゴムなどによる可撓化や、無機充填
剤の高充填によっても高い流動性を保ちつつ、かつ耐熱
性、耐湿性および耐冷熱衝撃性を有する硬化物を与える
半導体封止用エポキシ樹脂組成物をうろことを目的とす
る。The present invention was made to solve these problems, and it maintains high fluidity even by making it flexible with silicone rubber and filling with an inorganic filler, and has high heat resistance, moisture resistance, and resistance. The purpose of this invention is to produce an epoxy resin composition for semiconductor encapsulation that provides a cured product having thermal shock properties.
［課題を解決するための手段］
すなわち、本発明は、
（＾）（ａ）１、６−ジグリシジルナフタレンとおよび
＋ｂ＋ （ａ＞以外の１分子中に２個以上のエポキシ基
を有するエポキシ樹脂、
（Ｂ）エポキシ樹脂の硬化剤および
（Ｃ）無機充填剤
を含有してなるエポキシ樹脂組成物であって、（ａ）成
分の１，６−ジグリシジルナフタレンを山）成分の（ａ
）以外の１分子中に２個以上のエポキシ基を有するエポ
キシ樹脂に対して、重量比で（ａ）／ ＋ｂ＋ ＝ ０
．０５〜１０の範囲で含有させたことを特徴とする半導
体封止用エポキシ樹脂組成物
に関する。[Means for Solving the Problems] That is, the present invention provides (^) (a) an epoxy resin having 1,6-diglycidylnaphthalene and +b+ (a> having two or more epoxy groups in one molecule) , An epoxy resin composition comprising (B) an epoxy resin curing agent and (C) an inorganic filler, wherein the 1,6-diglycidylnaphthalene component (a) is combined with the component (a)
For epoxy resins having two or more epoxy groups in one molecule other than ), the weight ratio is (a)/+b+ = 0
．． It relates to an epoxy resin composition for semiconductor encapsulation, characterized in that it contains in a range of 05 to 10.
［作 用］
本発明の半導体封止用エポキシ樹脂組成物は、特定の液
状エポキシ樹脂を含有したものであり、それによって硬
化物の耐熱性、耐湿性および耐冷熱衝撃性を低下させる
ことなく、高い流動性を与えられたものである。[Function] The epoxy resin composition for semiconductor encapsulation of the present invention contains a specific liquid epoxy resin, so that the cured product can be cured without reducing its heat resistance, moisture resistance, and cold shock resistance. It is endowed with high liquidity.
［実施例］
本発明の半導体封止用エポキシ樹脂組成物には、エポキ
シ樹脂（（Ａ）成分）として、＜ａ：＞ １ 、６−ジ
グリシジルナフタレンと（ｂ）（ａ）以外の１分子中に
２個以上のエポキシ基を有するエポキシ樹脂とが用いら
れる。[Example] The epoxy resin composition for semiconductor encapsulation of the present invention contains <a:> 1,6-diglycidylnaphthalene and (b) one molecule other than (a) as the epoxy resin (component (A)). An epoxy resin having two or more epoxy groups therein is used.
前記（ａ）成分である１、６−ジグリシジルナフタレン
は、式：
で示されるエポキシ樹脂である。この１．６−ジグリシ
ジルナフタレンには、通常、塩素を含む化合物などの不
純物が混入しているが、本発明においてはこのような塩
素を含む化合物などの混入量かできるだけ少ないものを
用いることが好ましく、たとえば塩素イオンの含有量は
２ｐｐｍ以下であるのが好ましい。1,6-diglycidylnaphthalene, which is the component (a), is an epoxy resin represented by the formula: This 1,6-diglycidylnaphthalene usually contains impurities such as chlorine-containing compounds, but in the present invention, it is preferable to use as little amount of such chlorine-containing compounds as possible. Preferably, for example, the content of chlorine ions is 2 ppm or less.
前記（ｂ）成分である（ａ）以外の１分子中に２個以上
のエポキシ基を有するエポキシ樹脂の具体例としては、
たとえばノボラック系エポキシ樹脂、トリグリシジルフ
ェニルメタン系エポキシ樹脂、ビスフェノールＡ型エポ
キシ樹脂、脂環式系エポキシ樹脂など、種々のタイプの
エポキシ樹脂があげられるが、これらのなかでもノボラ
ック系エポキシ樹脂やトリグリシジルフェニルメタン系
エポキシ樹脂は高温特性に優れているので好ましい。こ
れらは単独で用いてもよく、２種以上を併用してもよい
。Specific examples of epoxy resins having two or more epoxy groups in one molecule other than (a), which is the component (b), include:
For example, there are various types of epoxy resins such as novolak epoxy resin, triglycidyl phenylmethane epoxy resin, bisphenol A epoxy resin, and alicyclic epoxy resin. Among these, novolak epoxy resin and triglycidyl epoxy resin Phenylmethane-based epoxy resins are preferred because they have excellent high-temperature properties. These may be used alone or in combination of two or more.
さらに（ｂ）成分として、前記具体例としてあげたエポ
キシ樹脂とともに必要に応じて臭素化ノボラック系エポ
キシ樹脂、臭素化ビスフェノールＡ型エポキシ樹脂など
の臭素化エポキシ樹脂を併用してもよい。このばあい、
臭素化エポキシ樹脂の使用割合は、山）成分中、７０％
以下であるのが好ましい。Furthermore, as component (b), a brominated epoxy resin such as a brominated novolak epoxy resin or a brominated bisphenol A epoxy resin may be used in combination with the epoxy resin mentioned as the specific example above, if necessary. In this case,
The proportion of brominated epoxy resin used is 70% in the ingredients
It is preferable that it is below.
前記（ｂ＋成分１分子中のエポキシ基の数が２個未満の
ばあいには、ガラス転移温度が低下し、耐熱性、耐湿性
が低下する。When the number of epoxy groups in one molecule of the (b+ component) is less than two, the glass transition temperature decreases, and the heat resistance and moisture resistance decrease.
前記（ａ）成分と（ｂ＋酸成分配合割合は、重量比で（
ａ）／ ＋ｂ＋ ＝ ０．０５〜１０．好ましくは０．
１〜５の範囲である。（ａ）／市）が０．０５未満のば
あいには、流動性の改善効果が期待できず、（ａ）／山
）が１０をこえると組成物のガラス転移温度が低くなっ
て硬化物の耐熱性が低下し、いずれも好ましくない。The blending ratio of component (a) and (b+acid component) is (by weight)
a)/+b+ = 0.05-10. Preferably 0.
It ranges from 1 to 5. If (a) / mountain) is less than 0.05, no improvement in fluidity can be expected, and if (a) / mountain) exceeds 10, the glass transition temperature of the composition will become low, resulting in a cured product. The heat resistance of the material decreases, which is not preferable.
本発明に用いられる（Ｂ）成分であるエポキシ樹脂の硬
化剤としては、従来慣用されている公知のものでよく、
たとえばフェノールノボラック型樹脂、クレゾールノボ
ラック型樹脂などのフェノール系硬化剤、メチルヘキサ
ハイドロ無水フタル酸、メチルテトラハイドロ無水フタ
ル酸などの酸無水物系硬化剤、ジシアンジアミド、ジア
ミノジフェニルメタン、ジアミノジフェニルスルホンな
どのアミン系硬化剤などがあげられる。このうち、フェ
ノール系硬化剤が耐湿性の点で好ましい。As the curing agent for the epoxy resin which is the component (B) used in the present invention, any conventionally known and commonly used curing agent may be used.
For example, phenolic curing agents such as phenol novolac type resins and cresol novolac type resins, acid anhydride curing agents such as methylhexahydrophthalic anhydride and methyltetrahydrophthalic anhydride, and amines such as dicyandiamide, diaminodiphenylmethane, and diaminodiphenylsulfone. Examples include hardening agents. Among these, phenolic curing agents are preferred in terms of moisture resistance.
硬化剤の配合量は、（ａ）成分と山）成分との配合比や
、市成分の重合度、硬化剤の種類などによっても異なる
が、通常、（Ａ）成分１００部に対して１〜１００部が
好ましい。The amount of curing agent to be blended varies depending on the blending ratio of component (a) and component (a), the degree of polymerization of the component, the type of curing agent, etc., but it is usually 1 to 1 to 100 parts of component (A). 100 parts is preferred.
本発明に用いられる（Ｃ）成分である無機充填剤にと（
に限定はないが、当該充填剤の９０％以上が１００ρ以
下の粒径であるのが好ましい。このような無機充填剤の
具体例としては、たとえば結晶性シリカ粉、溶融シリカ
粉、アルミナ粉、タルク、石英ガラス粉、炭酸カルシウ
ム粉、ガラス繊維などがあげられる。The inorganic filler which is component (C) used in the present invention (
Although there is no limitation, it is preferable that 90% or more of the filler has a particle size of 100ρ or less. Specific examples of such inorganic fillers include crystalline silica powder, fused silica powder, alumina powder, talc, quartz glass powder, calcium carbonate powder, and glass fiber.
無機充填剤の添加量は、組成物中、５０〜８５％、さら
には７０〜８３％程度であるのが好ましい。該添加量が
５０％未満のばあいには、線膨張係数および硬化収縮を
低下させる効果が小さくなり、８５％をこえると流動性
が低下して作業性が低下する傾向にあるので、５０〜８
５％程度の範囲内で要求される特性に対応し、その配合
量を適宜に選択するのが好ましい。The amount of the inorganic filler added to the composition is preferably about 50 to 85%, more preferably about 70 to 83%. If the amount added is less than 50%, the effect of lowering the linear expansion coefficient and curing shrinkage will be small, and if it exceeds 85%, fluidity will decrease and workability will tend to decrease. 8
It is preferable to appropriately select the blending amount within a range of about 5% to meet the required properties.
さらに本発明の組成物には、必要に応じてイミダゾール
系化合物、第３級アミン、リン系化合物などの硬化促進
剤、カーボンブラックなどの着色剤、カルナバワックス
、合成ワックスなどの離型剤、三酸化アンチモンなどの
難燃剤、γ−グリシドキシプロピルトリメトキシシラン
などのカップリング剤、シリコーンゴム、フッ素ゴムな
どのゴム成分などを、組成物中での含有量が全体で１０
％をこえない範囲でそれぞれに添加してもよい。Furthermore, the composition of the present invention may optionally contain a curing accelerator such as an imidazole compound, a tertiary amine, or a phosphorus compound, a coloring agent such as carbon black, a mold release agent such as carnauba wax, or a synthetic wax. Flame retardants such as antimony oxide, coupling agents such as γ-glycidoxypropyltrimethoxysilane, rubber components such as silicone rubber and fluororubber, etc., are contained in the composition in a total content of 10%.
It may be added to each within a range not exceeding %.
本発明の半導体封止用エポキシ樹脂組成物は、前記の成
分をたとえば、ローラー、ニーダミキサ、エクストルー
ダ、ヘンシェルミキサー（■三井三池製作所製）など、
一般的に使用されている公知の混合装置を用いて混合す
ることにより容易に調製しうる。The epoxy resin composition for semiconductor encapsulation of the present invention includes the above-mentioned components, for example, a roller, a kneader mixer, an extruder, a Henschel mixer (manufactured by Mitsui Miike Seisakusho), etc.
It can be easily prepared by mixing using a commonly used known mixing device.
つぎに本発明の半導体封止用エポキシ樹脂組成物を実施
例および比較例によってさらに詳細に説明する。Next, the epoxy resin composition for semiconductor encapsulation of the present invention will be explained in more detail with reference to Examples and Comparative Examples.
実施例１〜９および比較例１〜３
第１表に示す組成になるようにエポキシ樹脂、硬化剤、
無機充填剤およびその他の成分を調製し８０〜１００℃
の熱ロールで５〜７分間混線・粉砕したのち、１１００
〜１５０ＯＮ９４の圧力下でタブレットを作製した。Examples 1 to 9 and Comparative Examples 1 to 3 Epoxy resin, curing agent,
Prepare inorganic filler and other ingredients at 80-100℃
After mixing and pulverizing for 5 to 7 minutes with a hot roll,
Tablets were made under pressure of ~150 ON94.
えられたタブレットを用いて、プランジャー圧力８０に
９１１、金型温度１７５±５℃、成形時間９０秒の条件
でトランスファー成形し、各種信頼性評価用モニターチ
ップおよび各種評価用試片を作製した。Using the obtained tablet, transfer molding was performed under the conditions of a plunger pressure of 80 to 911, a mold temperature of 175 ± 5 ° C., and a molding time of 90 seconds to produce various reliability evaluation monitor chips and various evaluation specimens. .
比較例２は流動性がわるく各種評価用試片を作製するこ
とができなかった。Comparative Example 2 had poor fluidity and could not be used to prepare specimens for various evaluations.
なお、第２表に示す流動性の測定は、金型温度１８０℃
、プランジャー圧力８０Ｋｇ４１２分後のフロー距離よ
り求めた。Note that the fluidity measurements shown in Table 2 were performed at a mold temperature of 180°C.
, determined from the flow distance after 412 minutes at a plunger pressure of 80 kg.
つぎにこの各種信頼性評価用モニターチップおよび各種
評価用試片に１７５℃、８時間の後硬化を施した。Next, the various reliability evaluation monitor chips and various evaluation specimens were post-cured at 175° C. for 8 hours.
つぎにえられた各種評価用試片を用いて曲げ弾性率、曲
げ強度、線膨張係数およびガラス転移温度を測定した。Next, the flexural modulus, flexural strength, linear expansion coefficient, and glass transition temperature were measured using the various test specimens obtained.
結果を第２表に示す。The results are shown in Table 2.
さらに、前記のように処理された各種信頼性評価用モニ
ターチップを用いて、耐熱信頼性試験、耐湿信頼性試験
および耐冷熱衝撃試験を下記の方法で行なった。結果を
第３表に示す。Furthermore, using the various monitor chips for reliability evaluation treated as described above, a heat resistance reliability test, a moisture resistance reliability test, and a cold shock resistance test were conducted in the following manner. The results are shown in Table 3.
（耐熱信頼性試験）
モニターチップを空気中、２５０℃の条件下に放置し、
モニターチップに不良が発生するまでの時間を測定する
。(Heat resistance reliability test) The monitor chip was left in the air at 250°C.
Measures the time it takes for a monitor chip to become defective.
（耐湿信頼性試験）
モニターチップ２０個をＰＣＴ（Ｐｒｅｓｓｕｒｅ Ｃ
ｏｏｋｅｒＴｅｓｔ）１３０℃、２．７気圧の条件で、
１０００時間放置したのち、不良モニターチップの個数
によって評価する。(Moisture resistance reliability test) 20 monitor chips were subjected to PCT (Pressure C
ookerTest) under the conditions of 130℃ and 2.7 atmospheres,
After leaving it for 1000 hours, it is evaluated based on the number of defective monitor chips.
（耐冷熱衝撃試験）
モニターチップ２０個を用い、−６５℃で３０分間と１
５０℃で３０分間とを１サイクルとし、２００サイクル
のちの不良モニターチップの個数によって評価前記第２
表に示す結果かられかるように、本発明の半導体封住用
エポキシ樹脂組成物を用いたばあいには、樹脂自体の曲
げ弾性率、曲げ強度、耐熱性および線膨張係数などの基
本的特性を損なうことなしに、無機充填剤の高充填がで
き、またシリコーンゴムの添加によっても流動性が低下
しない。しかも、第３表に示す結果かられかるように、
本発明の樹脂組成物で樹脂封止した素子は耐熱性、耐湿
性および耐冷熱衝撃性についても非常に優れ１ｃ特性を
有するものである。(Cold thermal shock test) Using 20 monitor chips, test at -65°C for 30 minutes and 1
One cycle is 30 minutes at 50°C, and the evaluation is based on the number of defective monitor chips after 200 cycles.
As can be seen from the results shown in the table, when the epoxy resin composition for semiconductor encapsulation of the present invention is used, the basic properties such as flexural modulus, flexural strength, heat resistance, and coefficient of linear expansion of the resin itself High inorganic filler filling can be achieved without impairing properties, and fluidity does not decrease even with the addition of silicone rubber. Moreover, as can be seen from the results shown in Table 3,
The device resin-sealed with the resin composition of the present invention has excellent heat resistance, moisture resistance, and cold shock resistance, and has 1c characteristics.
［発明の効果コ
本発明の半導体封止用エポキシ樹脂組成物は、エポキシ
樹脂成分として特定のエポキシ樹脂を含有するため、封
止樹脂硬化物の耐熱性、耐湿性および耐冷熱衝撃性を損
なうことなしに優れた流動性を有し、ＩＣ，ＬＳＩなど
の半導体封止樹脂として好適に使用できるという効果を
奏する。[Effects of the Invention] Since the epoxy resin composition for semiconductor encapsulation of the present invention contains a specific epoxy resin as an epoxy resin component, the heat resistance, moisture resistance, and cold shock resistance of the cured sealing resin product may be impaired. It has excellent fluidity and can be suitably used as a semiconductor encapsulation resin for ICs, LSIs, etc.
Claims (1)
ｂ）（ａ）以外の１分子中に２個以上のエポキシ基を有
するエポキシ樹脂、 （Ｂ）エポキシ樹脂の硬化剤および （Ｃ）無機充填剤 を含有してなるエポキシ樹脂組成物であって、（ａ）成
分の１、６−ジグリシジルナフタレンを（ｂ）成分の（
ａ）以外の１分子中に２個以上のエポキシ基を有するエ
ポキシ樹脂に対して、重量比で（ａ）／（ｂ）＝０．０
５〜１０の範囲で含有させたことを特徴とする半導体封
止用エポキシ樹脂組成物。[Scope of Claims] (A) (a) 1,6-diglycidylnaphthalene and (
b) An epoxy resin composition containing an epoxy resin other than (a) having two or more epoxy groups in one molecule, (B) an epoxy resin curing agent, and (C) an inorganic filler, Component (a), 1,6-diglycidylnaphthalene, and component (b), (
For epoxy resins other than a) having two or more epoxy groups in one molecule, weight ratio (a)/(b) = 0.0
An epoxy resin composition for semiconductor encapsulation, characterized in that it contains in a range of 5 to 10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24311188A JPH0657740B2 (en) | 1988-09-27 | 1988-09-27 | Epoxy resin composition for semiconductor encapsulation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24311188A JPH0657740B2 (en) | 1988-09-27 | 1988-09-27 | Epoxy resin composition for semiconductor encapsulation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0288621A true JPH0288621A (en) | 1990-03-28 |
| JPH0657740B2 JPH0657740B2 (en) | 1994-08-03 |
Family
ID=17098959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24311188A Expired - Lifetime JPH0657740B2 (en) | 1988-09-27 | 1988-09-27 | Epoxy resin composition for semiconductor encapsulation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0657740B2 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03237125A (en) * | 1990-02-14 | 1991-10-23 | Shin Etsu Chem Co Ltd | Thermosetting resin composition and cured material thereof |
| JPH04202519A (en) * | 1990-11-30 | 1992-07-23 | Toray Ind Inc | Epoxy resin composition |
| JPH04202518A (en) * | 1990-11-30 | 1992-07-23 | Toray Ind Inc | Epoxy resin composition |
| JPH04264155A (en) * | 1991-02-20 | 1992-09-18 | Toray Ind Inc | Epoxy resin composition for semiconductor sealing |
| US5298548A (en) * | 1991-05-21 | 1994-03-29 | Shin-Etsu Chemical Co., Ltd. | Epoxy resin composition and semiconductor devices encapsulated therewith |
| US5418266A (en) * | 1991-03-29 | 1995-05-23 | Shin-Etsu Chemical Co., Ltd. | Epoxy resin compositions and semiconductor devices encapsulated therewith |
| JPH08325357A (en) * | 1995-03-28 | 1996-12-10 | Toray Ind Inc | Epoxy resin composition for semiconductor sealing use and semiconductor device |
| JP2006505674A (en) * | 2002-11-05 | 2006-02-16 | ヘンケル コーポレイション | Organic acid-containing composition and method of use thereof |
| WO2018150779A1 (en) * | 2017-02-14 | 2018-08-23 | 京セラ株式会社 | Resin composition, resin sheet, semiconductor device and method for producing semiconductor device |
| JP2021095580A (en) * | 2019-06-10 | 2021-06-24 | 味の素株式会社 | Insulation resin material |
-
1988
- 1988-09-27 JP JP24311188A patent/JPH0657740B2/en not_active Expired - Lifetime
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03237125A (en) * | 1990-02-14 | 1991-10-23 | Shin Etsu Chem Co Ltd | Thermosetting resin composition and cured material thereof |
| JPH04202519A (en) * | 1990-11-30 | 1992-07-23 | Toray Ind Inc | Epoxy resin composition |
| JPH04202518A (en) * | 1990-11-30 | 1992-07-23 | Toray Ind Inc | Epoxy resin composition |
| JPH04264155A (en) * | 1991-02-20 | 1992-09-18 | Toray Ind Inc | Epoxy resin composition for semiconductor sealing |
| US5418266A (en) * | 1991-03-29 | 1995-05-23 | Shin-Etsu Chemical Co., Ltd. | Epoxy resin compositions and semiconductor devices encapsulated therewith |
| US5298548A (en) * | 1991-05-21 | 1994-03-29 | Shin-Etsu Chemical Co., Ltd. | Epoxy resin composition and semiconductor devices encapsulated therewith |
| JPH08325357A (en) * | 1995-03-28 | 1996-12-10 | Toray Ind Inc | Epoxy resin composition for semiconductor sealing use and semiconductor device |
| JP2006505674A (en) * | 2002-11-05 | 2006-02-16 | ヘンケル コーポレイション | Organic acid-containing composition and method of use thereof |
| WO2018150779A1 (en) * | 2017-02-14 | 2018-08-23 | 京セラ株式会社 | Resin composition, resin sheet, semiconductor device and method for producing semiconductor device |
| JP2021095580A (en) * | 2019-06-10 | 2021-06-24 | 味の素株式会社 | Insulation resin material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0657740B2 (en) | 1994-08-03 |
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