JPS59231865A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS59231865A
JPS59231865A JP58106089A JP10608983A JPS59231865A JP S59231865 A JPS59231865 A JP S59231865A JP 58106089 A JP58106089 A JP 58106089A JP 10608983 A JP10608983 A JP 10608983A JP S59231865 A JPS59231865 A JP S59231865A
Authority
JP
Japan
Prior art keywords
film
region
gate
inp
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58106089A
Other languages
English (en)
Japanese (ja)
Other versions
JPH055181B2 (enrdf_load_stackoverflow
Inventor
Seiichi Iwamatsu
誠一 岩松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP58106089A priority Critical patent/JPS59231865A/ja
Publication of JPS59231865A publication Critical patent/JPS59231865A/ja
Publication of JPH055181B2 publication Critical patent/JPH055181B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP58106089A 1983-06-14 1983-06-14 半導体装置 Granted JPS59231865A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58106089A JPS59231865A (ja) 1983-06-14 1983-06-14 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58106089A JPS59231865A (ja) 1983-06-14 1983-06-14 半導体装置

Publications (2)

Publication Number Publication Date
JPS59231865A true JPS59231865A (ja) 1984-12-26
JPH055181B2 JPH055181B2 (enrdf_load_stackoverflow) 1993-01-21

Family

ID=14424817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58106089A Granted JPS59231865A (ja) 1983-06-14 1983-06-14 半導体装置

Country Status (1)

Country Link
JP (1) JPS59231865A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63237475A (ja) * 1987-03-25 1988-10-03 Seiko Instr & Electronics Ltd Ｍｏｓ型電界効果トランジスタの製造方法
US5475244A (en) * 1990-10-31 1995-12-12 Canon Kabushiki Kaisha MIS transistor having second conductivity type source and drain regions sandwiching a channel region of a first conductivity type of a first semiconductor material formed on an insulating substrate, and a gate electrode formed on a main surface
WO2010067525A1 (ja) * 2008-12-08 2010-06-17 住友化学株式会社 半導体装置、半導体装置の製造方法、半導体基板、および半導体基板の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57122576A (en) * 1981-01-22 1982-07-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor treating method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57122576A (en) * 1981-01-22 1982-07-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor treating method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63237475A (ja) * 1987-03-25 1988-10-03 Seiko Instr & Electronics Ltd Ｍｏｓ型電界効果トランジスタの製造方法
US5475244A (en) * 1990-10-31 1995-12-12 Canon Kabushiki Kaisha MIS transistor having second conductivity type source and drain regions sandwiching a channel region of a first conductivity type of a first semiconductor material formed on an insulating substrate, and a gate electrode formed on a main surface
WO2010067525A1 (ja) * 2008-12-08 2010-06-17 住友化学株式会社 半導体装置、半導体装置の製造方法、半導体基板、および半導体基板の製造方法
CN102239549A (zh) * 2008-12-08 2011-11-09 住友化学株式会社 半导体装置，半导体装置的制造方法，半导体基板，和半导体基板的制造方法

Also Published As

Publication number Publication date
JPH055181B2 (enrdf_load_stackoverflow) 1993-01-21

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