JPS57122576A - Semiconductor treating method - Google Patents

Semiconductor treating method

Info

Publication number
JPS57122576A
JPS57122576A JP833581A JP833581A JPS57122576A JP S57122576 A JPS57122576 A JP S57122576A JP 833581 A JP833581 A JP 833581A JP 833581 A JP833581 A JP 833581A JP S57122576 A JPS57122576 A JP S57122576A
Authority
JP
Japan
Prior art keywords
semiconductor
melt
boat
arrow
molten liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP833581A
Other languages
Japanese (ja)
Inventor
Tokuro Omachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP833581A priority Critical patent/JPS57122576A/en
Publication of JPS57122576A publication Critical patent/JPS57122576A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To effectively remove an impurity precipitated on the surface of a semi-insulated semiconductor by dipping the semiconductor in a molten liquid of the semiconductor to saturated state at the prescribed temperature for the prescribed period of time or contacting the semiconductor with the molten liquid. CONSTITUTION:A semiconductor 1 to be treated is contained in a slide boat 2, and a slide boat 3 has a hole which contains a melt 4. In case of InP as the semiconductor 1, an In is normally used as the melt 4. When the entirety is heated to the prescribed temperature in a hydrogen atmosphere, the melt 4 is dissoled to the saturated state. Then, the boat 2 is moved in a direction of an arrow to completely cover the surface of a crystal 1 with the melt 4. In this manner, since the Fe element becoming in high density due to the redistribution to the surface of the InP crystal is dissolved in the melt 4, the density of the Fe in the semiconductor 1 is reduced. When the prescribed period of time is elapsed, the melt and the semiconductor 1 can be isolated by moving the boat in the direction of an arrow.
JP833581A 1981-01-22 1981-01-22 Semiconductor treating method Pending JPS57122576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP833581A JPS57122576A (en) 1981-01-22 1981-01-22 Semiconductor treating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP833581A JPS57122576A (en) 1981-01-22 1981-01-22 Semiconductor treating method

Publications (1)

Publication Number Publication Date
JPS57122576A true JPS57122576A (en) 1982-07-30

Family

ID=11690316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP833581A Pending JPS57122576A (en) 1981-01-22 1981-01-22 Semiconductor treating method

Country Status (1)

Country Link
JP (1) JPS57122576A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59231865A (en) * 1983-06-14 1984-12-26 Seiko Epson Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59231865A (en) * 1983-06-14 1984-12-26 Seiko Epson Corp Semiconductor device
JPH055181B2 (en) * 1983-06-14 1993-01-21 Seiko Epson Corp

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