JPS59222949A - 超高周波集積化電子回路装置 - Google Patents

超高周波集積化電子回路装置

Info

Publication number
JPS59222949A
JPS59222949A JP58098445A JP9844583A JPS59222949A JP S59222949 A JPS59222949 A JP S59222949A JP 58098445 A JP58098445 A JP 58098445A JP 9844583 A JP9844583 A JP 9844583A JP S59222949 A JPS59222949 A JP S59222949A
Authority
JP
Japan
Prior art keywords
external connection
pad
electronic circuit
reference potential
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58098445A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0524666B2 (enExample
Inventor
Masahiro Hirayama
昌宏 平山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP58098445A priority Critical patent/JPS59222949A/ja
Publication of JPS59222949A publication Critical patent/JPS59222949A/ja
Publication of JPH0524666B2 publication Critical patent/JPH0524666B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00Electrical arrangements for controlling or matching impedance
    • H10W44/20Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00Electrical arrangements for controlling or matching impedance
    • H10W44/20Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/203Electrical connections
    • H10W44/206Wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07541Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07551Controlling the environment, e.g. atmosphere composition or temperature characterised by changes in properties of the bond wires during the connecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5445Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5449Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/547Dispositions of multiple bond wires
    • H10W72/5473Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • H10W72/932Plan-view shape, i.e. in top view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP58098445A 1983-06-02 1983-06-02 超高周波集積化電子回路装置 Granted JPS59222949A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58098445A JPS59222949A (ja) 1983-06-02 1983-06-02 超高周波集積化電子回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58098445A JPS59222949A (ja) 1983-06-02 1983-06-02 超高周波集積化電子回路装置

Publications (2)

Publication Number Publication Date
JPS59222949A true JPS59222949A (ja) 1984-12-14
JPH0524666B2 JPH0524666B2 (enExample) 1993-04-08

Family

ID=14219940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58098445A Granted JPS59222949A (ja) 1983-06-02 1983-06-02 超高周波集積化電子回路装置

Country Status (1)

Country Link
JP (1) JPS59222949A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2573272A1 (fr) * 1984-11-14 1986-05-16 Int Standard Electric Corp Procede de realisation d'un substrat comportant un conducteur coaxial
US4979016A (en) * 1988-05-16 1990-12-18 Dallas Semiconductor Corporation Split lead package
US5684332A (en) * 1994-05-27 1997-11-04 Advanced Semiconductor Engineering, Inc. Method of packaging a semiconductor device with minimum bonding pad pitch and packaged device therefrom

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2573272A1 (fr) * 1984-11-14 1986-05-16 Int Standard Electric Corp Procede de realisation d'un substrat comportant un conducteur coaxial
US4979016A (en) * 1988-05-16 1990-12-18 Dallas Semiconductor Corporation Split lead package
US5684332A (en) * 1994-05-27 1997-11-04 Advanced Semiconductor Engineering, Inc. Method of packaging a semiconductor device with minimum bonding pad pitch and packaged device therefrom

Also Published As

Publication number Publication date
JPH0524666B2 (enExample) 1993-04-08

Similar Documents

Publication Publication Date Title
KR100638755B1 (ko) 집적 회로 인터페이스용 필터 구조물
CA2175087C (en) Coplanar waveguide mounted flip chip
US6373348B1 (en) High speed differential attenuator using a low temperature co-fired ceramic substrate
JPS61205001A (ja) 伝送線路
JPS58182308A (ja) 高周波回路
CN111656467B (zh) 静电保护装置
US5046072A (en) Signal distribution system
JP6206625B1 (ja) フィルタ回路付き配線基板および電子機器
JPS59222949A (ja) 超高周波集積化電子回路装置
US20060138650A1 (en) Integrated circuit packaging device and method for matching impedance
JPH0522001A (ja) 伝送線路構造
US3723914A (en) Lumped constant quadrature coupler with improved parasitic suppression
CN116094536B (zh) 多通道射频芯片结构
JPH02284448A (ja) 半導体装置
JPS6077436A (ja) 半導体集積回路
JP3278093B2 (ja) 半導体デバイス
JP4112498B2 (ja) 信号中継装置
CN119890647B (zh) 宽频带同轴电缆巴伦装置
JP3462397B2 (ja) 高周波モジュール
JPS5942735Y2 (ja) 抵抗減衰器
TW200533935A (en) The testing apparatus and method of the high frequency probe
JPH0629226U (ja) 多芯通信線用高周波コモンモードノイズフィルタ
JP2005510066A (ja) マルチチップモジュール
JPH0457502A (ja) 高周波トランジスタの整合回路
JPS61182210A (ja) コンデンサ