JPS59200417A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59200417A
JPS59200417A JP7292383A JP7292383A JPS59200417A JP S59200417 A JPS59200417 A JP S59200417A JP 7292383 A JP7292383 A JP 7292383A JP 7292383 A JP7292383 A JP 7292383A JP S59200417 A JPS59200417 A JP S59200417A
Authority
JP
Japan
Prior art keywords
layer
melting point
high melting
silicon
point metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7292383A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0460335B2 (cg-RX-API-DMAC7.html
Inventor
Oku Kuraki
億 久良木
Hideo Oikawa
及川　秀男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP7292383A priority Critical patent/JPS59200417A/ja
Publication of JPS59200417A publication Critical patent/JPS59200417A/ja
Publication of JPH0460335B2 publication Critical patent/JPH0460335B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP7292383A 1983-04-27 1983-04-27 半導体装置の製造方法 Granted JPS59200417A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7292383A JPS59200417A (ja) 1983-04-27 1983-04-27 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7292383A JPS59200417A (ja) 1983-04-27 1983-04-27 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59200417A true JPS59200417A (ja) 1984-11-13
JPH0460335B2 JPH0460335B2 (cg-RX-API-DMAC7.html) 1992-09-25

Family

ID=13503354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7292383A Granted JPS59200417A (ja) 1983-04-27 1983-04-27 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59200417A (cg-RX-API-DMAC7.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62183114A (ja) * 1986-02-06 1987-08-11 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製法
JP2011501404A (ja) * 2007-10-12 2011-01-06 サン−ゴバン グラス フランス 酸化モリブデンで作られた電極を製造する方法
JP2024508787A (ja) * 2021-02-24 2024-02-28 アイメック・ヴェーゼットウェー モリブデンをエッチングする方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0216576A (ja) * 1988-07-05 1990-01-19 Brother Ind Ltd 画像形成装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0216576A (ja) * 1988-07-05 1990-01-19 Brother Ind Ltd 画像形成装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62183114A (ja) * 1986-02-06 1987-08-11 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製法
JP2011501404A (ja) * 2007-10-12 2011-01-06 サン−ゴバン グラス フランス 酸化モリブデンで作られた電極を製造する方法
JP2024508787A (ja) * 2021-02-24 2024-02-28 アイメック・ヴェーゼットウェー モリブデンをエッチングする方法

Also Published As

Publication number Publication date
JPH0460335B2 (cg-RX-API-DMAC7.html) 1992-09-25

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