JPS59198718A - 気相法による被膜作製方法 - Google Patents
気相法による被膜作製方法Info
- Publication number
- JPS59198718A JPS59198718A JP58072557A JP7255783A JPS59198718A JP S59198718 A JPS59198718 A JP S59198718A JP 58072557 A JP58072557 A JP 58072557A JP 7255783 A JP7255783 A JP 7255783A JP S59198718 A JPS59198718 A JP S59198718A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- photo
- reaction
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000005229 chemical vapour deposition Methods 0.000 title abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000006243 chemical reaction Methods 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 7
- 239000012808 vapor phase Substances 0.000 claims abstract 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 2
- 239000012071 phase Substances 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 abstract description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 19
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 18
- 229910000077 silane Inorganic materials 0.000 abstract description 13
- 239000007789 gas Substances 0.000 description 32
- 238000006552 photochemical reaction Methods 0.000 description 15
- 239000011521 glass Substances 0.000 description 8
- 239000010453 quartz Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000008313 sensitization Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 102100033806 Alpha-protein kinase 3 Human genes 0.000 description 1
- 101710082399 Alpha-protein kinase 3 Proteins 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 101150063297 MYO1 gene Proteins 0.000 description 1
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- SYHGEUNFJIGTRX-UHFFFAOYSA-N methylenedioxypyrovalerone Chemical compound C=1C=C2OCOC2=CC=1C(=O)C(CCC)N1CCCC1 SYHGEUNFJIGTRX-UHFFFAOYSA-N 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 238000001782 photodegradation Methods 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Laminated Bodies (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58072557A JPS59198718A (ja) | 1983-04-25 | 1983-04-25 | 気相法による被膜作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58072557A JPS59198718A (ja) | 1983-04-25 | 1983-04-25 | 気相法による被膜作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29547189A Division JPH0660405B2 (ja) | 1989-11-13 | 1989-11-13 | 気相法による被膜作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59198718A true JPS59198718A (ja) | 1984-11-10 |
| JPH0557731B2 JPH0557731B2 (enrdf_load_stackoverflow) | 1993-08-24 |
Family
ID=13492770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58072557A Granted JPS59198718A (ja) | 1983-04-25 | 1983-04-25 | 気相法による被膜作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59198718A (enrdf_load_stackoverflow) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61127121A (ja) * | 1984-11-26 | 1986-06-14 | Semiconductor Energy Lab Co Ltd | 薄膜形成方法 |
| JPS61152026A (ja) * | 1984-12-25 | 1986-07-10 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
| JPS61152024A (ja) * | 1984-12-25 | 1986-07-10 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
| JPS61159772A (ja) * | 1985-01-07 | 1986-07-19 | Semiconductor Energy Lab Co Ltd | 光電変換装置作製方法 |
| JPS6216511A (ja) * | 1985-07-15 | 1987-01-24 | Mitsui Toatsu Chem Inc | 半導体薄膜の製造方法 |
| JPS6223105A (ja) * | 1985-07-24 | 1987-01-31 | Mitsui Toatsu Chem Inc | 半導体薄膜の製膜方法 |
| JPS62224923A (ja) * | 1986-03-27 | 1987-10-02 | Anelva Corp | 半導体薄膜の作製方法及び装置 |
| JPS63155682A (ja) * | 1986-12-18 | 1988-06-28 | Sanyo Electric Co Ltd | 光起電力装置 |
| JPH02500397A (ja) * | 1987-07-07 | 1990-02-08 | モービル・ソラー・エナージー・コーポレーション | 反射防止被膜を有する太陽電池の製造方法 |
| WO1990007390A1 (en) * | 1988-12-27 | 1990-07-12 | Symetrix Corporation | Methods and apparatus for material deposition |
| JPH08321496A (ja) * | 1996-05-07 | 1996-12-03 | Semiconductor Energy Lab Co Ltd | 被膜作製方法 |
| US5962085A (en) * | 1991-02-25 | 1999-10-05 | Symetrix Corporation | Misted precursor deposition apparatus and method with improved mist and mist flow |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0727038U (ja) * | 1993-10-25 | 1995-05-19 | 大同ほくさん株式会社 | 浴室用電気機器のエアスイッチ機構 |
-
1983
- 1983-04-25 JP JP58072557A patent/JPS59198718A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| JAPAN.J.APPL.PHYS=1983 * |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6984595B1 (en) | 1984-11-26 | 2006-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Layer member forming method |
| JPS61127121A (ja) * | 1984-11-26 | 1986-06-14 | Semiconductor Energy Lab Co Ltd | 薄膜形成方法 |
| JPS61152026A (ja) * | 1984-12-25 | 1986-07-10 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
| JPS61152024A (ja) * | 1984-12-25 | 1986-07-10 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
| JPS61159772A (ja) * | 1985-01-07 | 1986-07-19 | Semiconductor Energy Lab Co Ltd | 光電変換装置作製方法 |
| JPS6216511A (ja) * | 1985-07-15 | 1987-01-24 | Mitsui Toatsu Chem Inc | 半導体薄膜の製造方法 |
| JPS6223105A (ja) * | 1985-07-24 | 1987-01-31 | Mitsui Toatsu Chem Inc | 半導体薄膜の製膜方法 |
| JPS62224923A (ja) * | 1986-03-27 | 1987-10-02 | Anelva Corp | 半導体薄膜の作製方法及び装置 |
| JPS63155682A (ja) * | 1986-12-18 | 1988-06-28 | Sanyo Electric Co Ltd | 光起電力装置 |
| JPH02500397A (ja) * | 1987-07-07 | 1990-02-08 | モービル・ソラー・エナージー・コーポレーション | 反射防止被膜を有する太陽電池の製造方法 |
| WO1990007390A1 (en) * | 1988-12-27 | 1990-07-12 | Symetrix Corporation | Methods and apparatus for material deposition |
| US5962085A (en) * | 1991-02-25 | 1999-10-05 | Symetrix Corporation | Misted precursor deposition apparatus and method with improved mist and mist flow |
| JPH08321496A (ja) * | 1996-05-07 | 1996-12-03 | Semiconductor Energy Lab Co Ltd | 被膜作製方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0557731B2 (enrdf_load_stackoverflow) | 1993-08-24 |
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