JPS59194476A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59194476A
JPS59194476A JP58068549A JP6854983A JPS59194476A JP S59194476 A JPS59194476 A JP S59194476A JP 58068549 A JP58068549 A JP 58068549A JP 6854983 A JP6854983 A JP 6854983A JP S59194476 A JPS59194476 A JP S59194476A
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
region
insulating film
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58068549A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6329420B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Yasuro Mitsui
三井　康郎
Kazuo Nishitani
西谷　和雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58068549A priority Critical patent/JPS59194476A/ja
Publication of JPS59194476A publication Critical patent/JPS59194476A/ja
Publication of JPS6329420B2 publication Critical patent/JPS6329420B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP58068549A 1983-04-18 1983-04-18 半導体装置の製造方法 Granted JPS59194476A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58068549A JPS59194476A (ja) 1983-04-18 1983-04-18 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58068549A JPS59194476A (ja) 1983-04-18 1983-04-18 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59194476A true JPS59194476A (ja) 1984-11-05
JPS6329420B2 JPS6329420B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-06-14

Family

ID=13376945

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58068549A Granted JPS59194476A (ja) 1983-04-18 1983-04-18 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59194476A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6292377A (ja) * 1985-10-18 1987-04-27 Hitachi Ltd 電界効果トランジスタの製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04264445A (ja) * 1991-02-19 1992-09-21 Brother Ind Ltd 画像形成装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6292377A (ja) * 1985-10-18 1987-04-27 Hitachi Ltd 電界効果トランジスタの製造方法

Also Published As

Publication number Publication date
JPS6329420B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-06-14

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