JPS59191348A - 半導体集積回路 - Google Patents

半導体集積回路

Info

Publication number
JPS59191348A
JPS59191348A JP58066560A JP6656083A JPS59191348A JP S59191348 A JPS59191348 A JP S59191348A JP 58066560 A JP58066560 A JP 58066560A JP 6656083 A JP6656083 A JP 6656083A JP S59191348 A JPS59191348 A JP S59191348A
Authority
JP
Japan
Prior art keywords
region
type
island
epitaxial layer
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58066560A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0337739B2 (enExample
Inventor
Tetsuo Asano
哲郎 浅野
Teruo Tabata
田端　輝夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP58066560A priority Critical patent/JPS59191348A/ja
Publication of JPS59191348A publication Critical patent/JPS59191348A/ja
Publication of JPH0337739B2 publication Critical patent/JPH0337739B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions

Landscapes

  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP58066560A 1983-04-14 1983-04-14 半導体集積回路 Granted JPS59191348A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58066560A JPS59191348A (ja) 1983-04-14 1983-04-14 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58066560A JPS59191348A (ja) 1983-04-14 1983-04-14 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS59191348A true JPS59191348A (ja) 1984-10-30
JPH0337739B2 JPH0337739B2 (enExample) 1991-06-06

Family

ID=13319436

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58066560A Granted JPS59191348A (ja) 1983-04-14 1983-04-14 半導体集積回路

Country Status (1)

Country Link
JP (1) JPS59191348A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01146352A (ja) * 1987-10-30 1989-06-08 Sgs Thomson Microelettronica Spa 能動及び受動素子を絶縁ポケット内に含み、各素子とそれを含むポケットの間での破壊電圧よりも高い電圧において動作する集積構造

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57100743A (en) * 1980-12-16 1982-06-23 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57100743A (en) * 1980-12-16 1982-06-23 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01146352A (ja) * 1987-10-30 1989-06-08 Sgs Thomson Microelettronica Spa 能動及び受動素子を絶縁ポケット内に含み、各素子とそれを含むポケットの間での破壊電圧よりも高い電圧において動作する集積構造

Also Published As

Publication number Publication date
JPH0337739B2 (enExample) 1991-06-06

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