JPS59189669A - 化合物半導体オ−ム性接触電極およびその製造方法 - Google Patents

化合物半導体オ−ム性接触電極およびその製造方法

Info

Publication number
JPS59189669A
JPS59189669A JP58063672A JP6367283A JPS59189669A JP S59189669 A JPS59189669 A JP S59189669A JP 58063672 A JP58063672 A JP 58063672A JP 6367283 A JP6367283 A JP 6367283A JP S59189669 A JPS59189669 A JP S59189669A
Authority
JP
Japan
Prior art keywords
layer
ohmic contact
type
alloy
contact electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58063672A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0224384B2 (enExample
Inventor
Eiji Murata
英治 村田
Hisao Kamo
加茂　久夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58063672A priority Critical patent/JPS59189669A/ja
Publication of JPS59189669A publication Critical patent/JPS59189669A/ja
Publication of JPH0224384B2 publication Critical patent/JPH0224384B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP58063672A 1983-04-13 1983-04-13 化合物半導体オ−ム性接触電極およびその製造方法 Granted JPS59189669A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58063672A JPS59189669A (ja) 1983-04-13 1983-04-13 化合物半導体オ−ム性接触電極およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58063672A JPS59189669A (ja) 1983-04-13 1983-04-13 化合物半導体オ−ム性接触電極およびその製造方法

Publications (2)

Publication Number Publication Date
JPS59189669A true JPS59189669A (ja) 1984-10-27
JPH0224384B2 JPH0224384B2 (enExample) 1990-05-29

Family

ID=13236076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58063672A Granted JPS59189669A (ja) 1983-04-13 1983-04-13 化合物半導体オ−ム性接触電極およびその製造方法

Country Status (1)

Country Link
JP (1) JPS59189669A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03219674A (ja) * 1990-01-25 1991-09-27 Toshiba Corp 半導体装置の電極構造及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03219674A (ja) * 1990-01-25 1991-09-27 Toshiba Corp 半導体装置の電極構造及びその製造方法

Also Published As

Publication number Publication date
JPH0224384B2 (enExample) 1990-05-29

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