JPS59186200A - オン・チツプ高電圧電力供給装置 - Google Patents
オン・チツプ高電圧電力供給装置Info
- Publication number
- JPS59186200A JPS59186200A JP59042246A JP4224684A JPS59186200A JP S59186200 A JPS59186200 A JP S59186200A JP 59042246 A JP59042246 A JP 59042246A JP 4224684 A JP4224684 A JP 4224684A JP S59186200 A JPS59186200 A JP S59186200A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- circuit
- charge pump
- output
- high voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Read Only Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/481,682 US4481566A (en) | 1983-04-04 | 1983-04-04 | On chip charge trap compensated high voltage converter |
| US481682 | 1995-06-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59186200A true JPS59186200A (ja) | 1984-10-22 |
| JPS6255238B2 JPS6255238B2 (enExample) | 1987-11-18 |
Family
ID=23912947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59042246A Granted JPS59186200A (ja) | 1983-04-04 | 1984-03-07 | オン・チツプ高電圧電力供給装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4481566A (enExample) |
| EP (1) | EP0123831B1 (enExample) |
| JP (1) | JPS59186200A (enExample) |
| DE (1) | DE3479362D1 (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6340897U (enExample) * | 1986-09-03 | 1988-03-17 | ||
| JPS63501106A (ja) * | 1985-04-12 | 1988-04-21 | エスジェーエス―トムソン ミクロエレクトロニクス ソシエテ アノニム | 電気的にプログラム可能な読出し専用メモリ |
| JPH04132088A (ja) * | 1990-09-25 | 1992-05-06 | Samsung Electron Co Ltd | 半導体メモリ素子の高電圧発生回路 |
| JPH07326194A (ja) * | 1993-12-28 | 1995-12-12 | Sgs Thomson Microelettronica Spa | 不揮発性メモリ用電圧ブースタ |
| JP2006236511A (ja) * | 2005-02-25 | 2006-09-07 | Toshiba Corp | 半導体集積回路装置 |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4752699A (en) * | 1986-12-19 | 1988-06-21 | International Business Machines Corp. | On chip multiple voltage generation using a charge pump and plural feedback sense circuits |
| NL8702734A (nl) * | 1987-11-17 | 1989-06-16 | Philips Nv | Spanningsvermenigvuldigschakeling en gelijkrichtelement. |
| NL8800287A (nl) * | 1988-02-08 | 1989-09-01 | Philips Nv | Geheugenschakeling met een uitwisbaar programmeerbaar geheugen, generator voor het opwekken van een programmeerspanning voor het geheugen, spanningsregelaar en flankregelaar, beide geschikt voor toepassing in de generator, en een diode-element. |
| TW229341B (enExample) * | 1992-06-22 | 1994-09-01 | Advanced Micro Devices Inc | |
| JP2806717B2 (ja) * | 1992-10-28 | 1998-09-30 | 日本電気アイシーマイコンシステム株式会社 | チャージポンプ回路 |
| US5414669A (en) * | 1993-09-10 | 1995-05-09 | Intel Corporation | Method and apparatus for programming and erasing flash EEPROM memory arrays utilizing a charge pump circuit |
| US5666045A (en) * | 1994-12-09 | 1997-09-09 | Psc Inc. | Laser drive and control systems useful for laser diode protection |
| US5680300A (en) * | 1995-12-22 | 1997-10-21 | Analog Devices, Inc. | Regulated charge pump DC/DC converter |
| US6055186A (en) * | 1998-10-23 | 2000-04-25 | Macronix International Co., Ltd. | Regulated negative voltage supply circuit for floating gate memory devices |
| US6510394B2 (en) * | 2001-02-02 | 2003-01-21 | Texas Instruments Incorporated | Charge pump with switched capacitor feedback |
| US7161409B2 (en) * | 2004-07-26 | 2007-01-09 | Honeywell International Inc. | Precision, low drift, closed loop voltage reference |
| US7372318B2 (en) * | 2004-07-26 | 2008-05-13 | Honeywell International Inc. | Precision, low drift, stacked voltage reference |
| US8274176B2 (en) * | 2007-07-13 | 2012-09-25 | Samsung Electronics Co., Ltd. | Power supply apparatus |
| US8350407B2 (en) | 2007-07-13 | 2013-01-08 | Samsung Electronics Co., Ltd. | High voltage power supply apparatus |
| US8049551B2 (en) * | 2008-06-17 | 2011-11-01 | Monolithic Power Systems, Inc. | Charge pump for switched capacitor circuits with slew-rate control of in-rush current |
| EP2337200B1 (en) | 2009-12-18 | 2014-04-09 | Nxp B.V. | A sub-stage for a charge pump |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5393350A (en) * | 1977-01-27 | 1978-08-16 | Canon Inc | Booster circuit |
| US4281377A (en) * | 1978-06-21 | 1981-07-28 | Lucas Industries Limited | Power supply circuits |
| FR2437734A1 (fr) * | 1978-09-26 | 1980-04-25 | Thomson Csf | Amplificateur a capacites commutees, filtre a capacites commutees et filtre a transfert de charges comportant un tel amplificateur |
| NL8004852A (nl) * | 1979-08-31 | 1981-03-03 | Xicor Inc | Geintegreerde, in stijgtijd geregelde, spanning- generatorstelsels. |
| US4302804A (en) * | 1979-09-04 | 1981-11-24 | Burroughs Corporation | DC Voltage multiplier using phase-sequenced CMOS switches |
| US4321661A (en) * | 1980-12-23 | 1982-03-23 | Gte Laboratories Incorporated | Apparatus for charging a capacitor |
-
1983
- 1983-04-04 US US06/481,682 patent/US4481566A/en not_active Expired - Lifetime
-
1984
- 1984-03-05 EP EP84102329A patent/EP0123831B1/en not_active Expired
- 1984-03-05 DE DE8484102329T patent/DE3479362D1/de not_active Expired
- 1984-03-07 JP JP59042246A patent/JPS59186200A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63501106A (ja) * | 1985-04-12 | 1988-04-21 | エスジェーエス―トムソン ミクロエレクトロニクス ソシエテ アノニム | 電気的にプログラム可能な読出し専用メモリ |
| JPS6340897U (enExample) * | 1986-09-03 | 1988-03-17 | ||
| JPH04132088A (ja) * | 1990-09-25 | 1992-05-06 | Samsung Electron Co Ltd | 半導体メモリ素子の高電圧発生回路 |
| JPH07326194A (ja) * | 1993-12-28 | 1995-12-12 | Sgs Thomson Microelettronica Spa | 不揮発性メモリ用電圧ブースタ |
| JP2006236511A (ja) * | 2005-02-25 | 2006-09-07 | Toshiba Corp | 半導体集積回路装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0123831A2 (en) | 1984-11-07 |
| US4481566A (en) | 1984-11-06 |
| JPS6255238B2 (enExample) | 1987-11-18 |
| EP0123831A3 (en) | 1986-02-05 |
| EP0123831B1 (en) | 1989-08-09 |
| DE3479362D1 (en) | 1989-09-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6255238B2 (enExample) | ||
| EP1134879B1 (en) | Semiconductor booster circuit | |
| US6829170B2 (en) | Method of controlling an electronic non-volatile memory and associated device | |
| US4321661A (en) | Apparatus for charging a capacitor | |
| US6661278B1 (en) | High voltage charge pump circuit | |
| US4365172A (en) | High current static MOS driver circuit with low DC power dissipation | |
| JPH0897376A (ja) | 静電放電対策用保護回路 | |
| US4595999A (en) | Non-volatile random access memory cell with CMOS transistors having a common floating grid | |
| US6859088B2 (en) | Ferroelectric element and a ferroelectric gate device using the same | |
| JP2573574B2 (ja) | 出力バッファ回路 | |
| EP0068892B1 (en) | Inverter circuit | |
| US4150304A (en) | CCD Comparator | |
| US3908182A (en) | Non-volatile memory cell | |
| EP0302779A2 (en) | Non-volatile shadow storage cell with improved level shifting circuit and reduced tunnel device count for improved reliability | |
| US4501007A (en) | CCD differentiator | |
| JP2676807B2 (ja) | 電源容量回路 | |
| JP3890614B2 (ja) | 昇圧電圧供給回路 | |
| JPH0227893B2 (enExample) | ||
| JP2549104B2 (ja) | 半導体装置 | |
| JPS5931893B2 (ja) | 半導体集積回路 | |
| EP0851562B1 (en) | High voltage charge pump, particularly for flash EEPROM memories | |
| JPH05128872A (ja) | 半導体出力回路 | |
| KR920005484A (ko) | Eeprom 아날로그 스위치 | |
| JPH06224439A (ja) | 不揮発性半導体記憶装置 | |
| JPS60254650A (ja) | 半導体集積回路 |