JPS59184791A - ダイヤモンドの気相合成法 - Google Patents

ダイヤモンドの気相合成法

Info

Publication number
JPS59184791A
JPS59184791A JP58057043A JP5704383A JPS59184791A JP S59184791 A JPS59184791 A JP S59184791A JP 58057043 A JP58057043 A JP 58057043A JP 5704383 A JP5704383 A JP 5704383A JP S59184791 A JPS59184791 A JP S59184791A
Authority
JP
Japan
Prior art keywords
diffusion layer
diamond
filament
surface diffusion
phase synthesis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58057043A
Other languages
English (en)
Japanese (ja)
Other versions
JPS631280B2 (enrdf_load_stackoverflow
Inventor
Noribumi Kikuchi
菊池　則文
Takayuki Shingyouchi
新行内　隆之
Hiroaki Yamashita
山下　博明
Akio Nishiyama
昭雄 西山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP58057043A priority Critical patent/JPS59184791A/ja
Publication of JPS59184791A publication Critical patent/JPS59184791A/ja
Publication of JPS631280B2 publication Critical patent/JPS631280B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP58057043A 1983-04-01 1983-04-01 ダイヤモンドの気相合成法 Granted JPS59184791A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58057043A JPS59184791A (ja) 1983-04-01 1983-04-01 ダイヤモンドの気相合成法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58057043A JPS59184791A (ja) 1983-04-01 1983-04-01 ダイヤモンドの気相合成法

Publications (2)

Publication Number Publication Date
JPS59184791A true JPS59184791A (ja) 1984-10-20
JPS631280B2 JPS631280B2 (enrdf_load_stackoverflow) 1988-01-12

Family

ID=13044413

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58057043A Granted JPS59184791A (ja) 1983-04-01 1983-04-01 ダイヤモンドの気相合成法

Country Status (1)

Country Link
JP (1) JPS59184791A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61101493A (ja) * 1984-10-23 1986-05-20 ジヨ−ジ　ガ−ゲリ−　マ−クル 立方体炭素
JPS61106494A (ja) * 1984-10-29 1986-05-24 Kyocera Corp ダイヤモンド被膜部材及びその製法
US4925701A (en) * 1988-05-27 1990-05-15 Xerox Corporation Processes for the preparation of polycrystalline diamond films
FR2790267A1 (fr) * 1999-02-25 2000-09-01 Suisse Electronique Microtech Procede de depot d'une couche de diamant sur un metal refractaire de transition et piece revetue d' une telle couche
CN112195369A (zh) * 2020-11-06 2021-01-08 西安稀有金属材料研究院有限公司 一种耐腐蚀的高强度中子屏蔽合金材料及其制备方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61101493A (ja) * 1984-10-23 1986-05-20 ジヨ−ジ　ガ−ゲリ−　マ−クル 立方体炭素
JPS61106494A (ja) * 1984-10-29 1986-05-24 Kyocera Corp ダイヤモンド被膜部材及びその製法
US4925701A (en) * 1988-05-27 1990-05-15 Xerox Corporation Processes for the preparation of polycrystalline diamond films
FR2790267A1 (fr) * 1999-02-25 2000-09-01 Suisse Electronique Microtech Procede de depot d'une couche de diamant sur un metal refractaire de transition et piece revetue d' une telle couche
CN112195369A (zh) * 2020-11-06 2021-01-08 西安稀有金属材料研究院有限公司 一种耐腐蚀的高强度中子屏蔽合金材料及其制备方法

Also Published As

Publication number Publication date
JPS631280B2 (enrdf_load_stackoverflow) 1988-01-12

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