JPS59182577A - 太陽電池用シリコンウエハの製造方法 - Google Patents

太陽電池用シリコンウエハの製造方法

Info

Publication number
JPS59182577A
JPS59182577A JP58056595A JP5659583A JPS59182577A JP S59182577 A JPS59182577 A JP S59182577A JP 58056595 A JP58056595 A JP 58056595A JP 5659583 A JP5659583 A JP 5659583A JP S59182577 A JPS59182577 A JP S59182577A
Authority
JP
Japan
Prior art keywords
layer
paste
silicon wafer
solar cells
impurity diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58056595A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0362031B2 (enrdf_load_stackoverflow
Inventor
Yuuji Tawara
裕滋 田原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoxan Corp
Hokusan Co Ltd
Original Assignee
Hoxan Corp
Hokusan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoxan Corp, Hokusan Co Ltd filed Critical Hoxan Corp
Priority to JP58056595A priority Critical patent/JPS59182577A/ja
Publication of JPS59182577A publication Critical patent/JPS59182577A/ja
Publication of JPH0362031B2 publication Critical patent/JPH0362031B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
JP58056595A 1983-03-31 1983-03-31 太陽電池用シリコンウエハの製造方法 Granted JPS59182577A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58056595A JPS59182577A (ja) 1983-03-31 1983-03-31 太陽電池用シリコンウエハの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58056595A JPS59182577A (ja) 1983-03-31 1983-03-31 太陽電池用シリコンウエハの製造方法

Publications (2)

Publication Number Publication Date
JPS59182577A true JPS59182577A (ja) 1984-10-17
JPH0362031B2 JPH0362031B2 (enrdf_load_stackoverflow) 1991-09-24

Family

ID=13031551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58056595A Granted JPS59182577A (ja) 1983-03-31 1983-03-31 太陽電池用シリコンウエハの製造方法

Country Status (1)

Country Link
JP (1) JPS59182577A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0233980A (ja) * 1988-07-22 1990-02-05 Sharp Corp 太陽電池の製造方法
WO2001084639A1 (de) * 2000-05-03 2001-11-08 Universität Konstanz Verfahren zur herstellung einer solarzelle und nach diesem verfahren hergestellte solarzelle
EP1321446A1 (de) 2001-12-20 2003-06-25 RWE Solar GmbH Verfahren zum Ausbilden einer Schichtstruktur auf einem Substrat
JP2013168678A (ja) * 2012-01-10 2013-08-29 Hitachi Chemical Co Ltd マスク形成用組成物、太陽電池用基板の製造方法および太陽電池素子の製造方法
JP2013168677A (ja) * 2012-01-10 2013-08-29 Hitachi Chemical Co Ltd マスク形成用組成物、太陽電池用基板の製造方法および太陽電池素子の製造方法
JP2014112636A (ja) * 2012-01-10 2014-06-19 Hitachi Chemical Co Ltd バリア層形成用組成物、太陽電池用基板の製造方法及び太陽電池素子の製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0233980A (ja) * 1988-07-22 1990-02-05 Sharp Corp 太陽電池の製造方法
WO2001084639A1 (de) * 2000-05-03 2001-11-08 Universität Konstanz Verfahren zur herstellung einer solarzelle und nach diesem verfahren hergestellte solarzelle
US7179987B2 (en) 2000-05-03 2007-02-20 Universitat Konstanz Solar cell and method for making
EP1321446A1 (de) 2001-12-20 2003-06-25 RWE Solar GmbH Verfahren zum Ausbilden einer Schichtstruktur auf einem Substrat
JP2013168678A (ja) * 2012-01-10 2013-08-29 Hitachi Chemical Co Ltd マスク形成用組成物、太陽電池用基板の製造方法および太陽電池素子の製造方法
JP2013168677A (ja) * 2012-01-10 2013-08-29 Hitachi Chemical Co Ltd マスク形成用組成物、太陽電池用基板の製造方法および太陽電池素子の製造方法
JP2013219372A (ja) * 2012-01-10 2013-10-24 Hitachi Chemical Co Ltd バリア層形成用組成物、バリア層、太陽電池用基板の製造方法及び太陽電池素子の製造方法
JP2014112636A (ja) * 2012-01-10 2014-06-19 Hitachi Chemical Co Ltd バリア層形成用組成物、太陽電池用基板の製造方法及び太陽電池素子の製造方法

Also Published As

Publication number Publication date
JPH0362031B2 (enrdf_load_stackoverflow) 1991-09-24

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