JPS5918193A - 液相エピタキシヤル成長用装置及びそれを使用した液相エピタキシヤル成長法 - Google Patents

液相エピタキシヤル成長用装置及びそれを使用した液相エピタキシヤル成長法

Info

Publication number
JPS5918193A
JPS5918193A JP12471382A JP12471382A JPS5918193A JP S5918193 A JPS5918193 A JP S5918193A JP 12471382 A JP12471382 A JP 12471382A JP 12471382 A JP12471382 A JP 12471382A JP S5918193 A JPS5918193 A JP S5918193A
Authority
JP
Japan
Prior art keywords
melt
sliding plate
substrate
layer
melt holding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12471382A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0224798B2 (enrdf_load_stackoverflow
Inventor
Susumu Kondo
進 近藤
Haruo Nagai
治男 永井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP12471382A priority Critical patent/JPS5918193A/ja
Publication of JPS5918193A publication Critical patent/JPS5918193A/ja
Publication of JPH0224798B2 publication Critical patent/JPH0224798B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP12471382A 1982-07-17 1982-07-17 液相エピタキシヤル成長用装置及びそれを使用した液相エピタキシヤル成長法 Granted JPS5918193A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12471382A JPS5918193A (ja) 1982-07-17 1982-07-17 液相エピタキシヤル成長用装置及びそれを使用した液相エピタキシヤル成長法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12471382A JPS5918193A (ja) 1982-07-17 1982-07-17 液相エピタキシヤル成長用装置及びそれを使用した液相エピタキシヤル成長法

Publications (2)

Publication Number Publication Date
JPS5918193A true JPS5918193A (ja) 1984-01-30
JPH0224798B2 JPH0224798B2 (enrdf_load_stackoverflow) 1990-05-30

Family

ID=14892260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12471382A Granted JPS5918193A (ja) 1982-07-17 1982-07-17 液相エピタキシヤル成長用装置及びそれを使用した液相エピタキシヤル成長法

Country Status (1)

Country Link
JP (1) JPS5918193A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5482555A (en) * 1991-05-16 1996-01-09 Samsung Electronics Co., Ltd. Liquid-phase epitaxy growth system and method for growing epitaxial layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5482555A (en) * 1991-05-16 1996-01-09 Samsung Electronics Co., Ltd. Liquid-phase epitaxy growth system and method for growing epitaxial layer

Also Published As

Publication number Publication date
JPH0224798B2 (enrdf_load_stackoverflow) 1990-05-30

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