JPH041496B2 - - Google Patents
Info
- Publication number
- JPH041496B2 JPH041496B2 JP20656481A JP20656481A JPH041496B2 JP H041496 B2 JPH041496 B2 JP H041496B2 JP 20656481 A JP20656481 A JP 20656481A JP 20656481 A JP20656481 A JP 20656481A JP H041496 B2 JPH041496 B2 JP H041496B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- inp
- growth
- gaxasyp
- gaxas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007791 liquid phase Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 13
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 20
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 16
- 239000013078 crystal Substances 0.000 description 13
- 230000031700 light absorption Effects 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 230000002159 abnormal effect Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56206564A JPS58107629A (ja) | 1981-12-21 | 1981-12-21 | 液相エピタキシヤル成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56206564A JPS58107629A (ja) | 1981-12-21 | 1981-12-21 | 液相エピタキシヤル成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58107629A JPS58107629A (ja) | 1983-06-27 |
| JPH041496B2 true JPH041496B2 (enrdf_load_stackoverflow) | 1992-01-13 |
Family
ID=16525476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56206564A Granted JPS58107629A (ja) | 1981-12-21 | 1981-12-21 | 液相エピタキシヤル成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58107629A (enrdf_load_stackoverflow) |
-
1981
- 1981-12-21 JP JP56206564A patent/JPS58107629A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58107629A (ja) | 1983-06-27 |
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