JPS58107629A - 液相エピタキシヤル成長方法 - Google Patents

液相エピタキシヤル成長方法

Info

Publication number
JPS58107629A
JPS58107629A JP56206564A JP20656481A JPS58107629A JP S58107629 A JPS58107629 A JP S58107629A JP 56206564 A JP56206564 A JP 56206564A JP 20656481 A JP20656481 A JP 20656481A JP S58107629 A JPS58107629 A JP S58107629A
Authority
JP
Japan
Prior art keywords
layer
growth
inp
epitaxial growth
liquid phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56206564A
Other languages
English (en)
Japanese (ja)
Other versions
JPH041496B2 (enrdf_load_stackoverflow
Inventor
Kenshin Taguchi
田口 剣申
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56206564A priority Critical patent/JPS58107629A/ja
Publication of JPS58107629A publication Critical patent/JPS58107629A/ja
Publication of JPH041496B2 publication Critical patent/JPH041496B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/40AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/02Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP56206564A 1981-12-21 1981-12-21 液相エピタキシヤル成長方法 Granted JPS58107629A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56206564A JPS58107629A (ja) 1981-12-21 1981-12-21 液相エピタキシヤル成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56206564A JPS58107629A (ja) 1981-12-21 1981-12-21 液相エピタキシヤル成長方法

Publications (2)

Publication Number Publication Date
JPS58107629A true JPS58107629A (ja) 1983-06-27
JPH041496B2 JPH041496B2 (enrdf_load_stackoverflow) 1992-01-13

Family

ID=16525476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56206564A Granted JPS58107629A (ja) 1981-12-21 1981-12-21 液相エピタキシヤル成長方法

Country Status (1)

Country Link
JP (1) JPS58107629A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH041496B2 (enrdf_load_stackoverflow) 1992-01-13

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