IE35057L - Growing multilayer semiconductor crystals - Google Patents

Growing multilayer semiconductor crystals

Info

Publication number
IE35057L
IE35057L IE710446A IE44671A IE35057L IE 35057 L IE35057 L IE 35057L IE 710446 A IE710446 A IE 710446A IE 44671 A IE44671 A IE 44671A IE 35057 L IE35057 L IE 35057L
Authority
IE
Ireland
Prior art keywords
solution
dissolved
gaas
iii
solutions
Prior art date
Application number
IE710446A
Other versions
IE35057B1 (en
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IE35057L publication Critical patent/IE35057L/en
Publication of IE35057B1 publication Critical patent/IE35057B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1332942 Semi-conductor devices WESTERN ELECTRIC CO Inc 19 April 1971 [14 April 1970] 26731/71 Heading H1K First, second and third epitaxial layers are grown on a seed of a III-V compound material by successively applying a first solution comprising a first and a second group III element in which the III-V compound is dissolved, a second solution comprising the first group III element in the III-V compound is dissolved, and a third solution comprising the first and second group III elements in which the III-V compound is dissolved, the first and third epitaxial layers having wide band gaps and the second epitaxial layer having narrow band gaps. If the second solution also contains the second group III element it must be in a smaller concentration than in the first and third solutions. As shown, Fig. 1A, a seed crystal 19 of GaAs is mounted in a boat 14 within which is placed a solution holder 15 having recesses 16a, 16b, 16c containing solutions I, II and III respectively. The boat is provided with stops (25), 26 at opposite corners so that by appropriate tipping at predetermined temperatures in a cooling cycle each solution in turn is brought over the seed crystal. The floor of the boat 14 is provided with grooves 18 which remove scum from the solutions when the holder is moved relative to the boat. The furnace is supported by a cradle 22 which has a viewing port 23 located above the seed crystal and this provides a temperature gradient in the solution such that the free surface is cooler than the surface from which the epitaxial layer is grown. This ensures that the solution precipitates to a greater degree on floating nuclei at the free surface to enable very thin layers to be grown on the seed. A thermocouple 21 is used to measure the temperature of the seed. Solution I comprises an excess of GaAs dissolved in Ga and Al and doped with Sn, Si, Te, the deposited layer being of N type having a wide band gap. Solution II comprises an excess of GaAs dissolved in Ga and doped with Si or Si and Zn preferably compensated, the deposited layer being of P-type GaAs having a narrow band gap. Solution III comprises an excess of GaAs dissolved in Ga and Al and doped with Zn, the deposited layer being of P-type Ga 1-y Al y As having a wide band gap. The resultant device may be utilized as a junction laser or as an optical waveguide. In an alternative apparatus, Fig. 3 (not shown), the solution holder has provision for four solutions and is moved over the seed crystal by means of a push rod. The viewing port is omitted and the temperature gradient in the solutions is obtained by an auxiliary heater positioned below the crystal support. The apparatus may be subjected to mechanical vibration during deposition. The fourth solution is utilized to deposit a layer of GaAs doped with Zn or Ge to facilitate the provision of ohmic contacts which may be produced by evaporation of Cr and Au. The resulting slices may be cut and cleaved to produce laser diodes. (From GB1332942 A) [FR2086052A1]
IE446/71A 1970-04-14 1971-04-08 Methods of growing multilayer semiconductor crystals IE35057B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2836570A 1970-04-14 1970-04-14

Publications (2)

Publication Number Publication Date
IE35057L true IE35057L (en) 1971-10-14
IE35057B1 IE35057B1 (en) 1975-10-29

Family

ID=21843047

Family Applications (1)

Application Number Title Priority Date Filing Date
IE446/71A IE35057B1 (en) 1970-04-14 1971-04-08 Methods of growing multilayer semiconductor crystals

Country Status (11)

Country Link
JP (1) JPS5118152B1 (en)
KR (1) KR780000760B1 (en)
BE (1) BE765553A (en)
CH (1) CH584061A5 (en)
DE (1) DE2117472B2 (en)
ES (1) ES390473A1 (en)
FR (1) FR2086052B1 (en)
GB (1) GB1332942A (en)
IE (1) IE35057B1 (en)
NL (1) NL159231B (en)
SE (1) SE362986B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112518153A (en) * 2020-11-12 2021-03-19 山东金成机械有限公司 Steel pipe unloading auxiliary device and steel pipe laser beam cutting machine that punches

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE443583B (en) * 1982-11-12 1986-03-03 Ericsson Telefon Ab L M APPARATUS OF LIQUID PHASE PITAXI

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112518153A (en) * 2020-11-12 2021-03-19 山东金成机械有限公司 Steel pipe unloading auxiliary device and steel pipe laser beam cutting machine that punches

Also Published As

Publication number Publication date
ES390473A1 (en) 1974-04-01
DE2117472A1 (en) 1971-10-28
SE362986B (en) 1973-12-27
DE2117472B2 (en) 1975-11-06
JPS5118152B1 (en) 1976-06-08
BE765553A (en) 1971-08-30
KR780000760B1 (en) 1978-12-30
FR2086052B1 (en) 1977-01-28
NL159231B (en) 1979-01-15
FR2086052A1 (en) 1971-12-31
IE35057B1 (en) 1975-10-29
CH584061A5 (en) 1977-01-31
NL7104888A (en) 1971-10-18
GB1332942A (en) 1973-10-10

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