JPS59181682A - 発光素子 - Google Patents

発光素子

Info

Publication number
JPS59181682A
JPS59181682A JP58056170A JP5617083A JPS59181682A JP S59181682 A JPS59181682 A JP S59181682A JP 58056170 A JP58056170 A JP 58056170A JP 5617083 A JP5617083 A JP 5617083A JP S59181682 A JPS59181682 A JP S59181682A
Authority
JP
Japan
Prior art keywords
light
light emitting
thin film
emitting layer
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58056170A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0160916B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Kukimoto
柊元　宏
Tatsuro Beppu
達郎 別府
Keijiro Hirahara
平原　奎治郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58056170A priority Critical patent/JPS59181682A/ja
Publication of JPS59181682A publication Critical patent/JPS59181682A/ja
Publication of JPH0160916B2 publication Critical patent/JPH0160916B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
JP58056170A 1983-03-31 1983-03-31 発光素子 Granted JPS59181682A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58056170A JPS59181682A (ja) 1983-03-31 1983-03-31 発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58056170A JPS59181682A (ja) 1983-03-31 1983-03-31 発光素子

Publications (2)

Publication Number Publication Date
JPS59181682A true JPS59181682A (ja) 1984-10-16
JPH0160916B2 JPH0160916B2 (enrdf_load_stackoverflow) 1989-12-26

Family

ID=13019620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58056170A Granted JPS59181682A (ja) 1983-03-31 1983-03-31 発光素子

Country Status (1)

Country Link
JP (1) JPS59181682A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61165993A (ja) * 1985-01-17 1986-07-26 株式会社小糸製作所 超薄膜半導体光学装置
JPH01225095A (ja) * 1988-03-04 1989-09-07 Komatsu Ltd 薄膜ｅｌ素子
JPH01239796A (ja) * 1988-03-22 1989-09-25 Komatsu Ltd 薄膜ｅｌ素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61165993A (ja) * 1985-01-17 1986-07-26 株式会社小糸製作所 超薄膜半導体光学装置
JPH01225095A (ja) * 1988-03-04 1989-09-07 Komatsu Ltd 薄膜ｅｌ素子
JPH01239796A (ja) * 1988-03-22 1989-09-25 Komatsu Ltd 薄膜ｅｌ素子

Also Published As

Publication number Publication date
JPH0160916B2 (enrdf_load_stackoverflow) 1989-12-26

Similar Documents

Publication Publication Date Title
EP0278757B1 (en) Electroluminescent device with improved cathode
US20090026926A1 (en) Transparent conductive film and dispersion-type electroluminescence device using said film
JPH086086B2 (ja) 白色エレクトロルミネツセンス素子
WO1983004123A1 (en) Electroluminescent display unit
JPS5823191A (ja) 薄膜ｅｌ素子
JPH03141588A (ja) 電界発光素子
JPS59181682A (ja) 発光素子
US6451460B1 (en) Thin film electroluminescent device
JPH02253593A (ja) 発光素子
JPH02251429A (ja) 透明導電性フィルム
JPS59181485A (ja) 発光素子
JPS5835587A (ja) 薄膜ｅｌ素子
US3143682A (en) Electroluminescent devices with a barium titanate layer
KR20090079810A (ko) 무기형광체
JP2715620B2 (ja) 複合発光体薄膜及び薄膜ｅｌ素子
JPS59149607A (ja) 透明電極
JP3016323B2 (ja) エレクトロルミネッセンス素子
JPH0123917B2 (enrdf_load_stackoverflow)
JPH0433120B2 (enrdf_load_stackoverflow)
JPS60100398A (ja) 薄膜発光素子
JPH01122594A (ja) 薄膜型エレクトロルミネッセンス素子
JPS58680B2 (ja) 電場発光板
JP2009170358A (ja) 無機ｅｌ素子
JPH03280395A (ja) 発光体薄膜および薄膜ｅｌ素子
JPS63231898A (ja) 薄膜ｅｌ素子