JPS59181682A - Light emitting element - Google Patents
Light emitting elementInfo
- Publication number
- JPS59181682A JPS59181682A JP58056170A JP5617083A JPS59181682A JP S59181682 A JPS59181682 A JP S59181682A JP 58056170 A JP58056170 A JP 58056170A JP 5617083 A JP5617083 A JP 5617083A JP S59181682 A JPS59181682 A JP S59181682A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- light
- emitting layer
- thin film
- amorphous semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of group II and group VI of the periodic system
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、ｎ−ｖｉ族化合物からなるアモルファス半導
体薄膜を用いた電場発光型の発光菓子に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an electroluminescent confectionery using an amorphous semiconductor thin film made of an n-vi group compound.
ｎ−■族化合物半導体であるＺｎＳ 、 Ｚｎ５ｅ 、
ＣｄＳ 。ZnS, Zn5e, which are n-■ group compound semiconductors,
CdS.
ＣｄＳｅ 、 ＺｎＴｅ 、 ＣｔｌＴｅは直接遷移型
のバンド構造をもち、発光中心となるドーパントを絵加
することにより優れた螢光体特性を不すことが知られて
いる。従来、これらの半導体拐料を用いた電場発光型発
光素子としては、これらの材料粒子を絶縁体材相中に懸
濁浮遊せしめ、これに電界を印加する構造がよく知られ
ている。しかしこの構造では、粒界不均一に基づく発光
特性の制御性の難しさから実用に耐え得るものが得られ
ていない。CdSe, ZnTe, and CtlTe have a direct transition type band structure, and it is known that excellent phosphor properties can be lost by adding a dopant that becomes a luminescent center. Conventionally, as an electroluminescent light emitting device using these semiconductor particles, a structure in which particles of these materials are suspended in an insulating material phase and an electric field is applied thereto is well known. However, with this structure, it has not been possible to obtain a structure that can withstand practical use due to the difficulty in controlling the light emission characteristics due to grain boundary non-uniformity.
一方、同様の半導体材料の薄膜を絶縁体で挾持して電場
発光型発光素子を構成する方法も知られている。その−
例を第１図に示す。これは例えはカラヌ基板１１に透明
電極１２を形成し、この上に透ＥｊＡ絶縁股１３を介し
てＭｎを添加したＺｎＳ薄膜１４を被着し、更にこの上
に絶縁膜１５を介して電極Ｚ６を形成したものである。On the other hand, a method is also known in which a thin film of a similar semiconductor material is sandwiched between insulators to construct an electroluminescent light emitting element. That-
An example is shown in FIG. For example, a transparent electrode 12 is formed on a Calanu substrate 11, a Mn-doped ZnS thin film 14 is deposited on this through a transparent EJA insulating layer 13, and an electrode Z6 is further applied on this through an insulating film 15. was formed.
３
しかしこの構造でも、パワー変換効率が１０台と低（，
２００Ｖ以上の高電圧を印加しなければならないことか
ら、−末だ実用に供されていない。3 However, even with this structure, the power conversion efficiency is low at 10 units (,
Since it is necessary to apply a high voltage of 200 V or more, it is hardly put to practical use.
本発明は上記の点に鑑みなされたもので、■−Ｖｌ族ア
モルファス手導体薄膜を用いて低電圧駆動で高輝度が得
られる構造とした発光素子を提供することを目的とする
。The present invention has been made in view of the above points, and an object of the present invention is to provide a light emitting element having a structure that uses a -Vl group amorphous conductive thin film and can achieve high brightness with low voltage driving.
本発明において目１、バンドギャップの異なるｎ −■
族アモルファス半導体薄膜を父互に積層して童子ウェル
を形成した発光層を用いる。即ち、県制帯ＩＩ＠ Ｅｌ
なる第１の１ｔ−Ｖｌ族アモルファス半導体薄膜を察ｔ
ｌｆｌＪ帯幅Ｌ（ただし” １＜ Ｅ２ ）なる第２の
■−■族アモルファス半導体薄膜で挾んだ構造を単位発
光ＲＦＪとし、これを第１の電極が形成された基板上に
一層または二層以上積層し、このＪＨ層された発光層表
面に第２の電極を設けて発光素子を構成する。In the present invention, item 1: n −■ with different band gaps
A light-emitting layer is used in which a doji well is formed by stacking group amorphous semiconductor thin films on each other. That is, prefectural belt II @ El
We observed the first 1t-Vl group amorphous semiconductor thin film.
A unit light-emitting RFJ has a structure sandwiched by a second ■-■ group amorphous semiconductor thin film having a band width L (where 1<E2), and this is formed in one or two layers on the substrate on which the first electrode is formed. The above layers are stacked, and a second electrode is provided on the surface of the JH-layered light-emitting layer to constitute a light-emitting element.
この場合、発光層には発光中心となるドーパントとして
例えは、Ａｇ 、Ｃｕ 、Ｔｂ 、Ｔｍ、Ｅｕ 、ｆｖ
ｌｎ 、Ａｔ、ハロゲン等の中から選ばれた一以上の元
素を添加ゴーる０またあ１、第２のアモルファス半導体
薄膜のＶ ｆｌｆ’Ｊ帯１ｈ； Ｅ、 、 Ｈ２の差は
Ｅ２−Ｅ、≧１００（１００（に選ぶことが好ましく、
膜厚は量子ウェルを構成するｈｌのアモルファス半導体
薄膜を３０〜５０Ａ１．（リア層となる第２のアモルフ
ァス半導体？、ｔ、 Ｉ＋泉を５０〜１００＾に選ぶこ
とが好ましまた、ＡＣ駆動型とするためには第ｒ、ｆａ
２の電極と発光層・の間に絶Ｒ膜を介在させ、Ｉ） Ｃ
駆動型と１′るためには第１１第２の電極を直接発光Ｊ
曽に接触させれはよい。In this case, the light-emitting layer contains dopants that serve as luminescent centers, such as Ag, Cu, Tb, Tm, Eu, fv.
Adding one or more elements selected from ln, At, halogen, etc. 0 or 1, V flf'J band 1h of the second amorphous semiconductor thin film; E, , the difference between H2 is E2-E, ≧100 (preferably selected as 100),
The film thickness of the hl amorphous semiconductor thin film constituting the quantum well is 30 to 50 A1. (It is preferable to select the second amorphous semiconductor ?, t, I+ spring which becomes the rear layer to be 50 to 100^, and in order to make it an AC drive type,
I) C
In order to use the drive type, the 11th and 2nd electrodes are directly emitted.
It is good to have contact with Zeng.
本発明によれは、発光層内に量子ウェルを構成すること
によって内部電界による電子増倍効果が強−され、従来
より低い印加電圧で実用上十分な輝度を翁する発光素子
が得られる。According to the present invention, by forming quantum wells in the light emitting layer, the electron multiplication effect due to the internal electric field is strengthened, and a light emitting device can be obtained which provides practically sufficient brightness with an applied voltage lower than that of the conventional device.
またアモルファス半導体薄膜は有機金属化合物の熱分解
を、ｆｕ用したＭＯＣＶＤ法により均一性よく形成する
ことができ、特に４１ ％ ＩＫ ２のアモルファス半
導体薄膜を交互に多層に積層した発光層を用いれは、発
光面内の輝度の均一性に優れた発光素子を実現すること
ができる。Furthermore, an amorphous semiconductor thin film can be formed with good uniformity by thermal decomposition of an organometallic compound using the MOCVD method using fu, and especially when a light emitting layer is used in which amorphous semiconductor thin films of 41% IK 2 are laminated in multiple layers alternately. A light emitting element with excellent uniformity of brightness within a light emitting surface can be realized.
本発明の一実施例の発光素子構造を裁２図に示す。この
例は基孜側を発光面とするもので、ガラス基板２１に第
１の電極としてＩ’ｌ’Ｏ等からなる透明電極２２を形
成し、この上ＫＹ２０８等の絶縁膜２３を介して発光層
２４を形成しも・る。FIG. 2 shows the structure of a light emitting device according to an embodiment of the present invention. In this example, the base side is the light emitting surface, and a transparent electrode 22 made of I'l'O or the like is formed as a first electrode on a glass substrate 21, and light is emitted through an insulating film 23 of KY208 or the like. A layer 24 may also be formed.
発光層２４は、第１の■−■族アモルファス半薄膜であ
るＺｎ５ｙＳｅ、、薄膜２４ａ□、２４ａ□、２４ａ３
で挾む形で交互に積層した構造と１よっている。The light emitting layer 24 is made of Zn5ySe, which is a first ■-■ group amorphous semi-thin film, thin films 24a□, 24a□, 24a3
It has a structure in which layers are alternately sandwiched in between.
発光層２４０表面には絶縁膜２５を介して第２０′屯極
である金属′電極２６を設けている。A metal' electrode 26, which is the 20'th electrode, is provided on the surface of the light emitting layer 240 with an insulating film 25 interposed therebetween.
発光層２４は、Ｚｎ （ＣＨｓ ）ｚとｌ−１２Ｓおよ
び）ｔ２Ｓｅの熱分解反応を用いたＭＯＣＶＤ法により
形成する０そしてＨ，Ｓと）（２Ｓｅ の流量比を制
御することにより、混晶比ｘ ｓ Ｙを、０（ｘ（０，
８、０，２＜Ｙ＜ １であってかつｘ＜ｙを満たすよう
に選び、Ｚｎ５ｘＳｅ 薄膜の禁制帯幅Ｅ１とＺｎ５
ｙＳｅ、 、薄膜 −Ｘ
の禁制帯幅Ｅ２の関係をＥ２Ｅ１≧ｔｏｏ（ｍｅＶＪと
なるように設定する。また板子ウェル部となるＺｎ５ｘ
Ｓｅ、 、 薄膜２４ ｂｌ、 ２４ ｂ、 の膜厚
を３０〜５０＾、バリア部となるＺｎ５ｙＳｅ、 、薄
膜２４ａ１．２４ ａ２ 、２４ ａ３の膜厚を５０〜
１００Ａにそれぞれ設定する。The light-emitting layer 24 is formed by MOCVD using a thermal decomposition reaction of Zn(CHs)z, l-12S, and x s Y, 0(x(0,
8, 0,2<Y<1 and x<y, and the forbidden band width E1 and Zn5 of the Zn5xSe thin film.
ySe, , the relationship between the forbidden band width E2 of the thin film -X is set so that E2E1≧too(meVJ).
The film thickness of Se, , 24 bl, 24 b, is 30 to 50^, and the film thickness of Zn5ySe, , 24 a1, 24 a2, 24 a3, which becomes the barrier part, is 50 to 50
Set each to 100A.
このように構成された発光素子は、第１図に示した従来
構造のものに比べて量子的効果によりパワー変換効率が
約２倍に改善され、従来より低い印加電圧で実用上十分
な高輝度特性が得られた。また発光面の輝度分布の均一
性も霞れブヒものであった。The light-emitting element configured in this way has a power conversion efficiency that is approximately doubled due to quantum effects compared to the conventional structure shown in Figure 1, and can achieve a sufficiently high luminance for practical use with a lower applied voltage than before. characteristics were obtained. Furthermore, the uniformity of the luminance distribution on the light emitting surface was also poor.
また、発光ノ※２４に発光中心となるドーバン） トＬ
ｉＡｇ、Ｃｕ、Ｔｂ、Ｔｍ、Ｅｕ、Ｍｎ、Ａｊ’ 、
ハロゲン元素等を添加することによって、各ドーパント
に約応した波長域での発光強度の増大が確認された。In addition, the light emission center is Doban) L in light emission *24
iAg, Cu, Tb, Tm, Eu, Mn, Aj',
It was confirmed that by adding a halogen element, etc., the emission intensity increased in a wavelength range corresponding to each dopant.
なお上記実施例では第１１第２０ｎ−Ｖｌ族アモルファ
ス半導体薄膜とＣでそれぞれＺｎＳｘＳｅ１−ｘ。In the above embodiment, the 11th and 20th n-Vl group amorphous semiconductor thin films and C are ZnSxSe1-x, respectively.
Ｚｎ８ｙＳｅ、 、を用いたが、他の材料の組合せ、例
えはＣｄδｘｓｅ１−ｘとＣｄ５ｙＳｅｔ−ｙ 、 Ｚ
ｎｘＣｃ＋、−ｘＴｅとＺｎ、Ｃｄ、 、Ｔｅ の組
合せを用いることもできる。Zn8ySe, , was used, but other material combinations, such as Cdδxse1-x and Cd5ySet-y, Z
A combination of nxCc+, -xTe and Zn, Cd, , Te can also be used.
これらの材料を用いた場合にも、上記実施例と同様に禁
制帯幅の差や各薄膜の膜厚を設定することで同様の高輝
度特性を得ることができる。Even when these materials are used, similar high luminance characteristics can be obtained by setting the difference in forbidden band width and the thickness of each thin film in the same way as in the above embodiments.
また上記実施例はＡＣ駆動型としたが、ＤＣ駆動型とす
るには第１、第２の電極で直接発光層を挾持する構造と
すればよい。更に、基板として不透明材料を用いた場合
には、発光層上面側の第２の％極や絶縁膜を透明材料と
すれはよFurther, although the above embodiment is of an AC drive type, a DC drive type may be achieved by using a structure in which the light emitting layer is directly sandwiched between the first and second electrodes. Furthermore, if an opaque material is used as the substrate, the second % electrode on the upper surface of the light emitting layer and the insulating film should not be made of transparent material.
第１図は従来の電場発光型発光集子の一例を示す図、第
２図＆コ１本発明の一実施例の発光素子をン〕くず図で
ある。
２１・・・ガラス基板、２２・・・透明電板（第１の゛
電極）、２．？、２５・・・絶縁膜、２４・・・発光層
、２４ａ、 、 ２４ａ２．２４ａ、−−−Ｚｎ５ｙＳ
ｅ、−ｙ薄膜（第２の１ｉ −Ｖｉ族アモルファス半導
体薄ｊ摸）、２４ｂ□。
２４ ｂｌ・・−Ｚｎ５ｘＳｅ、、薄！ （２１１のｎ
−Ｖｌ 族アモルファス半２斗体薄ｙ）、２６・・・
金属電極（第２の電極）。
出願人代理人 弁理士 銘 江 武 彦第１図
第２図FIG. 1 is a diagram showing an example of a conventional electroluminescent type light-emitting collector, and FIG. 2 is a scrap diagram showing a light-emitting device according to an embodiment of the present invention. 21... Glass substrate, 22... Transparent electrode plate (first electrode), 2. ? , 25... Insulating film, 24... Light emitting layer, 24a, , 24a2.24a, ---Zn5yS
e, -y thin film (second 1i -Vi group amorphous semiconductor thin film), 24b□. 24 bl...-Zn5xSe, Thin! (n of 211
-Vl group amorphous hemi-di dorotic thin y), 26...
Metal electrode (second electrode). Applicant's agent Patent attorney Name: Takehiko E Figure 1 Figure 2
Claims (8)
Ｅ□なる第１のｎ−ｖｉ族アモルファス半導体薄膜を鎖
側帯幅Ｅ２ （ただしＥ １＜ Ｅ ２ ）なる第２
のｎ−ｖｉ族アモルファス半纏体薄膜で挾んだ構造を単
位発光層としてこれを一層または二層以上積層して発光
層を構成し、この発光層表面に第２の電極を設けてなる
ことを特徴とする発光素子。(1) On the substrate on which the first electrode is formed, a first n-vi group amorphous semiconductor thin film with a forbidden band width E
A structure sandwiched between n-vi group amorphous semi-consolidated thin films is used as a unit light-emitting layer, and one or more layers are laminated to form a light-emitting layer, and a second electrode is provided on the surface of this light-emitting layer. Characteristic light-emitting elements.
、Ｃｕ 、Ｔｂ 、’ｌ”ｍ、Ｅｕ 、Ｍｎ 、Ａｌ
、ハＤゲン元紫の中から選ばれた一以上の元素を含む喘
的請氷の範囲第１項記載の発光素子。(2) The light-emitting layer contains Ag as a dopant serving as a luminescent center.
, Cu, Tb, 'l''m, Eu, Mn, Al
2. The light emitting device according to claim 1, which contains one or more elements selected from the group consisting of 1, 2 and 3.
Ｚｎ５ｘＳｅ 、−Ｘ（０＜ Ｘ≦０．８）、ｉ２の］
−〜ｌｌｌｌ上ルファス半導体薄膜はＺｎ Ｓｙ Ｓｅ
、−ｙ（０，２＜Ｊ≦１）であって、禁制帯幅Ｅ、
、 Ｅ２の差をＥ２−Ｅｌ≧１００ 〔ｍｅＶＪ と
した特許請求の範囲第１ｉ記載の発光素子。(3) The first Ii-Vi group amorphous semiconductor thin film is Zn5xSe, -X (0<X≦0.8), i2]
-~lllllThe upper rufus semiconductor thin film is Zn Sy Se
, -y (0,2<J≦1), and the forbidden band width E,
, E2 is set to E2-El≧100 [meVJ]. The light emitting device according to claim 1i.
ｄＳｘＳｅ 、第２の１１− Ｖｉ Ｎアモルファ
ス −Ｘ 半導体満腹ばＣｄ Ｓｙ Ｓｅ であって、Ｘ側帯
−ｙ 幅Ｅ、 、 Ｅ２の差をＥ２−Ｅ１≧１００ （ｍｅＶ
Ｊとした特許請求の範囲第１項記載の発光集子。(4) First n-Vi group amorphous half-broken, body membrane is C
dSxSe, the second 11-ViN amorphous-X semiconductor satisfies CdSySe, and the difference between the widths E, , E2 of the
A light emitting concentrator according to claim 1, defined as J.
ｘＣａ、、−ｘＴｅ ｓ第２の’ｎ−Ｖｌ族アモルファ
ス半導体俤膜はＺｎ 、Ｃａ 、−ｙＴｅであって、先
制帯＋ＩＥ、、Ｅ２の差をＥ ２−Ｅ、″＞ １００
（ｍｅ’Ｖ Ｊとした特許請求の範囲第１項記載の発光
素子。(5) The first n-Vi group amorphous conductor film is Zn.
xCa,, -xTesThe second 'n-Vl group amorphous semiconductor film is Zn, Ca, -yTe, and the difference in preemptive band +IE,,E2 is E2-E,''> 100
(The light emitting device according to claim 1, defined as me'V J.
厚みを３０〜５０Ａ％第２のｉｔ −Ｖｌ族アモルファ
ス半導体薄膜の厚みを５０〜１００Ａ とした特許請求
の範囲第１項記載の発光素子。(6) The light emission according to claim 1, wherein the thickness of the first If-Vl group amorphous semiconductor thin film is 30 to 50A% and the thickness of the second It-Vl group amorphous semiconductor thin film is 50 to 100A. element.
せてＡＣ駆動を行うようにした特許請求の範囲第１項記
載の発光素子。(7) First. The light emitting device according to claim 1, wherein an insulating film is interposed between the second electrode and the light emitting layer to perform AC driving.
Ｃ駆動を行うようにした特許請求の範囲′ｅ４４１項記
載の発光素子。(8) By bringing the first and second electrodes into direct contact with the light emitting layer L)
A light-emitting device according to claim 'e441, which performs C drive.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58056170A JPS59181682A (en) | 1983-03-31 | 1983-03-31 | Light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58056170A JPS59181682A (en) | 1983-03-31 | 1983-03-31 | Light emitting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59181682A true JPS59181682A (en) | 1984-10-16 |
| JPH0160916B2 JPH0160916B2 (en) | 1989-12-26 |
Family
ID=13019620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58056170A Granted JPS59181682A (en) | 1983-03-31 | 1983-03-31 | Light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59181682A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61165993A (en) * | 1985-01-17 | 1986-07-26 | 株式会社小糸製作所 | Super thin film semiconductor optical apparatus |
| JPH01225095A (en) * | 1988-03-04 | 1989-09-07 | Komatsu Ltd | Thin film el element |
| JPH01239796A (en) * | 1988-03-22 | 1989-09-25 | Komatsu Ltd | Thin film el element |
-
1983
- 1983-03-31 JP JP58056170A patent/JPS59181682A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61165993A (en) * | 1985-01-17 | 1986-07-26 | 株式会社小糸製作所 | Super thin film semiconductor optical apparatus |
| JPH0570277B2 (en) * | 1985-01-17 | 1993-10-04 | Koito Mfg Co Ltd | |
| JPH01225095A (en) * | 1988-03-04 | 1989-09-07 | Komatsu Ltd | Thin film el element |
| JPH01239796A (en) * | 1988-03-22 | 1989-09-25 | Komatsu Ltd | Thin film el element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0160916B2 (en) | 1989-12-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20090026926A1 (en) | Transparent conductive film and dispersion-type electroluminescence device using said film | |
| WO1983004123A1 (en) | Electroluminescent display unit | |
| CN105304829B (en) | A kind of double-side light emitting diode with quantum dots and preparation method thereof | |
| US5700591A (en) | Light-emitting thin film and thin film EL device | |
| WO2007139033A1 (en) | Surface emitting electroluminescent element | |
| US5581150A (en) | TFEL device with injection layer | |
| US20100109521A1 (en) | Quantum dot electroluminescent device | |
| Xu et al. | Improved efficiency of all-inorganic quantum-dot light-emitting diodes via interface engineering | |
| JPH03141588A (en) | Electroluminescent device | |
| JPS59181682A (en) | Light emitting element | |
| JPH02253593A (en) | Luminous element | |
| US6451460B1 (en) | Thin film electroluminescent device | |
| JPH02251429A (en) | Transparent conductive film | |
| JPS59181485A (en) | Light emitting element | |
| KR20090079810A (en) | Inorganic phosphor | |
| CN112802877B (en) | Composite quantum dot, quantum dot color film, preparation method of quantum dot color film and quantum dot display device | |
| JP2715620B2 (en) | Composite luminous body thin film and thin film EL device | |
| JPH0123917B2 (en) | ||
| JPH0433120B2 (en) | ||
| WO2001069981A1 (en) | Light emitting phosphor materials | |
| TW563384B (en) | Electroluminescent laminate with patterned phosphor structure and thick film dielectric with improved dielectric properties | |
| JPH03280395A (en) | Light emitting film and thin film el element | |
| JP2009170358A (en) | Inorganic el element | |
| Ramrakhiani | Vikas Lahariya | |
| JPH01122594A (en) | Thin film type electroluminescence element |