JPS59181657A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59181657A
JPS59181657A JP58056013A JP5601383A JPS59181657A JP S59181657 A JPS59181657 A JP S59181657A JP 58056013 A JP58056013 A JP 58056013A JP 5601383 A JP5601383 A JP 5601383A JP S59181657 A JPS59181657 A JP S59181657A
Authority
JP
Japan
Prior art keywords
region
film
channel
improved
crystallinity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58056013A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0481338B2 (enExample
Inventor
Takao Oota
多禾夫 太田
Toshio Yoshii
俊夫 吉井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58056013A priority Critical patent/JPS59181657A/ja
Publication of JPS59181657A publication Critical patent/JPS59181657A/ja
Publication of JPH0481338B2 publication Critical patent/JPH0481338B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58056013A 1983-03-31 1983-03-31 半導体装置の製造方法 Granted JPS59181657A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58056013A JPS59181657A (ja) 1983-03-31 1983-03-31 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58056013A JPS59181657A (ja) 1983-03-31 1983-03-31 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59181657A true JPS59181657A (ja) 1984-10-16
JPH0481338B2 JPH0481338B2 (enExample) 1992-12-22

Family

ID=13015170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58056013A Granted JPS59181657A (ja) 1983-03-31 1983-03-31 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59181657A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6388841A (ja) * 1986-09-25 1988-04-19 ゼネラル・エレクトリック・カンパニイ シリコン・オン・インシュレータ半導体素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6388841A (ja) * 1986-09-25 1988-04-19 ゼネラル・エレクトリック・カンパニイ シリコン・オン・インシュレータ半導体素子

Also Published As

Publication number Publication date
JPH0481338B2 (enExample) 1992-12-22

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