JPH0481338B2 - - Google Patents

Info

Publication number
JPH0481338B2
JPH0481338B2 JP58056013A JP5601383A JPH0481338B2 JP H0481338 B2 JPH0481338 B2 JP H0481338B2 JP 58056013 A JP58056013 A JP 58056013A JP 5601383 A JP5601383 A JP 5601383A JP H0481338 B2 JPH0481338 B2 JP H0481338B2
Authority
JP
Japan
Prior art keywords
channel
region
type
film
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58056013A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59181657A (ja
Inventor
Takao Oota
Toshio Yoshii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58056013A priority Critical patent/JPS59181657A/ja
Publication of JPS59181657A publication Critical patent/JPS59181657A/ja
Publication of JPH0481338B2 publication Critical patent/JPH0481338B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58056013A 1983-03-31 1983-03-31 半導体装置の製造方法 Granted JPS59181657A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58056013A JPS59181657A (ja) 1983-03-31 1983-03-31 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58056013A JPS59181657A (ja) 1983-03-31 1983-03-31 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59181657A JPS59181657A (ja) 1984-10-16
JPH0481338B2 true JPH0481338B2 (enExample) 1992-12-22

Family

ID=13015170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58056013A Granted JPS59181657A (ja) 1983-03-31 1983-03-31 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59181657A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4775641A (en) * 1986-09-25 1988-10-04 General Electric Company Method of making silicon-on-sapphire semiconductor devices

Also Published As

Publication number Publication date
JPS59181657A (ja) 1984-10-16

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