JPS59181609A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59181609A
JPS59181609A JP5601283A JP5601283A JPS59181609A JP S59181609 A JPS59181609 A JP S59181609A JP 5601283 A JP5601283 A JP 5601283A JP 5601283 A JP5601283 A JP 5601283A JP S59181609 A JPS59181609 A JP S59181609A
Authority
JP
Japan
Prior art keywords
film
single crystal
silicon
thermal oxide
crystallinity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5601283A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0136971B2 (enExample
Inventor
Takao Oota
多禾夫 太田
Toshio Yoshii
俊夫 吉井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP5601283A priority Critical patent/JPS59181609A/ja
Publication of JPS59181609A publication Critical patent/JPS59181609A/ja
Publication of JPH0136971B2 publication Critical patent/JPH0136971B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02694—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP5601283A 1983-03-31 1983-03-31 半導体装置の製造方法 Granted JPS59181609A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5601283A JPS59181609A (ja) 1983-03-31 1983-03-31 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5601283A JPS59181609A (ja) 1983-03-31 1983-03-31 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59181609A true JPS59181609A (ja) 1984-10-16
JPH0136971B2 JPH0136971B2 (enExample) 1989-08-03

Family

ID=13015139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5601283A Granted JPS59181609A (ja) 1983-03-31 1983-03-31 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59181609A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63137412A (ja) * 1986-11-29 1988-06-09 Sharp Corp 半導体用基板の製造方法
WO2002004935A1 (fr) * 2000-07-06 2002-01-17 Asahi Kasei Kabushiki Kaisha Détecteur de molécules

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54161268A (en) * 1978-06-09 1979-12-20 Hewlett Packard Yokogawa Method of manufacturing semiconductor device growing silicon layer on sapphire substrate
JPS56103425A (en) * 1980-01-21 1981-08-18 Nippon Telegr & Teleph Corp <Ntt> Improving method for semiconductor substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54161268A (en) * 1978-06-09 1979-12-20 Hewlett Packard Yokogawa Method of manufacturing semiconductor device growing silicon layer on sapphire substrate
JPS56103425A (en) * 1980-01-21 1981-08-18 Nippon Telegr & Teleph Corp <Ntt> Improving method for semiconductor substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63137412A (ja) * 1986-11-29 1988-06-09 Sharp Corp 半導体用基板の製造方法
WO2002004935A1 (fr) * 2000-07-06 2002-01-17 Asahi Kasei Kabushiki Kaisha Détecteur de molécules

Also Published As

Publication number Publication date
JPH0136971B2 (enExample) 1989-08-03

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