JPS59169123A - 化合物半導体のエピタキシヤル成長法 - Google Patents
化合物半導体のエピタキシヤル成長法Info
- Publication number
- JPS59169123A JPS59169123A JP58042397A JP4239783A JPS59169123A JP S59169123 A JPS59169123 A JP S59169123A JP 58042397 A JP58042397 A JP 58042397A JP 4239783 A JP4239783 A JP 4239783A JP S59169123 A JPS59169123 A JP S59169123A
- Authority
- JP
- Japan
- Prior art keywords
- alkoxide
- vanadium
- reaction system
- gas
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 14
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims abstract 8
- 238000000034 method Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 150000004678 hydrides Chemical class 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- -1 vanadium (V) alkoxide Chemical class 0.000 claims 1
- 150000004703 alkoxides Chemical class 0.000 abstract description 24
- 239000013078 crystal Substances 0.000 abstract description 12
- 239000007789 gas Substances 0.000 abstract description 11
- 239000007787 solid Substances 0.000 abstract description 11
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 8
- 239000007788 liquid Substances 0.000 abstract description 8
- 239000006200 vaporizer Substances 0.000 abstract description 5
- 239000012159 carrier gas Substances 0.000 abstract description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 4
- 238000000859 sublimation Methods 0.000 abstract description 3
- 230000008022 sublimation Effects 0.000 abstract description 3
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 101100215641 Aeromonas salmonicida ash3 gene Proteins 0.000 description 1
- 241000555745 Sciuridae Species 0.000 description 1
- NMARTRYAYDQTJI-UHFFFAOYSA-N [Cr].[C]=O Chemical compound [Cr].[C]=O NMARTRYAYDQTJI-UHFFFAOYSA-N 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58042397A JPS59169123A (ja) | 1983-03-16 | 1983-03-16 | 化合物半導体のエピタキシヤル成長法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58042397A JPS59169123A (ja) | 1983-03-16 | 1983-03-16 | 化合物半導体のエピタキシヤル成長法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59169123A true JPS59169123A (ja) | 1984-09-25 |
| JPS64809B2 JPS64809B2 (enrdf_load_stackoverflow) | 1989-01-09 |
Family
ID=12634928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58042397A Granted JPS59169123A (ja) | 1983-03-16 | 1983-03-16 | 化合物半導体のエピタキシヤル成長法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59169123A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015038252A (ja) * | 2012-05-27 | 2015-02-26 | エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ | フィルタを有する容器 |
-
1983
- 1983-03-16 JP JP58042397A patent/JPS59169123A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015038252A (ja) * | 2012-05-27 | 2015-02-26 | エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ | フィルタを有する容器 |
| EP2677061A3 (en) * | 2012-05-27 | 2015-11-11 | Air Products And Chemicals, Inc. | Vessel with Filter |
| US9598766B2 (en) | 2012-05-27 | 2017-03-21 | Air Products And Chemicals, Inc. | Vessel with filter |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS64809B2 (enrdf_load_stackoverflow) | 1989-01-09 |
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