JPS59169123A - 化合物半導体のエピタキシヤル成長法 - Google Patents

化合物半導体のエピタキシヤル成長法

Info

Publication number
JPS59169123A
JPS59169123A JP58042397A JP4239783A JPS59169123A JP S59169123 A JPS59169123 A JP S59169123A JP 58042397 A JP58042397 A JP 58042397A JP 4239783 A JP4239783 A JP 4239783A JP S59169123 A JPS59169123 A JP S59169123A
Authority
JP
Japan
Prior art keywords
alkoxide
vanadium
reaction system
gas
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58042397A
Other languages
English (en)
Japanese (ja)
Other versions
JPS64809B2 (enrdf_load_stackoverflow
Inventor
Masahiro Akiyama
秋山 正博
Yoshihiro Kawarada
河原田 美裕
Hiroshi Nakamura
浩 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58042397A priority Critical patent/JPS59169123A/ja
Publication of JPS59169123A publication Critical patent/JPS59169123A/ja
Publication of JPS64809B2 publication Critical patent/JPS64809B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP58042397A 1983-03-16 1983-03-16 化合物半導体のエピタキシヤル成長法 Granted JPS59169123A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58042397A JPS59169123A (ja) 1983-03-16 1983-03-16 化合物半導体のエピタキシヤル成長法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58042397A JPS59169123A (ja) 1983-03-16 1983-03-16 化合物半導体のエピタキシヤル成長法

Publications (2)

Publication Number Publication Date
JPS59169123A true JPS59169123A (ja) 1984-09-25
JPS64809B2 JPS64809B2 (enrdf_load_stackoverflow) 1989-01-09

Family

ID=12634928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58042397A Granted JPS59169123A (ja) 1983-03-16 1983-03-16 化合物半導体のエピタキシヤル成長法

Country Status (1)

Country Link
JP (1) JPS59169123A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015038252A (ja) * 2012-05-27 2015-02-26 エア プロダクツ アンド ケミカルズ インコーポレイテッドAir Products And Chemicals Incorporated フィルタを有する容器

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015038252A (ja) * 2012-05-27 2015-02-26 エア プロダクツ アンド ケミカルズ インコーポレイテッドAir Products And Chemicals Incorporated フィルタを有する容器
EP2677061A3 (en) * 2012-05-27 2015-11-11 Air Products And Chemicals, Inc. Vessel with Filter
US9598766B2 (en) 2012-05-27 2017-03-21 Air Products And Chemicals, Inc. Vessel with filter

Also Published As

Publication number Publication date
JPS64809B2 (enrdf_load_stackoverflow) 1989-01-09

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