JPS59167017A - アルミニウムあるいはアルミニウム合金のスパツタ方法 - Google Patents

アルミニウムあるいはアルミニウム合金のスパツタ方法

Info

Publication number
JPS59167017A
JPS59167017A JP4089683A JP4089683A JPS59167017A JP S59167017 A JPS59167017 A JP S59167017A JP 4089683 A JP4089683 A JP 4089683A JP 4089683 A JP4089683 A JP 4089683A JP S59167017 A JPS59167017 A JP S59167017A
Authority
JP
Japan
Prior art keywords
aluminum
gas
alloy
film
processing chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4089683A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0360177B2 (enExample
Inventor
Yoshimi Shiotani
喜美 塩谷
Mamoru Maeda
守 前田
Mikio Takagi
幹夫 高木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4089683A priority Critical patent/JPS59167017A/ja
Publication of JPS59167017A publication Critical patent/JPS59167017A/ja
Publication of JPH0360177B2 publication Critical patent/JPH0360177B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP4089683A 1983-03-11 1983-03-11 アルミニウムあるいはアルミニウム合金のスパツタ方法 Granted JPS59167017A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4089683A JPS59167017A (ja) 1983-03-11 1983-03-11 アルミニウムあるいはアルミニウム合金のスパツタ方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4089683A JPS59167017A (ja) 1983-03-11 1983-03-11 アルミニウムあるいはアルミニウム合金のスパツタ方法

Publications (2)

Publication Number Publication Date
JPS59167017A true JPS59167017A (ja) 1984-09-20
JPH0360177B2 JPH0360177B2 (enExample) 1991-09-12

Family

ID=12593269

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4089683A Granted JPS59167017A (ja) 1983-03-11 1983-03-11 アルミニウムあるいはアルミニウム合金のスパツタ方法

Country Status (1)

Country Link
JP (1) JPS59167017A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61245525A (ja) * 1985-04-23 1986-10-31 Fujitsu Ltd 金属薄膜の製造方法
JPS6270571A (ja) * 1985-07-01 1987-04-01 ユナイテッド　キングドム　アトミック　エナ↓−ヂイ　オ↓−ソリテイ スパツタイオンメツキにより基板上に被覆を形成する方法
JP2005068558A (ja) * 2003-08-07 2005-03-17 Canon Inc ナノ構造体及びその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61245525A (ja) * 1985-04-23 1986-10-31 Fujitsu Ltd 金属薄膜の製造方法
JPS6270571A (ja) * 1985-07-01 1987-04-01 ユナイテッド　キングドム　アトミック　エナ↓−ヂイ　オ↓−ソリテイ スパツタイオンメツキにより基板上に被覆を形成する方法
JP2005068558A (ja) * 2003-08-07 2005-03-17 Canon Inc ナノ構造体及びその製造方法

Also Published As

Publication number Publication date
JPH0360177B2 (enExample) 1991-09-12

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