JPS59165480A - 半導体発光素子 - Google Patents

半導体発光素子

Info

Publication number
JPS59165480A
JPS59165480A JP3986183A JP3986183A JPS59165480A JP S59165480 A JPS59165480 A JP S59165480A JP 3986183 A JP3986183 A JP 3986183A JP 3986183 A JP3986183 A JP 3986183A JP S59165480 A JPS59165480 A JP S59165480A
Authority
JP
Japan
Prior art keywords
type semiconductor
light
semiconductor layers
light emitting
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3986183A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0451997B2 (enrdf_load_stackoverflow
Inventor
Kenichi Kasahara
健一 笠原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3986183A priority Critical patent/JPS59165480A/ja
Publication of JPS59165480A publication Critical patent/JPS59165480A/ja
Publication of JPH0451997B2 publication Critical patent/JPH0451997B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
JP3986183A 1983-03-10 1983-03-10 半導体発光素子 Granted JPS59165480A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3986183A JPS59165480A (ja) 1983-03-10 1983-03-10 半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3986183A JPS59165480A (ja) 1983-03-10 1983-03-10 半導体発光素子

Publications (2)

Publication Number Publication Date
JPS59165480A true JPS59165480A (ja) 1984-09-18
JPH0451997B2 JPH0451997B2 (enrdf_load_stackoverflow) 1992-08-20

Family

ID=12564749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3986183A Granted JPS59165480A (ja) 1983-03-10 1983-03-10 半導体発光素子

Country Status (1)

Country Link
JP (1) JPS59165480A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61168980A (ja) * 1985-01-22 1986-07-30 Nippon Telegr & Teleph Corp <Ntt> 半導体発光素子
JPS61190992A (ja) * 1985-02-19 1986-08-25 Nippon Telegr & Teleph Corp <Ntt> 量子井戸型光変調器つき半導体レ−ザ
JPS61198792A (ja) * 1985-02-28 1986-09-03 Tokyo Inst Of Technol 能動光集積回路
JPS62229990A (ja) * 1986-03-31 1987-10-08 Nippon Telegr & Teleph Corp <Ntt> 半導体発光素子の製造法
JPS6318683A (ja) * 1986-07-11 1988-01-26 Nec Corp 光短パルス発生装置
JPH01140781A (ja) * 1987-11-27 1989-06-01 Hitachi Ltd 光増幅器
FR2681191A1 (fr) * 1991-09-06 1993-03-12 France Telecom Composant integre laser-modulateur a super-reseau tres couple.
JPH05259506A (ja) * 1992-01-10 1993-10-08 Internatl Business Mach Corp <Ibm> 超発光半導体ダイオード及びその製造方法
JP2005019533A (ja) * 2003-06-24 2005-01-20 Oki Electric Ind Co Ltd 光半導体素子，及び光半導体素子の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57145385A (en) * 1981-03-03 1982-09-08 Nippon Telegr & Teleph Corp <Ntt> Method for generating light pulse train

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57145385A (en) * 1981-03-03 1982-09-08 Nippon Telegr & Teleph Corp <Ntt> Method for generating light pulse train

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61168980A (ja) * 1985-01-22 1986-07-30 Nippon Telegr & Teleph Corp <Ntt> 半導体発光素子
JPS61190992A (ja) * 1985-02-19 1986-08-25 Nippon Telegr & Teleph Corp <Ntt> 量子井戸型光変調器つき半導体レ−ザ
JPS61198792A (ja) * 1985-02-28 1986-09-03 Tokyo Inst Of Technol 能動光集積回路
JPS62229990A (ja) * 1986-03-31 1987-10-08 Nippon Telegr & Teleph Corp <Ntt> 半導体発光素子の製造法
JPS6318683A (ja) * 1986-07-11 1988-01-26 Nec Corp 光短パルス発生装置
JPH01140781A (ja) * 1987-11-27 1989-06-01 Hitachi Ltd 光増幅器
FR2681191A1 (fr) * 1991-09-06 1993-03-12 France Telecom Composant integre laser-modulateur a super-reseau tres couple.
US5305343A (en) * 1991-09-06 1994-04-19 France Telecom Etablissement Autonome De Droit Public Highly coupled superlattice integrated laser-modulator component
JPH05259506A (ja) * 1992-01-10 1993-10-08 Internatl Business Mach Corp <Ibm> 超発光半導体ダイオード及びその製造方法
JP2005019533A (ja) * 2003-06-24 2005-01-20 Oki Electric Ind Co Ltd 光半導体素子，及び光半導体素子の製造方法

Also Published As

Publication number Publication date
JPH0451997B2 (enrdf_load_stackoverflow) 1992-08-20

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