JPS5916346A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS5916346A JPS5916346A JP12641882A JP12641882A JPS5916346A JP S5916346 A JPS5916346 A JP S5916346A JP 12641882 A JP12641882 A JP 12641882A JP 12641882 A JP12641882 A JP 12641882A JP S5916346 A JPS5916346 A JP S5916346A
- Authority
- JP
- Japan
- Prior art keywords
- film
- psg film
- flow
- psg
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 238000010438 heat treatment Methods 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 230000005855 radiation Effects 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 8
- 239000011574 phosphorus Substances 0.000 abstract description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052681 coesite Inorganic materials 0.000 abstract description 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 3
- 229910052682 stishovite Inorganic materials 0.000 abstract description 3
- 229910052905 tridymite Inorganic materials 0.000 abstract description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 229910002804 graphite Inorganic materials 0.000 abstract description 2
- 239000010439 graphite Substances 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000007547 defect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910018096 ScF3 Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- OYLRFHLPEAGKJU-UHFFFAOYSA-N phosphane silicic acid Chemical compound P.[Si](O)(O)(O)O OYLRFHLPEAGKJU-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- OEKDNFRQVZLFBZ-UHFFFAOYSA-K scandium fluoride Chemical compound F[Sc](F)F OEKDNFRQVZLFBZ-UHFFFAOYSA-K 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12641882A JPS5916346A (ja) | 1982-07-19 | 1982-07-19 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12641882A JPS5916346A (ja) | 1982-07-19 | 1982-07-19 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5916346A true JPS5916346A (ja) | 1984-01-27 |
| JPS643343B2 JPS643343B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-01-20 |
Family
ID=14934676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12641882A Granted JPS5916346A (ja) | 1982-07-19 | 1982-07-19 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5916346A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6037132A (ja) * | 1983-08-09 | 1985-02-26 | Ushio Inc | 燐硅酸ガラスもしくは燐硼素硅酸ガラスの流動化法 |
| JPS61263159A (ja) * | 1985-03-15 | 1986-11-21 | フエアチヤイルド セミコンダクタ コ−ポレ−シヨン | 集積回路用の高温相互接続方式 |
| EP0794563A3 (en) * | 1996-03-06 | 1997-09-17 | Nec Corporation | Semiconductor device having oxygen-doped silicon layer so as to restrict diffusion from heavily doped silicon layer and process of fabrication thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5460558A (en) * | 1977-10-24 | 1979-05-16 | Hitachi Ltd | Electrode forming method |
| JPS5591872A (en) * | 1978-12-29 | 1980-07-11 | Nec Corp | Manufacture of semiconductor device |
-
1982
- 1982-07-19 JP JP12641882A patent/JPS5916346A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5460558A (en) * | 1977-10-24 | 1979-05-16 | Hitachi Ltd | Electrode forming method |
| JPS5591872A (en) * | 1978-12-29 | 1980-07-11 | Nec Corp | Manufacture of semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6037132A (ja) * | 1983-08-09 | 1985-02-26 | Ushio Inc | 燐硅酸ガラスもしくは燐硼素硅酸ガラスの流動化法 |
| JPS61263159A (ja) * | 1985-03-15 | 1986-11-21 | フエアチヤイルド セミコンダクタ コ−ポレ−シヨン | 集積回路用の高温相互接続方式 |
| EP0794563A3 (en) * | 1996-03-06 | 1997-09-17 | Nec Corporation | Semiconductor device having oxygen-doped silicon layer so as to restrict diffusion from heavily doped silicon layer and process of fabrication thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS643343B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-01-20 |