JPS59161844A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS59161844A
JPS59161844A JP58035838A JP3583883A JPS59161844A JP S59161844 A JPS59161844 A JP S59161844A JP 58035838 A JP58035838 A JP 58035838A JP 3583883 A JP3583883 A JP 3583883A JP S59161844 A JPS59161844 A JP S59161844A
Authority
JP
Japan
Prior art keywords
substrate
chip
cap
elements
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58035838A
Other languages
Japanese (ja)
Inventor
Yoshihisa Takeo
竹尾 義久
Hiroshi Hososaka
細坂 啓
Kazuyoshi Sato
和義 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58035838A priority Critical patent/JPS59161844A/en
Publication of JPS59161844A publication Critical patent/JPS59161844A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce the outer dimension and thus increase the density in mounting by a method wherein a cap is made as a common cap, when a plurality of chip carrier type semiconductor elements are sealed with said cap when mounting on a flat pin type substrate. CONSTITUTION:An Si chip 5 is fixed on a ceramic substrate 4, and electrode terminals provided on said chip are connected to a conductive layer 6 formed in the periphery of the substrate 4 by means of wires 7, thus being formed as the chip carrier type semiconductor element 3. Next, when a plurality of these elements 3 are mounted and formed into a multi-chip type semiconductor devide, these elements 3 are loaded at fixed intervals on the ceramic substrate 1 provided with many flat type lead pins 2 on the under surface of the periphery and conducted to the inner wiring of the substrate. Thereafter, while covering all these elements 3, they are hermetically sealed by placing the common cap 8 made of a ceramic material over the substrate 1. Thus, it is avoided to provide a hermetic sealing cap for every element 3, and accordingly the number of processes is reduced.

Description

【発明の詳細な説明】 [技術分野] 本発明は半導体装置に関し、さらにはいわゆるチップキ
ャリア型半導体装置を複数個実装してなるマルチチップ
型の半導体装置に特に有効な技術に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a semiconductor device, and more particularly to a technique particularly effective for a multi-chip type semiconductor device formed by mounting a plurality of so-called chip carrier type semiconductor devices.

[背景技術] この種のマルチチップ型半導体装置においては、たとえ
ばセラミックの基板上に実装されるチップキャリア型半
導体装置(以下チップキャリアと称する)はそれぞれ個
別的にパンケージ内に気密封止するのが通常考えられる
方式である。
[Background Art] In this type of multi-chip semiconductor device, for example, each chip carrier type semiconductor device (hereinafter referred to as a chip carrier) mounted on a ceramic substrate is hermetically sealed in a pan cage. This is the method normally considered.

ところが、この場合には、個々のチップキャリア毎に気
密封止を行う必要上、気密封止の工数が多くなる。
However, in this case, it is necessary to hermetically seal each chip carrier, which increases the number of steps required for hermetically sealing.

また、たとえば、実装用のセラミック基板に設けられる
リードピンが特にフラットピン型のものである場合、リ
ードピンが基板の周囲に突出する分だけチップキャリア
の実装面積を小さくすることが要求されるが、前記方式
ではチップキャリア毎体の外形寸法を小さくする他なく
、その場合にはたとえばメモリチップがチーツブキャリ
ア内に実装できなくなる等の問題が生じる。
Further, for example, if the lead pins provided on the ceramic substrate for mounting are of a flat pin type, it is required to reduce the mounting area of the chip carrier by the amount that the lead pins protrude around the substrate. In this method, there is no choice but to reduce the external dimensions of each chip carrier, and in that case, problems arise such as, for example, the memory chip cannot be mounted inside the chip carrier.

[発明の目的] 本発明の目的は、外形寸法を小型化でき、より高密度の
実装が可能な半導体装置を提供することにある。
[Object of the Invention] An object of the present invention is to provide a semiconductor device whose external dimensions can be reduced and which can be mounted at a higher density.

本発明の他の目的は、気密封止の工数を低減できる半導
体装置を提供することにある。
Another object of the present invention is to provide a semiconductor device that can reduce the number of steps required for hermetic sealing.

本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[発明の概要] 本願において開示される発明のうち代表的なものの概要
を簡単に親明すれば、次の通りである。
[Summary of the Invention] A brief outline of typical inventions disclosed in this application is as follows.

すなわち、複数個のチップキャリア型の半導体素子を共
通に封止することにより、外形寸法の小型化、高密度実
装化、封止回数の低減が可能である。
That is, by commonly sealing a plurality of chip carrier type semiconductor elements, it is possible to reduce the external dimensions, achieve high density packaging, and reduce the number of times of sealing.

[実施例コ 第1図は本発明による半導体装置の一実施例を示す断面
図、第2図は本発明に使用できるチップキャリア型半導
体素子を示す断面図である。
[Embodiment] FIG. 1 is a cross-sectional view showing an example of a semiconductor device according to the present invention, and FIG. 2 is a cross-sectional view showing a chip carrier type semiconductor element that can be used in the present invention.

この実施例において、たとえばセラミックよりなる基板
1の周辺部下面にはフラット型のリードピン2が多数本
設けられ、各リードピンは基板1の内部配線(図示せず
)と電気的に導通している。
In this embodiment, a large number of flat lead pins 2 are provided on the lower surface of the periphery of a substrate 1 made of, for example, ceramic, and each lead pin is electrically connected to internal wiring (not shown) of the substrate 1.

一方、基板1の上面には、複数個のチップキャリア型半
導体素子(チップキャリア)3が実装され、いわゆるマ
ルチチップ型半導体装置構造となっている。各チップキ
ャリア3としては、たとえば第2図に拡大図示するよう
に、セラミック基体4上にシリコンチップ5を搭載しか
つシリコンチップ5のポンディングパッドとセラミック
基体4の導電層6とをワイヤ7で電気的に接続し、さら
に導電層6を基板1の配線と導電接続するという構成の
ものを使用することができ、後述のように、各チップキ
ャリア3毎に気密封止を行う必要がない。
On the other hand, a plurality of chip carrier type semiconductor elements (chip carriers) 3 are mounted on the upper surface of the substrate 1, forming a so-called multi-chip type semiconductor device structure. For example, as shown in an enlarged view in FIG. 2, each chip carrier 3 has a silicon chip 5 mounted on a ceramic base 4, and wires 7 between the bonding pads of the silicon chip 5 and the conductive layer 6 of the ceramic base 4. It is possible to use a configuration in which the conductive layer 6 is electrically connected and further conductively connected to the wiring of the substrate 1, and there is no need to perform airtight sealing for each chip carrier 3 as described later.

また、本実施例においては、パンケージの気密封止用の
キャンプとして、全部のチップキャリア3を1個で共通
的に気密封止するためのキャンプ8はたとえばセラミッ
ク材料よりなり、その開口端(下端)は基板1の外周縁
部の上面に、たとえば低融点ガラスの如き封止材9によ
り接着して気密封止されている。
Further, in this embodiment, the camp 8 for hermetically sealing all the chip carriers 3 in common as a camp for hermetically sealing the pan cage is made of, for example, a ceramic material, and its open end (lower end ) is hermetically sealed by adhering to the upper surface of the outer peripheral edge of the substrate 1 with a sealing material 9 such as low melting point glass.

したがって、本実施例によれば、マルチチップ型半導体
装置を構成する複数個のチップキャリア3を1個のキャ
ンプ8のみで共通的に気密封止する構・造であるので、
各チップキャリア3毎に気密封止を行う必要がなく、気
密封止の工数を大巾に低減できる上に、各チップキャリ
ア3毎の封止代が不要であるので、テンプキャリア3自
体の外形寸法を小型化することができ、同一実装面積あ
たりでより高密度の実装が可能となる。
Therefore, according to this embodiment, since the plurality of chip carriers 3 constituting a multi-chip semiconductor device are commonly hermetically sealed with only one camp 8,
It is not necessary to perform hermetic sealing for each chip carrier 3, and the number of steps for hermetic sealing can be greatly reduced.In addition, there is no need for sealing allowance for each chip carrier 3, so the external shape of the balance carrier 3 itself Dimensions can be reduced, and higher density packaging is possible within the same mounting area.

また、基板1のリードピン2としてもアキシャル型のも
のを用いることもできる。
Further, an axial type can also be used as the lead pin 2 of the substrate 1.

[効果コ (1)、複数個の半導体素子を共通に気密封止するキャ
ップを設けることにより、気密封止の工数を低減できる
[Effect (1): By providing a cap that commonly hermetically seals a plurality of semiconductor elements, the number of steps for hermetically sealing can be reduced.

(2)、複数個の半導体素子を共通に気密封止するキャ
ンプを設けることにより、各半導体素子毎の封止代が不
要となり、半導体装置の小型化、高密度実装化が可能で
ある。
(2) By providing a camp for hermetically sealing a plurality of semiconductor elements in common, sealing allowance for each semiconductor element becomes unnecessary, and it is possible to miniaturize the semiconductor device and achieve high-density packaging.

(3)、前記(1)、(2)によりコストの低減を図る
こともできる。
(3) It is also possible to reduce costs by using the above (1) and (2).

以上本発明者によってなされた発明を実施例にもとづき
具体的に説明したが、本発明は前記実施例に限定される
ものではなく、その要旨を逸脱しない範囲で種々変更可
能であることはいうまでもない。
Although the invention made by the present inventor has been specifically explained above based on examples, it goes without saying that the present invention is not limited to the above-mentioned examples and can be modified in various ways without departing from the gist thereof. Nor.

たとえば、キャップ1個で全部の半導体素子を封止する
他に、種類の異なる半導体素子を実装するような場合等
においては、各種類毎に別のキャンプで複数個の半導体
素子をまとめて封止すること等も可能である。
For example, in addition to sealing all semiconductor elements with one cap, when mounting different types of semiconductor elements, it is necessary to seal multiple semiconductor elements together in separate camps for each type. It is also possible to do the following.

[利用分野] 以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野であるチップキャリア型半
導体装置よりなるマルチチップ型半導体装置に適用した
場合について説明したが、それに限定されるものではな
く、たとえば、それ以外の型式の半導体素子を有する場
合等にも利用できる。
[Field of Application] In the above description, the invention made by the present inventor was mainly applied to a multi-chip semiconductor device consisting of a chip carrier type semiconductor device, which is the field of application which is the background of the invention, but the present invention is not limited thereto. It can also be used, for example, in cases where other types of semiconductor elements are included.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による半導体装置の一実施例を示す断面
図、 第2図は本発明に使用できるチンブキャリア型半導体素
子の一例を一部断面図で示す図である。 ■・・・基板、2・・・リードビン、3・・・チンプキ
ャリア型半導体素子、4・・・セラミンク基体、5・・
・シリコンチップ、6・・・導電層、7・・・ワイヤ、
8・・・キャンプ、9・・・封止材。 第  1  図 Z 第  2 図
FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor device according to the present invention, and FIG. 2 is a partially cross-sectional view showing an example of a chimbu carrier type semiconductor element that can be used in the present invention. ■... Substrate, 2... Lead bin, 3... Chimp carrier type semiconductor element, 4... Ceramic base, 5...
・Silicon chip, 6... Conductive layer, 7... Wire,
8...Camp, 9...Sealing material. Figure 1 Z Figure 2

Claims (1)

【特許請求の範囲】 1、複数個の半導体素子を基板上に実装してなる半導体
装置において、複数個の半導体素子を共通に封止するキ
ャップを設けたことを特徴とする半導体装置。 2、半導体素子がチップキャリア型半導体素子よりなる
ことを特徴とする特許請求の範囲第1項記載の半導体装
置。 3゜基板がフラットピン型基板であることを特徴 ゛と
する特許請求の範囲第1項記載の半導体装置。
[Scope of Claims] 1. A semiconductor device comprising a plurality of semiconductor elements mounted on a substrate, characterized in that a cap is provided for commonly sealing the plurality of semiconductor elements. 2. The semiconductor device according to claim 1, wherein the semiconductor element is a chip carrier type semiconductor element. 2. The semiconductor device according to claim 1, wherein the 3° substrate is a flat pin type substrate.
JP58035838A 1983-03-07 1983-03-07 Semiconductor device Pending JPS59161844A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58035838A JPS59161844A (en) 1983-03-07 1983-03-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58035838A JPS59161844A (en) 1983-03-07 1983-03-07 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS59161844A true JPS59161844A (en) 1984-09-12

Family

ID=12453112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58035838A Pending JPS59161844A (en) 1983-03-07 1983-03-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS59161844A (en)

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