JPH06224357A - Resin sealed type semiconductor device - Google Patents
Resin sealed type semiconductor deviceInfo
- Publication number
- JPH06224357A JPH06224357A JP5010332A JP1033293A JPH06224357A JP H06224357 A JPH06224357 A JP H06224357A JP 5010332 A JP5010332 A JP 5010332A JP 1033293 A JP1033293 A JP 1033293A JP H06224357 A JPH06224357 A JP H06224357A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- lead
- semiconductor device
- pin
- hanging pin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、樹脂封止型半導体装置
の改良に係わり、特に薄型平面実装型の樹脂封止型半導
体装置に好適する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a resin-encapsulated semiconductor device, and is particularly suitable for a thin plane mounting resin-encapsulated semiconductor device.
【0002】[0002]
【従来の技術】半導体素子の組立方式には、いわゆるタ
ブを利用するのに対してリ−ドフレ−ムも広く利用され
ており、半導体素子の機種に応じてリ−ドフレ−ムの型
を選定する。集積度が向上した半導体素子をマウントす
るリ−ドフレ−ムは、リ−ド数を増していわゆる多ピン
素子に備えているが、その形状を図1を参照して説明す
る。鉄や鉄−Ni合金更にクラッド材などから成る金属
板体をエッチングやプレス工程によって、所定形状のリ
−ドフレ−ムとする。この形状は前記のように型により
異なるものの、1個の半導体素子をマウントするべッド
部1をほぼ中央部分に設けた単位体を複数個連続して形
成し、単位体の数により長尺か短尺かに区別する。2. Description of the Related Art As a method for assembling semiconductor elements, a so-called tab is used, but a lead frame is also widely used. The lead frame type is selected according to the type of semiconductor element. To do. A lead frame for mounting a semiconductor device having an improved degree of integration is provided for a so-called multi-pin device by increasing the number of leads, and its shape will be described with reference to FIG. A metal plate body made of iron, an iron-Ni alloy, a clad material or the like is formed into a lead frame having a predetermined shape by etching or pressing. Although this shape differs depending on the type as described above, a plurality of unit bodies each having a bed portion 1 for mounting one semiconductor element in the substantially central portion are continuously formed, and the length is increased depending on the number of unit bodies. Distinguish whether it is short or short.
【0003】べッド部1の周囲には、やや間隔を保って
インナ−リ−ド2を設け、べッド部1にマウントする半
導体素子の電極とインナ−リ−ド2間に金属細線3を一
定のル−プにより張架して、他の電子機器との接続に備
える。リ−ドフレ−ムの機械的強度を維持するために周
囲の枠体には、連結細条を設け、樹脂封止工程後に除去
するのが一般的である。また、一連の工程後トランスフ
ァモ−ルド工程いわゆる樹脂封止工程を行って半導体素
子を外部雰囲気から保護すると共に、インナ−リ−ドを
封止樹脂外に導出して(アウタ−リ−ドと呼称する) 外
部の電子機器との電気的接続を行う。An inner lead 2 is provided around the bed portion 1 with a slight space therebetween, and a thin metal wire is provided between the electrode of the semiconductor element mounted on the bed portion 1 and the inner lead 2. 3 is stretched by a certain loop to prepare for connection with other electronic devices. In order to maintain the mechanical strength of the lead frame, it is common to provide a connecting strip on the surrounding frame and remove it after the resin sealing step. Further, after a series of steps, a transfer molding step, a so-called resin sealing step is performed to protect the semiconductor element from the external atmosphere, and the inner lead is led out of the sealing resin (outer lead and outer lead). Makes electrical connection to external electronic equipment.
【0004】このようなリ−ドフレ−ムは図1の上面図
に明らかなように、図示しない枠体の対向する位置を起
点とする吊りピン4によりベッド部1を固定して機械的
な強度を持たせており、その周囲に配置するインナ−リ
−ド2端との距離は割合接近している。半導体素子には
能動層または受動層を形成し、これと電気的に接続する
配線層を周囲に伸ばしていわゆるパッド5とも電気的に
接続し、このパッド5とインナ−リ−ド間に金属細線3
を張架するのは前記の通りである(図2参照)。なお吊
りピン4数は最低2個である。As is apparent from the top view of FIG. 1, such a lead frame has a mechanical strength by fixing the bed portion 1 by means of suspension pins 4 starting from opposite positions of a frame (not shown). Is provided, and the distance from the inner lead 2 end arranged around it is relatively close. An active layer or a passive layer is formed in the semiconductor element, and a wiring layer electrically connected to the semiconductor layer is extended to the periphery to electrically connect with a so-called pad 5, and a thin metal wire is provided between the pad 5 and the inner lead. Three
Stretching is as described above (see FIG. 2). The number of hanging pins 4 is at least two.
【0005】[0005]
【発明が解決しようとする課題】樹脂封止型半導体装置
の中には表面実装型の機種が多用されており、他の電子
機器の表面に実装するに際しては、特殊な形状に整形し
たアウタ−リ−ドを半田などを介して他の電子機器に固
着するが、その固着に当たっては、いわゆるリフロ−方
式を採用するのが一般的である。Among resin-encapsulated semiconductor devices, surface-mounting type devices are often used, and when mounting on the surface of other electronic equipment, an outer member shaped into a special shape is used. The lead is fixed to another electronic device via solder or the like, and the so-called reflow method is generally adopted for the fixing.
【0006】一方リ−ドフレ−ムに形成するベッド部は
ほぼ長方形であり、その短辺側にパッド5を設けると共
にインナ−リ−ド2の先端も比較的近い位置に配置する
ことになり、他ピン素子においては多数のリ−ドを設置
せざるを得ない。従ってインナ−リ−ド2のラインスペ
−スを十分に採ろうとすると、逆に吊りピン4の幅があ
まり広くすることができない。On the other hand, the bed portion formed on the lead frame has a substantially rectangular shape, and the pad 5 is provided on the short side of the bed portion, and the tip of the inner lead 2 is also arranged at a relatively close position. In other pin elements, many leads must be installed. Therefore, if the line space of the inner lead 2 is to be taken sufficiently, on the contrary, the width of the hanging pin 4 cannot be made too wide.
【0007】これにより排出効果が十分でない。排出効
果とは、封止樹脂とリ−ドフレ−ムを構成する金属間に
生ずるわずかな隙間により、両材料に吸湿した水分が加
熱即ちリフロ−工程時に排出する効果を意味する。Therefore, the discharge effect is not sufficient. The drainage effect means an effect that moisture absorbed by both materials is discharged during the heating, that is, the reflow process due to a slight gap generated between the sealing resin and the metal forming the lead frame.
【0008】前記のように多ピン素子にあっては、イン
ナ−リ−ドの幅、間隔が狭くなると共に、吊りピン4の
幅も狭くなるので、前記水分の排出が十分でない。この
ために、リフロ−工程時に水分が膨脹して封止樹脂層に
クラックを発生する基になる。As described above, in the multi-pin element, the width and interval of the inner lead are narrowed and the width of the suspension pin 4 is also narrowed, so that the moisture is not sufficiently discharged. For this reason, the water expands during the reflow process and becomes a base for cracking the sealing resin layer.
【0009】本発明は、このような事情により成された
もので、新規な樹脂封止型半導体装置を提供することを
目的とする。The present invention has been made under such circumstances, and an object thereof is to provide a novel resin-sealed semiconductor device.
【0010】[0010]
【課題を解決するための手段】金属板体のほぼ中央部分
に設置するベッド部と,この周囲に配置するインナ−リ
−ドと,前記ベッド部に接続して設ける吊りピンと,こ
の吊りピンとこれに最も近い単独のインナ−リ−ドを合
体する幅広部と,前記ベッドにマウントする半導体素子
と,この半導体素子を被覆する封止樹脂層とに本発明に
係わる樹脂封止型半導体装置の特徴がある。更に前記ベ
ッド部を起点とする幅広部と,前記封止樹脂層に露出す
る前記幅広部からの複数終点と,この幅広部に形成する
最大幅部から前記複数終点を構成する単独の外部リ−ド
とにも特徴がある。Means for Solving the Problems A bed portion installed in a substantially central portion of a metal plate body, an inner lead arranged around the bed portion, a hanging pin connected to the bed portion, the hanging pin and the hanging pin Features of the resin-encapsulated semiconductor device according to the present invention in the wide portion for combining the single inner lead closest to the above, the semiconductor element mounted on the bed, and the encapsulating resin layer covering the semiconductor element. There is. Further, a wide portion starting from the bed portion, a plurality of end points from the wide portion exposed to the sealing resin layer, and a single external reel that constitutes the plurality of end points from the maximum width portion formed in the wide portion. There is also a feature.
【0011】[0011]
【作用】リ−ドフレ−ムを構成する金属層は、封止樹脂
層との間に生ずるわずかな隙間から吸蔵水分を排出する
効果を備えており、その排出が不十分な場合には、封止
樹脂層から成る外囲器にクラックが発生する。その証拠
としては、樹脂封止型半導体装置を約125℃で6時間
乾燥するとp.p.mのオ−ダで重量が減少する事実が
明らかになった。即ち、60%の湿度を保ち85℃に維
持した吸湿オ−ブンに樹脂封止型半導体装置を168時
間入れると、1000p.p.mのオ−ダで重量が減少
する事実に基ずいて本発明は完成し、特に平面実装型の
樹脂封止型半導体装置に好適する。The metal layer constituting the lead frame has the effect of discharging the stored moisture through the slight gap formed between the lead frame and the sealing resin layer. A crack occurs in the envelope made of the resin blocking layer. The proof is that if the resin-encapsulated semiconductor device is dried at about 125 ° C. for 6 hours, p. p. It became clear that the weight decreased with the order of m. That is, when the resin-encapsulated semiconductor device is put in a moisture absorption oven kept at a humidity of 60% and a temperature of 85 ° C. for 168 hours, 1000 p. p. The present invention has been completed based on the fact that the weight decreases with the order of m, and is particularly suitable for a planar mounting type resin-sealed semiconductor device.
【0012】[0012]
【実施例】本発明に係わる実施例を図3ならびに図4を
参照して説明する。両図はリ−ドフレ−ムに半導体素子
をマウントした後の上面図であり、SOP (Small Out Lin
ePackage)樹脂封止型半導体装置により説明する。Embodiments of the present invention will be described with reference to FIGS. Both figures are top views after mounting the semiconductor element on the lead frame. SOP (Small Out Lin)
ePackage) A resin-sealed semiconductor device will be described.
【0013】図2ならびに図3に明らかなように、SOP
型樹脂封止型半導体装置に使用するリ−ドフレ−ムも、
鉄や鉄−Ni合金更にクラッド材などから成る金属板体
をエッチングやプレス工程によって、所定の形状に成形
する。この形状は樹脂封止型半導体装置の型により異な
るものの、1個の半導体素子をマウントするべッド部1
をほぼ中央部分に設け、これを複数個連続してその数に
より長尺か短尺かに区別する。As is apparent from FIGS. 2 and 3, the SOP
The lead frame used for the resin mold semiconductor device
A metal plate body made of iron, an iron-Ni alloy, and a clad material is formed into a predetermined shape by an etching or pressing process. Although this shape differs depending on the type of the resin-encapsulated semiconductor device, the bed portion 1 for mounting one semiconductor element
Is provided in a substantially central portion, and a plurality of these are continuously provided to discriminate whether the length is long or short.
【0014】べッド部10の周囲には、やや間隔を保っ
てインナ−リ−ド11端を配置して、マウントする半導
体素子の電極とインナ−リ−ド11間に金属細線12を
一定のル−プにより張架するのに役立たせると共に他の
電子機器との接続に備える。このようなリ−ドフレ−ム
の機械的強度を維持するためには、インナ−リ−ド12
の起点である周囲の枠体に、いわゆる連結細条(図示せ
ず)を設け、樹脂封止工程後に除去するのが一般的であ
る。Around the bed portion 10, the inner lead 11 ends are arranged at a slight distance, and a thin metal wire 12 is fixed between the electrode of the semiconductor element to be mounted and the inner lead 11. It is useful for tensioning with a loop and prepared for connection with other electronic devices. In order to maintain the mechanical strength of such a lead frame, the inner lead 12
In general, a so-called connecting strip (not shown) is provided on the surrounding frame body, which is the starting point, and is removed after the resin sealing step.
【0015】また、一連のマウント工程後には、トラン
スファモ−ルド(Transfer Mold) 工程いわゆる樹脂封止
工程を行って半導体素子を外部雰囲気から保護すると共
に、インナ−リ−ド12を封止樹脂外に導出して外部の
電子機器との電気的接続を行う。After a series of mounting steps, a transfer mold step or so-called resin encapsulation step is performed to protect the semiconductor element from the external atmosphere, and the inner lead 12 is covered with the encapsulation resin. To establish electrical connection with external electronic equipment.
【0016】このようなリ−ドフレ−ムは図1の上面図
に明らかなように、図示しない枠体の対向する位置を起
点とする吊りピン13によりベッド部1を固定して機械
的な強度を持たせており、その周囲に配置するインナ−
リ−ド11端との距離は割合小さい。As is clear from the top view of FIG. 1, such a lead frame has a mechanical strength by fixing the bed portion 1 by means of a hanging pin 13 starting from a position opposite to a frame body (not shown). Inner to be placed around it
The distance from the end of the lead 11 is relatively small.
【0017】一方半導体素子には通常の工程により特定
の不純物を拡散して能動層または受動層を形成し、これ
と電気的に接続する配線層を周囲に伸ばしていわゆるパ
ッド5とも電気的に接続し、このパッド14とインナ−
リ−ド間に金属細線12を張架するのは前記の通りであ
る。なお吊りピン13の数は最低2個である。On the other hand, in the semiconductor element, a specific impurity is diffused by an ordinary process to form an active layer or a passive layer, and a wiring layer electrically connected to this is extended to the periphery and electrically connected to a so-called pad 5. The pad 14 and inner
The thin metal wire 12 is stretched between the leads as described above. The number of hanging pins 13 is at least two.
【0018】しかし、本願では吊りピン13とインナ−
リ−ド12の関係が従来技術と相違する。即ち、図3及
び図4に明らかなように一方の吊りピン13とこれに対
するインナ−リ−ドの本数を一本減らして、逆に吊りピ
ンに幅広部15を形成して吸湿水分の排出効果を増大す
る。However, in the present application, the hanging pin 13 and the inner pin are used.
The relationship of the lead 12 is different from that of the prior art. That is, as is apparent from FIGS. 3 and 4, the number of the hanging pin 13 on one side and the inner lead for the hanging pin 13 is reduced by one, and conversely, the wide portion 15 is formed on the hanging pin to remove the moisture absorbed. Increase.
【0019】ただし他のインナ−リ−ドの間隔は従来と
同様であり、その出口は封止樹脂層(図示せず)表面の
3個所a、b、cとなる。このような吊りピン13を備
えたSOP リ−ドフレ−ムに半導体素子をマウント後いわ
ゆるモ−ルド(Transfer Moldの略) 工程を行って樹脂封
止型半導体装置を完成すると、吸湿水分の排出効果が向
上する。However, the spacing of the other inner leads is the same as that of the conventional one, and the outlets thereof are at three points a, b and c on the surface of the sealing resin layer (not shown). After the semiconductor element is mounted on the SOP lead frame equipped with the suspension pins 13, a so-called transfer (abbreviation of Transfer Mold) process is performed to complete the resin-encapsulated semiconductor device. Is improved.
【0020】更にマウントする半導体素子に形成するパ
ッド14と、吊りピン13に最も近い位置のインナ−リ
−ド12とを電気的に接続しない機種では、図4に示す
ように遊びのインナ−リ−ド12と吊りピン13を合体
して図3の場合より幅が大きい幅広部15を形成する。
具体的には、インナ−リ−ド12を途中で切離して残っ
た部分を図4の点線で示すように吊りピン13と一体と
すれば図3の場合より幅の大きい幅広部15が得られ
る。この結果、封止樹脂層との接触面積が増すので排出
効果が図3の例より増大する。Further, in a model in which the pad 14 formed on the semiconductor element to be mounted and the inner lead 12 closest to the hanging pin 13 are not electrically connected, as shown in FIG. -The tab 12 and the hanging pin 13 are combined to form the wide portion 15 having a larger width than in the case of FIG.
Specifically, if the portion left after the inner lead 12 is cut off is integrated with the hanging pin 13 as shown by the dotted line in FIG. 4, a wide portion 15 having a larger width than in the case of FIG. 3 is obtained. . As a result, the contact area with the encapsulating resin layer is increased, and the discharge effect is increased as compared with the example of FIG.
【0021】[0021]
【発明の効果】平面実装型の樹脂封止型半導体装置をマ
ウントするリ−ドフレ−ムは、インナ−リ−ドのライン
スペ−スを十分に採ると広い面積の吊りピンが造れなか
ったので、実装工程におけるリフロ−工程で吸湿水分を
十分に排出できなかった。しかし、本発明に係わる平面
実装型の樹脂封止型半導体装置においては、インナ−リ
−ドの一部を吊りピンと一体として幅広部を形成したの
で、吸湿水分を確実に排出でき、ひいては水分が封止樹
脂内で膨脹して発生するクラックを防止できる。In the lead frame for mounting the resin mounting type semiconductor device of the plane mounting type, the hanging pin having a large area cannot be formed if the line space of the inner lead is sufficiently taken. Moisture absorption could not be sufficiently discharged in the reflow process in the mounting process. However, in the surface-mounting resin-sealed semiconductor device according to the present invention, since the wide portion is formed by integrally forming a part of the inner lead with the hanging pin, it is possible to reliably discharge the absorbed moisture, and thus the moisture is not absorbed. It is possible to prevent cracks caused by expansion in the sealing resin.
【図1】従来のリ−ドフレ−ムの上面図である。FIG. 1 is a top view of a conventional lead frame.
【図2】図1に示したリ−ドフレ−ムにマウントした半
導体素子のパッドとインナ−リ−ド間を金属細線により
接続する状態を示す上面図である。2 is a top view showing a state in which a pad of a semiconductor element mounted on the lead frame shown in FIG. 1 and an inner lead are connected by a thin metal wire.
【図3】本発明に係わる樹脂封止型半導体装置の組立工
程時の上面図である。FIG. 3 is a top view of a resin-sealed semiconductor device according to the present invention during an assembly process.
【図4】本発明に係わる他の実施例の樹脂封止型半導体
装置組立工程時の上面図である。FIG. 4 is a top view of another embodiment of the present invention during a resin-encapsulated semiconductor device assembly process.
1、10:ベッド部、 2、11:インナ−リ−ド、 3、12:金属細線、 4、13:吊りピン、 5、14:パッド、 15:幅広部、 a、b、c:出口。 1, 10: Bed part, 2, 11: Inner lead, 3, 12: Thin metal wire, 4, 13: Hanging pin, 5, 14: Pad, 15: Wide part, a, b, c: Exit.
Claims (2)
ド部と,この周囲に配置するインナ−リ−ドと,前記ベ
ッド部に接続して設ける吊りピンと,この吊りピンとこ
れに最も近い単独のインナ−リ−ドを合体して設ける幅
広部と,前記ベッドにマウントする半導体素子と,この
半導体素子を被覆する封止樹脂層を具備することを特徴
とする樹脂封止型半導体装置1. A bed portion installed in a substantially central portion of a metal plate, an inner lead arranged around the bed portion, a hanging pin provided in connection with the bed portion, the hanging pin and a single piece closest thereto. A resin-encapsulated semiconductor device comprising: a wide portion provided by combining the inner leads of the above; a semiconductor element mounted on the bed; and a sealing resin layer covering the semiconductor element.
記封止樹脂層に露出する前記幅広部からの複数終点と,
この幅広部に形成する最大幅部から前記複数終点を構成
する単独の外部リ−ドとを具備することを特徴とする樹
脂封止型半導体装置2. A wide portion starting from the bed portion, a plurality of end points from the wide portion exposed in the sealing resin layer,
A resin-encapsulated semiconductor device comprising: a single external lead forming the plurality of end points from the maximum width portion formed in the wide portion.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5010332A JPH06224357A (en) | 1993-01-26 | 1993-01-26 | Resin sealed type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5010332A JPH06224357A (en) | 1993-01-26 | 1993-01-26 | Resin sealed type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH06224357A true JPH06224357A (en) | 1994-08-12 |
Family
ID=11747252
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5010332A Withdrawn JPH06224357A (en) | 1993-01-26 | 1993-01-26 | Resin sealed type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH06224357A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7589399B2 (en) | 2005-08-26 | 2009-09-15 | Sharp Kabushiki Kaisha | Semiconductor device, lead frame used in the semiconductor device and electronic equipment using the semiconductor device |
WO2023189650A1 (en) * | 2022-03-31 | 2023-10-05 | ローム株式会社 | Semiconductor device |
-
1993
- 1993-01-26 JP JP5010332A patent/JPH06224357A/en not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7589399B2 (en) | 2005-08-26 | 2009-09-15 | Sharp Kabushiki Kaisha | Semiconductor device, lead frame used in the semiconductor device and electronic equipment using the semiconductor device |
WO2023189650A1 (en) * | 2022-03-31 | 2023-10-05 | ローム株式会社 | Semiconductor device |
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Legal Events
Date | Code | Title | Description |
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A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20000404 |