JPS59158568A - モノリシツク集積回路のダイオ−ド - Google Patents
モノリシツク集積回路のダイオ−ドInfo
- Publication number
- JPS59158568A JPS59158568A JP58030184A JP3018483A JPS59158568A JP S59158568 A JPS59158568 A JP S59158568A JP 58030184 A JP58030184 A JP 58030184A JP 3018483 A JP3018483 A JP 3018483A JP S59158568 A JPS59158568 A JP S59158568A
- Authority
- JP
- Japan
- Prior art keywords
- base
- diode
- layer
- diffusion
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 claims description 23
- 239000002019 doping agent Substances 0.000 description 10
- 238000002955 isolation Methods 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 241001669573 Galeorhinus galeus Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58030184A JPS59158568A (ja) | 1983-02-24 | 1983-02-24 | モノリシツク集積回路のダイオ−ド |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58030184A JPS59158568A (ja) | 1983-02-24 | 1983-02-24 | モノリシツク集積回路のダイオ−ド |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59158568A true JPS59158568A (ja) | 1984-09-08 |
| JPH0330997B2 JPH0330997B2 (enrdf_load_stackoverflow) | 1991-05-01 |
Family
ID=12296667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58030184A Granted JPS59158568A (ja) | 1983-02-24 | 1983-02-24 | モノリシツク集積回路のダイオ−ド |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59158568A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0474478A (ja) * | 1990-07-16 | 1992-03-09 | Matsushita Electron Corp | ダイオード |
-
1983
- 1983-02-24 JP JP58030184A patent/JPS59158568A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0474478A (ja) * | 1990-07-16 | 1992-03-09 | Matsushita Electron Corp | ダイオード |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0330997B2 (enrdf_load_stackoverflow) | 1991-05-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS58111378A (ja) | ツエナ−・ダイオ−ド | |
| US7321138B2 (en) | Planar diac | |
| JPS5967670A (ja) | 半導体装置 | |
| JPS59158568A (ja) | モノリシツク集積回路のダイオ−ド | |
| KR890013764A (ko) | 샌드위치된 산화 실리콘층과 질화실리콘 층을 갖는 프로그램 가능 접속패드 | |
| US7190006B2 (en) | Symmetrical planar diac | |
| JPH0440272Y2 (enrdf_load_stackoverflow) | ||
| JPH0622998Y2 (ja) | 半導体装置 | |
| JPH0440273Y2 (enrdf_load_stackoverflow) | ||
| JPS63219164A (ja) | 半導体集積回路 | |
| JPS63136659A (ja) | 半導体集積回路の製造方法 | |
| JPS60123062A (ja) | 半導体集積回路の製造方法 | |
| JPS5916414B2 (ja) | 半導体装置 | |
| JPH0351103B2 (enrdf_load_stackoverflow) | ||
| JPS60126858A (ja) | 半導体装置 | |
| JPS6154666A (ja) | 半導体装置 | |
| JPS61228676A (ja) | 埋込み型シエナ−ダイオ−ド | |
| JPS5987861A (ja) | 縦形ｐｎｐトランジスタ | |
| JPS6045052A (ja) | 半導体集積回路装置 | |
| JPS59178745A (ja) | 半導体集積回路 | |
| JPH04165666A (ja) | クリップダイオード装置 | |
| JPH0337739B2 (enrdf_load_stackoverflow) | ||
| JPS58127359A (ja) | 半導体接合容量装置 | |
| JPH01290251A (ja) | 静電破壊防止装置 | |
| JPS63144569A (ja) | 半導体装置 |