JPS59155163A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS59155163A
JPS59155163A JP58028820A JP2882083A JPS59155163A JP S59155163 A JPS59155163 A JP S59155163A JP 58028820 A JP58028820 A JP 58028820A JP 2882083 A JP2882083 A JP 2882083A JP S59155163 A JPS59155163 A JP S59155163A
Authority
JP
Japan
Prior art keywords
resistance
ratio
resistor
corners
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58028820A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6352783B2 (enrdf_load_stackoverflow
Inventor
Atsushi Kishi
岸　淳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58028820A priority Critical patent/JPS59155163A/ja
Publication of JPS59155163A publication Critical patent/JPS59155163A/ja
Publication of JPS6352783B2 publication Critical patent/JPS6352783B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP58028820A 1983-02-23 1983-02-23 半導体装置 Granted JPS59155163A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58028820A JPS59155163A (ja) 1983-02-23 1983-02-23 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58028820A JPS59155163A (ja) 1983-02-23 1983-02-23 半導体装置

Publications (2)

Publication Number Publication Date
JPS59155163A true JPS59155163A (ja) 1984-09-04
JPS6352783B2 JPS6352783B2 (enrdf_load_stackoverflow) 1988-10-20

Family

ID=12259033

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58028820A Granted JPS59155163A (ja) 1983-02-23 1983-02-23 半導体装置

Country Status (1)

Country Link
JP (1) JPS59155163A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63142667A (ja) * 1986-12-04 1988-06-15 Nec Corp ＧａＡｓ半導体集積回路

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63142667A (ja) * 1986-12-04 1988-06-15 Nec Corp ＧａＡｓ半導体集積回路

Also Published As

Publication number Publication date
JPS6352783B2 (enrdf_load_stackoverflow) 1988-10-20

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