JPS59152659A - 相補形ｍｏｓ回路素子 - Google Patents

相補形ｍｏｓ回路素子

Info

Publication number
JPS59152659A
JPS59152659A JP58028732A JP2873283A JPS59152659A JP S59152659 A JPS59152659 A JP S59152659A JP 58028732 A JP58028732 A JP 58028732A JP 2873283 A JP2873283 A JP 2873283A JP S59152659 A JPS59152659 A JP S59152659A
Authority
JP
Japan
Prior art keywords
type
transistor
region
voltage
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58028732A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0348665B2 (enrdf_load_stackoverflow
Inventor
Yukio Miyazaki
行雄 宮崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58028732A priority Critical patent/JPS59152659A/ja
Publication of JPS59152659A publication Critical patent/JPS59152659A/ja
Publication of JPH0348665B2 publication Critical patent/JPH0348665B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58028732A 1983-02-21 1983-02-21 相補形ｍｏｓ回路素子 Granted JPS59152659A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58028732A JPS59152659A (ja) 1983-02-21 1983-02-21 相補形ｍｏｓ回路素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58028732A JPS59152659A (ja) 1983-02-21 1983-02-21 相補形ｍｏｓ回路素子

Publications (2)

Publication Number Publication Date
JPS59152659A true JPS59152659A (ja) 1984-08-31
JPH0348665B2 JPH0348665B2 (enrdf_load_stackoverflow) 1991-07-25

Family

ID=12256603

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58028732A Granted JPS59152659A (ja) 1983-02-21 1983-02-21 相補形ｍｏｓ回路素子

Country Status (1)

Country Link
JP (1) JPS59152659A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009099679A (ja) * 2007-10-15 2009-05-07 Mitsumi Electric Co Ltd Ｍｏｓトランジスタ及びこれを用いた半導体集積回路装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009099679A (ja) * 2007-10-15 2009-05-07 Mitsumi Electric Co Ltd Ｍｏｓトランジスタ及びこれを用いた半導体集積回路装置

Also Published As

Publication number Publication date
JPH0348665B2 (enrdf_load_stackoverflow) 1991-07-25

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