JPS591505A - 低摩擦薄膜付き物品 - Google Patents
低摩擦薄膜付き物品Info
- Publication number
- JPS591505A JPS591505A JP57109836A JP10983682A JPS591505A JP S591505 A JPS591505 A JP S591505A JP 57109836 A JP57109836 A JP 57109836A JP 10983682 A JP10983682 A JP 10983682A JP S591505 A JPS591505 A JP S591505A
- Authority
- JP
- Japan
- Prior art keywords
- article
- plasma
- film
- fluorine
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 19
- 239000011737 fluorine Substances 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 150000001875 compounds Chemical class 0.000 claims abstract description 8
- 229920000642 polymer Polymers 0.000 claims abstract description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract 2
- 150000003961 organosilicon compounds Chemical class 0.000 claims abstract 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 13
- 230000000379 polymerizing effect Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 34
- 238000006116 polymerization reaction Methods 0.000 abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 15
- 239000000178 monomer Substances 0.000 abstract description 11
- 239000012159 carrier gas Substances 0.000 abstract description 8
- 230000008859 change Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 abstract description 2
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 abstract description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 3
- 239000008246 gaseous mixture Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 26
- 238000000034 method Methods 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- -1 neutral radicals Chemical class 0.000 description 8
- 229920006254 polymer film Polymers 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000003921 oil Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010924 continuous production Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- 238000002679 ablation Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- NEHMKBQYUWJMIP-UHFFFAOYSA-N chloromethane Chemical compound ClC NEHMKBQYUWJMIP-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- BOMPXIHODLVNMC-UHFFFAOYSA-N difluoro(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](F)(F)C1=CC=CC=C1 BOMPXIHODLVNMC-UHFFFAOYSA-N 0.000 description 2
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- 150000002605 large molecules Chemical class 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000001615 p wave Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- SHXHPUAKLCCLDV-UHFFFAOYSA-N 1,1,1-trifluoropentane-2,4-dione Chemical compound CC(=O)CC(=O)C(F)(F)F SHXHPUAKLCCLDV-UHFFFAOYSA-N 0.000 description 1
- NPNPZTNLOVBDOC-UHFFFAOYSA-N 1,1-difluoroethane Chemical compound CC(F)F NPNPZTNLOVBDOC-UHFFFAOYSA-N 0.000 description 1
- DDMOUSALMHHKOS-UHFFFAOYSA-N 1,2-dichloro-1,1,2,2-tetrafluoroethane Chemical compound FC(F)(Cl)C(F)(F)Cl DDMOUSALMHHKOS-UHFFFAOYSA-N 0.000 description 1
- METVSRFIOHSNJX-UHFFFAOYSA-N 5-(chloromethyl)-4,6,11-trioxa-1-aza-5-silabicyclo[3.3.3]undecane Chemical compound O1CCN2CCO[Si]1(CCl)OCC2 METVSRFIOHSNJX-UHFFFAOYSA-N 0.000 description 1
- 235000007575 Calluna vulgaris Nutrition 0.000 description 1
- VOPWNXZWBYDODV-UHFFFAOYSA-N Chlorodifluoromethane Chemical compound FC(F)Cl VOPWNXZWBYDODV-UHFFFAOYSA-N 0.000 description 1
- PYVHTIWHNXTVPF-UHFFFAOYSA-N F.F.F.F.C=C Chemical compound F.F.F.F.C=C PYVHTIWHNXTVPF-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 108010037781 Silimin Proteins 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000004774 atomic orbital Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- PMSZNCMIJVNSPB-UHFFFAOYSA-N bis(ethenyl)silicon Chemical compound C=C[Si]C=C PMSZNCMIJVNSPB-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- AFYPFACVUDMOHA-UHFFFAOYSA-N chlorotrifluoromethane Chemical compound FC(F)(F)Cl AFYPFACVUDMOHA-UHFFFAOYSA-N 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- XVSBWQYHSLNOCU-UHFFFAOYSA-N ethenyl(dimethyl)silicon Chemical compound C[Si](C)C=C XVSBWQYHSLNOCU-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- GCSJLQSCSDMKTP-UHFFFAOYSA-N ethenyl(trimethyl)silane Chemical compound C[Si](C)(C)C=C GCSJLQSCSDMKTP-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229940050176 methyl chloride Drugs 0.000 description 1
- IQCYANORSDPPDT-UHFFFAOYSA-N methyl(silyl)silane Chemical compound C[SiH2][SiH3] IQCYANORSDPPDT-UHFFFAOYSA-N 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 238000004776 molecular orbital Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- KAVGMUDTWQVPDF-UHFFFAOYSA-N perflubutane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)F KAVGMUDTWQVPDF-UHFFFAOYSA-N 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- QXJQHYBHAIHNGG-UHFFFAOYSA-N trimethylolethane Chemical compound OCC(C)(CO)CO QXJQHYBHAIHNGG-UHFFFAOYSA-N 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
- Laminated Bodies (AREA)
- Polymerisation Methods In General (AREA)
- Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57109836A JPS591505A (ja) | 1982-06-28 | 1982-06-28 | 低摩擦薄膜付き物品 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57109836A JPS591505A (ja) | 1982-06-28 | 1982-06-28 | 低摩擦薄膜付き物品 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS591505A true JPS591505A (ja) | 1984-01-06 |
JPH0553167B2 JPH0553167B2 (enrdf_load_stackoverflow) | 1993-08-09 |
Family
ID=14520432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57109836A Granted JPS591505A (ja) | 1982-06-28 | 1982-06-28 | 低摩擦薄膜付き物品 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS591505A (enrdf_load_stackoverflow) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62106371A (ja) * | 1985-11-01 | 1987-05-16 | Olympus Optical Co Ltd | 分取管の製造方法 |
JPH01315433A (ja) * | 1988-06-15 | 1989-12-20 | Polyplastics Co | 耐候性ポリアセタール樹脂成形品 |
JP2011520762A (ja) * | 2008-05-27 | 2011-07-21 | シュパウント プライベート ソシエテ ア レスポンサビリテ リミテ | ハロゲン化ポリシラン及びこれを製造するためのプラズマ化学処理 |
JP2013529591A (ja) * | 2010-07-02 | 2013-07-22 | シュパウント プライベート ソシエテ ア レスポンサビリテ リミテ | 中鎖長ポリシランおよびそれを製造する方法 |
JP2013533198A (ja) * | 2010-06-30 | 2013-08-22 | シュパウント プライベート ソシエテ ア レスポンサビリテ リミテ | 貯蔵物質及びそれからh−シランを得る方法 |
JP2014185292A (ja) * | 2013-03-25 | 2014-10-02 | 3M Innovative Properties Co | 摩擦係数の低い表面を有するポリマーを含む物品及びその製造方法 |
US9617391B2 (en) | 2008-05-27 | 2017-04-11 | Nagarjuna Fertilizers And Chemicals Limited | Halogenated polysilane and thermal process for producing the same |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0817519A (ja) * | 1994-06-28 | 1996-01-19 | Denkenshiya:Kk | 同軸ケーブル用コネクター |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51127702A (en) * | 1975-04-30 | 1976-11-08 | Nippon Telegr & Teleph Corp <Ntt> | Surface treatment method of magnetic recording materials |
-
1982
- 1982-06-28 JP JP57109836A patent/JPS591505A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51127702A (en) * | 1975-04-30 | 1976-11-08 | Nippon Telegr & Teleph Corp <Ntt> | Surface treatment method of magnetic recording materials |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62106371A (ja) * | 1985-11-01 | 1987-05-16 | Olympus Optical Co Ltd | 分取管の製造方法 |
JPH01315433A (ja) * | 1988-06-15 | 1989-12-20 | Polyplastics Co | 耐候性ポリアセタール樹脂成形品 |
JP2011520762A (ja) * | 2008-05-27 | 2011-07-21 | シュパウント プライベート ソシエテ ア レスポンサビリテ リミテ | ハロゲン化ポリシラン及びこれを製造するためのプラズマ化学処理 |
US9617391B2 (en) | 2008-05-27 | 2017-04-11 | Nagarjuna Fertilizers And Chemicals Limited | Halogenated polysilane and thermal process for producing the same |
US9701795B2 (en) | 2008-05-27 | 2017-07-11 | Nagarjuna Fertilizers And Chemicals Limited. | Halogenated polysilane and plasma-chemical process for producing the same |
JP2013533198A (ja) * | 2010-06-30 | 2013-08-22 | シュパウント プライベート ソシエテ ア レスポンサビリテ リミテ | 貯蔵物質及びそれからh−シランを得る方法 |
JP2013529591A (ja) * | 2010-07-02 | 2013-07-22 | シュパウント プライベート ソシエテ ア レスポンサビリテ リミテ | 中鎖長ポリシランおよびそれを製造する方法 |
JP2014185292A (ja) * | 2013-03-25 | 2014-10-02 | 3M Innovative Properties Co | 摩擦係数の低い表面を有するポリマーを含む物品及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0553167B2 (enrdf_load_stackoverflow) | 1993-08-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4863756A (en) | Method and equipment for coating substrates by means of a plasma discharge using a system of magnets to confine the plasma | |
US5224441A (en) | Apparatus for rapid plasma treatments and method | |
RU2137603C1 (ru) | Способ усиления эффекта отделения от формы | |
EP0176636B1 (en) | Polymeric thin film and products containing the same | |
JP4830733B2 (ja) | ガスバリアフィルムおよびその製造方法 | |
JPH04251736A (ja) | 薄いガスバリヤーフィルム及びその迅速な蒸着方法 | |
JPS591505A (ja) | 低摩擦薄膜付き物品 | |
Kakiuchi et al. | Silicon oxide coatings with very high rates (> 10 nm/s) by hexamethyldisiloxane-oxygen fed atmospheric-pressure VHF plasma: film-forming behavior using cylindrical rotary electrode | |
Hirotsu et al. | Surface modification of some fluorine polymer films by glow discharges | |
JP2003341003A (ja) | 積層体およびその製造方法 | |
JPS5922912A (ja) | 帯電防止膜付き物品の製造方法 | |
JPS62132940A (ja) | 高分子基材へのプラズマ重合薄膜形成方法 | |
KR101763176B1 (ko) | 진공증착된 가스베리어 필름 제조장치 | |
JP4332919B2 (ja) | ガスバリア材の製造方法 | |
JP7173138B2 (ja) | ガスバリアフィルム、及び、ガスバリアフィルムの製造方法 | |
JPH0261499B2 (enrdf_load_stackoverflow) | ||
JPS6038727A (ja) | 磁気記録媒体およびその製造方法 | |
JP4772680B2 (ja) | フッ素及び炭素を専ら含有する非結晶層を付着させるための方法及びこれを実施するための装置 | |
JPS5979425A (ja) | 磁気記録媒体 | |
JPH08290517A (ja) | プラスチックスシートからなる包装材料にガス遮断性に優れた珪素酸化物薄膜を被覆する方法 | |
JPS6113424A (ja) | 磁気記録媒体 | |
Walker et al. | Multilayer barrier films on polyethylene polymerized from CF3H/C2H4 plasmas | |
JPS6164734A (ja) | プラスチツクの帯電防止方法 | |
Kim et al. | Oxygen plasma treatment of SiOxCy (− H) films polymerized by atmospheric pressure dielectric barrier discharge using hexamethylcyclrotrisiloxane | |
JPH11302422A (ja) | ガスバリア材およびその製造方法および包装体 |