JPS59147456A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59147456A
JPS59147456A JP58020663A JP2066383A JPS59147456A JP S59147456 A JPS59147456 A JP S59147456A JP 58020663 A JP58020663 A JP 58020663A JP 2066383 A JP2066383 A JP 2066383A JP S59147456 A JPS59147456 A JP S59147456A
Authority
JP
Japan
Prior art keywords
film
polycrystalline silicon
films
region
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58020663A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0245329B2 (enrdf_load_stackoverflow
Inventor
Akihiro Kanda
神田　彰弘
Hideaki Sadamatsu
定松　英明
Akira Matsuzawa
松沢　昭
Michihiro Inoue
道弘 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58020663A priority Critical patent/JPS59147456A/ja
Priority to US06/578,036 priority patent/US4536950A/en
Publication of JPS59147456A publication Critical patent/JPS59147456A/ja
Publication of JPH0245329B2 publication Critical patent/JPH0245329B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Bipolar Transistors (AREA)
JP58020663A 1983-02-10 1983-02-10 半導体装置の製造方法 Granted JPS59147456A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58020663A JPS59147456A (ja) 1983-02-10 1983-02-10 半導体装置の製造方法
US06/578,036 US4536950A (en) 1983-02-10 1984-02-08 Method for making semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58020663A JPS59147456A (ja) 1983-02-10 1983-02-10 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59147456A true JPS59147456A (ja) 1984-08-23
JPH0245329B2 JPH0245329B2 (enrdf_load_stackoverflow) 1990-10-09

Family

ID=12033439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58020663A Granted JPS59147456A (ja) 1983-02-10 1983-02-10 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59147456A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0518602A (ja) * 1991-07-08 1993-01-26 Hanshin Electric Co Ltd 遠隔操作型自動給湯システム

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0518602A (ja) * 1991-07-08 1993-01-26 Hanshin Electric Co Ltd 遠隔操作型自動給湯システム

Also Published As

Publication number Publication date
JPH0245329B2 (enrdf_load_stackoverflow) 1990-10-09

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